SCHEMBL501638

SCHEMBL501638

O=S(=O)(O)C(F)(F)CO

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL544030 0.97 ALDH1A1 (0.38)
SCHEMBL244283 0.83 NPSR1 (0.32)
SCHEMBL30400900 0.78 ALDH1A1 (0.41)
SCHEMBL2759440 0.77 ALDH1A1 (0.36)
SCHEMBL428997 0.75
SCHEMBL28300999 0.75
Ethylene Glycol SCHEMBL29006644 0.75 ALDH1A1 (0.35)
Trifluoroethanol SCHEMBL28432116 0.73 CA5A (0.43)
SCHEMBL3867580 0.73 ALDH1A1 (0.38)
SCHEMBL6207756 0.73 ALDH1A1 (0.38)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 261 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8748672-B2 2-(alkylcarbonyloxy)-1, 1-difluoroethanesulfonic acid salt and method for producing the same CENTRAL GLASS COMPANY, LIMITED (JP) 2014-06-10 US claimed
US-8663897-B2 Fluorine-containing sulfonates having polymerizable anions and manufacturing method therefor, fluorine-containing resins, resist compositions, and pattern-forming method using same CENTRAL GLASS COMPANY, LIMITED (JP) 2014-03-04 US claimed
US-20130317250-A1 2-(Alkylcarbonyloxy)-1, 1-Difluoroethanesulfonic Acid Salt and Method for Producing the Same CENTRAL GLASS COMPANY, LIMITED (JP) 2013-11-28 US claimed
US-8110711-B2 Processes for production of 2-bromo-2,2-difluoroethanol and 2-(alkylcarbonyloxy)-1,1-difluoroethanesulfonic acid salt CENTRAL GLASS COMPANY, LIMITED (JP) 2012-02-07 US claimed
US-20110177453-A1 Fluorine-Containing Sulfonates Having Polymerizable Anions and Manufacturing Method Therefor, Fluorine-Containing Resins, Resist Compositions, and Pattern-Forming Method Using Same CENTRAL GLASS COMPANY, LIMITED (JP) 2011-07-21 US claimed
US-20110034721-A1 2-(Alkylcarbonyloxy)-1, 1-Difluoroethanesulfonic Acid Salt and Method for Producing the Same CENTRAL GLASS COMPANY, LIMITED (JP) 2011-02-10 US claimed
US-20110015431-A1 Processes for Production of 2-Bromo-2,2-Difluoroethanol and 2-(Alkylcarbonyloxy)-1,1-Difluoroethanesulfonic Acid Salt CENTRAL GLASS COMPANY, LIMITED (JP) 2011-01-20 US claimed
EP-4451061-A1 NOVEL PHOTOACID GENERATOR, PHOTORESIST COMPOSITION, AND PHOTORESIST PATTERN FORMATION METHOD Dongjin Semichem Co., Ltd. (KR) 2024-10-23 EP disclosed
US-20240337929-A1 PHOTOACID GENERATOR, PHOTORESIST COMPOSITION AND METHOD FOR FORMING PHOTORESIST PATTERN USING THE SAME DONGJIN SEMICHEM CO., LTD. (KR) 2024-10-10 US disclosed
US-20240291009-A1 METHOD FOR PURIFYING TREATMENT TARGET SOLUTION AGC Inc. (JP) 2024-08-29 US disclosed
EP-4417582-A1 METHOD FOR PURIFYING TREATMENT TARGET SOLUTION AGC Inc. (JP) 2024-08-21 EP disclosed
CN-118176168-A Method for purifying liquid to be treated AGC株式会社 2024-06-11 CN disclosed
WO-2024070091-A1 ONIUM SALT, PHOTOACID GENERATOR, POLYMER, RESIST COMPOSITION, AND METHOD FOR MANUFACTURING DEVICE USING SAID RESIST COMPOSITION 東洋合成工業株式会社 2024-04-04 WO disclosed
US-20090186297-A1 POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-07-23 US disclosed
US-20090186297-A1 POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-07-23 US disclosed
US-20090186298-A1 POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-07-23 US disclosed
US-20090186298-A1 POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-07-23 US disclosed
EP-2081083-A1 Positive resist compositions and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2009-07-22 EP disclosed
EP-2081084-A1 Positive resist compositions and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2009-07-22 EP disclosed
US-20090042128-A1 Positive resist composition used for semiconductor microfabrication employing a lithography process contains an acid generator comprising a compound generating an acid by irradiation and a monomer having a bulky and acid-labile group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-02-12 US disclosed