SCHEMBL3870709

SCHEMBL3870709

CC(C)(C)OC(=O)Oc1ccc([S+]2CCCC2)c2ccccc12

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ELANE P08246 1/20 0.36
BRD4 O60885 2/20 0.36
TSHR P16473 2/20 0.33
NPC1 O15118 2/20 0.33
RAB9A P51151 2/20 0.33
NPSR1 Q6W5P4 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
PKM P14618 1/20 0.33
GAA P10253 2/20 0.33
ALDH1A1 P00352 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
CHRM2 P08172 1/20 0.32
CHRM4 P08173 1/20 0.32
CHRM1 P11229 1/20 0.32
CHRM3 P20309 1/20 0.32
AAK1 Q2M2I8 1/20 0.32
LMNA P02545 2/20 0.32
L3MBTL1 Q9Y468 1/20 0.32
KDM1A O60341 1/20 0.31
MEN1 O00255 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL647892 0.90 BRD4 (0.32) ELANEBRD4
SCHEMBL3870181 0.85 HSD17B10 (0.42) TSHRNPC1RAB9ANPSR1TDP1
SCHEMBL3158517 0.85
SCHEMBL3161098 0.84
Trifluoromethanesulfonic Acid SCHEMBL6564876 0.83 GAA (0.32) ELANEGAAALDH1A1SMN1; SMN2MEN1
SCHEMBL3871523 0.82 TSHR (0.33) TSHRNPC1RAB9ANPSR1TDP1
SCHEMBL3872104 0.82 TYMS (0.45) TSHRNPSR1TDP1GAAALDH1A1
SCHEMBL12376734 0.80 ELANE (0.39) ELANETSHRNPC1RAB9ANPSR1
SCHEMBL3872145 0.80 ALDH1A1 (0.37) ELANETSHRGAAALDH1A1SMN1; SMN2
SCHEMBL2742095 0.79 KDM4E (0.30) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7638261-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-12-29 US disclosed
US-20090148790-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2009-06-11 US disclosed
US-7521169-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-04-21 US disclosed
EP-1386904-B1 Acenaphthylene derivative, polymer, and antireflection film-forming composition JSR CORP (JP) 2008-09-17 EP disclosed
US-20080187859-A1 Radiation-Sensitive Resin Composition JSR CORPORATION (JP) 2008-08-07 US disclosed
US-20070269735-A1 Radiation-Sensitive Resin Composition JSR CORPORATION (JP) 2007-11-22 US disclosed
US-7297461-B2 Radiation sensitive resin composition JSR CORPORATION (JP) 2007-11-20 US disclosed
US-7288359-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2007-10-30 US disclosed
EP-1736829-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2006-12-27 EP disclosed
EP-1726608-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2006-11-29 EP disclosed
US-20060234153-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-10-19 US disclosed
US-7108955-B2 Polysiloxane, process for production thereof and radiation-sensitive resin composition JSR CORPORATION (JP) 2006-09-19 US disclosed
US-20050171226-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2005-08-04 US disclosed
EP-1557718-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-07-27 EP disclosed
US-20040143082-A1 Polysiloxane, process for production thereof and radiation-sensitive resin composition JSR CORPORATION (JP) 2004-07-22 US disclosed
EP-1398339-A1 POLYSILOXANE, PROCESS FOR PRODUCTION THEREOF AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2004-03-17 EP disclosed
US-20030219680-A1 Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams JSR CORPORATION (JP) 2003-11-27 US disclosed
US-20030170561-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-09-11 US disclosed