Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.38 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.38 |
| ▸ | TSHR | P16473 | 1/20 | 0.32 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL30400900 | 0.88 | ALDH1A1 (0.41) | ALDH1A1L3MBTL1TSHRTDP1 | |
| SCHEMBL12441736 | 0.78 | ALDH1A1 (0.35) | ALDH1A1L3MBTL1 | |
| SCHEMBL12225361 | 0.78 | ALDH1A1 (0.35) | ALDH1A1L3MBTL1 | |
| SCHEMBL2618543 | 0.78 | ALDH1A1 (0.35) | ALDH1A1L3MBTL1 | |
| Sulfuric Acid SCHEMBL14656583 | 0.78 | CA5A (0.43) | ALDH1A1L3MBTL1TSHRTDP1 | |
| SCHEMBL4132483 | 0.75 | CA1 (0.32) | — | |
| SCHEMBL28620962 | 0.74 | ALDH1A1 (0.36) | ALDH1A1L3MBTL1TSHRTDP1 | |
| SCHEMBL428997 | 0.73 | — | — | |
| SCHEMBL501638 | 0.73 | — | — | |
| SCHEMBL28300999 | 0.73 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10295906-B2 | Conductive polymer composition, coated article, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-05-21 | — | — | US | disclosed |
| US-9897917-B2 | Conductive polymer composition, coated article, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-20 | — | — | US | disclosed |
| EP-3203319-A1 | POLYMER COMPOUND, NEGATIVE RESIST COMPOSITION, LAMINATE, PATTERNING PROCESS, AND COMPOUND | Shin-Etsu Chemical Co., Ltd. (JP) | 2017-08-09 | — | — | EP | disclosed |
| US-20170210836-A1 | POLYMER COMPOUND, NEGATIVE RESIST COMPOSITION, LAMINATE, PATTERNING PROCESS, AND COMPOUND | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-07-27 | — | — | US | disclosed |
| US-20170090286-A1 | CONDUCTIVE POLYMER COMPOSITION, COATED ARTICLE, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-03-30 | — | — | US | disclosed |
| US-20170059990-A1 | RADIATION-SENSITIVE OR ACTINIC RAY-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, MASK BLANK, RESIST PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-03-02 | — | — | US | disclosed |
| CN-105404096-A | CHEMICALLY AMPLIFIED POSITIVE RESIST DRY FILM, DRY FILM LAMINATE AND METHOD OF PREPARING LAMINATE | SHINETSU CHEMICAL CO | 2016-03-16 | — | — | CN | disclosed |
| CN-105301905-A | Chemically amplified positive resist composition and patterning process | SHINETSU CHEMICAL CO | 2016-02-03 | — | — | CN | disclosed |
| US-20120082939-A1 | ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE RESIN COMPOSITION, AND ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-04-05 | — | — | US | disclosed |
| US-20120034559-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM THEREFROM AND METHOD OF FORMING PATTERN THEREWITH | FUJIFILM CORPORATION (JP) | 2012-02-09 | — | — | US | disclosed |
| US-20120003583-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-01-05 | — | — | US | disclosed |
| US-20110318693-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-12-29 | — | — | US | disclosed |
| US-20110183263-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-07-28 | — | — | US | disclosed |
| US-7618765-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-11-17 | — | — | US | disclosed |
| US-7618764-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-11-17 | — | — | US | disclosed |
| US-7541133-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-06-02 | — | — | US | disclosed |
| US-20080268370-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-10-30 | — | — | US | disclosed |
| US-20080254386-A1 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-10-16 | — | — | US | disclosed |
| US-20080124652-A1 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-29 | — | — | US | disclosed |
| CN-1653641-A | Nonaqueous electrolyte and lithium secondary battery using the same | MITSUBISHI CHEM CORP (JP) | 2005-08-10 | — | — | CN | disclosed |