SCHEMBL3871127

SCHEMBL3871127

CCCC(F)(F)S(=O)(=O)O

nearest known ligand 0.35

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
LPAR1 Q92633 1/20 0.35
LPAR3 Q9UBY5 1/20 0.35
ALDH1A1 P00352 1/20 0.35
L3MBTL1 Q9Y468 1/20 0.35
EPHX1 P07099 2/20 0.34
FDPS P14324 2/20 0.32
CES1 P23141 5/20 0.31
FAAH O00519 4/20 0.31
CES2 O00748 3/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Ammonia Solution, Strong SCHEMBL18008280 0.97 LPAR1 (0.34) LPAR1LPAR3ALDH1A1L3MBTL1EPHX1
Dimethylamine SCHEMBL18008050 0.93 EPHX1 (0.35) LPAR1LPAR3ALDH1A1L3MBTL1EPHX1
SCHEMBL18007903 0.85 EPHX1 (0.41) LPAR1LPAR3EPHX1CES1FAAH
Allylamine SCHEMBL18008491 0.84 ALDH1A1 (0.33) ALDH1A1FDPS
SCHEMBL18008458 0.83 CES2 (0.45) LPAR1LPAR3EPHX1CES1FAAH
Ammonia Solution, Strong SCHEMBL18008792 0.83 EPHX1 (0.39) LPAR1LPAR3EPHX1CES1FAAH
SCHEMBL18008469 0.81 CES2 (0.48) LPAR1LPAR3EPHX1CES1FAAH
SCHEMBL679295 0.81 CES2 (0.48) LPAR1LPAR3EPHX1CES1FAAH
SCHEMBL3871219 0.81 CES2 (0.48) LPAR1LPAR3EPHX1CES1FAAH
SCHEMBL17773374 0.81 CES2 (0.48) LPAR1LPAR3EPHX1CES1FAAH

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230384679-A1 PHOTORESIST UNDER-LAYER AND METHOD OF FORMING PHOTORESIST PATTERN TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-11-30 US disclosed
CN-113252759-A Electrochemical gas sensor and electrolyte for electrochemical gas sensor 德尔格安全股份两合公司 2021-08-13 CN disclosed
US-20200326299-A1 ELECTROCHEMICAL GAS SENSOR AND ELECTROLYTE FOR AN ELECTROCHEMICAL GAS SENSOR Dräger Safety AG & Co. KGaA (DE) 2020-10-15 US disclosed
US-10732144-B2 Electrochemical gas sensor and electrolyte for an electrochemical gas sensor Dräger Safety AG & Co. KGaA (DE) 2020-08-04 US disclosed
EP-3367088-A1 ELECTROCHEMICAL GAS SENSOR AND ELECTROLYTE FOR AN ELECTROCHEMICAL GAS SENSOR Dräger Safety AG & Co. KGaA (DE) 2018-08-29 EP disclosed
US-20180031516-A1 ELECTROCHEMICAL GAS SENSOR AND ELECTROLYTE FOR AN ELECTROCHEMICAL GAS SENSOR Dräger Safety AG & Co. KGaA (DE) 2018-02-01 US disclosed
EP-3259583-A1 ELECTROCHEMICAL GAS SENSOR AND ELECTROLYTE FOR AN ELECTROCHEMICAL GAS SENSOR Dräger Safety AG & Co. KGaA (DE) 2017-12-27 EP disclosed
WO-2016131549-A1 ELECTROCHEMICAL GAS SENSOR AND ELECTROLYTE FOR AN ELECTROCHEMICAL GAS SENSOR Dräger Safety AG & Co. KGaA (DE) 2016-08-25 WO disclosed
US-9250531-B2 Method of forming resist pattern and negative tone-development resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2016-02-02 US disclosed
US-8993211-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the same FUJIFILM CORPORATION (JP) 2015-03-31 US disclosed
US-20060234153-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-10-19 US disclosed
US-7108955-B2 Polysiloxane, process for production thereof and radiation-sensitive resin composition JSR CORPORATION (JP) 2006-09-19 US disclosed
US-20060141383-A1 Sulfonium salts, radiation- sensitive acid generators, and positive radiator-sensitive resin compositions JSR CORPORATION (JP) 2006-06-29 US disclosed
EP-1586570-A1 SULFONIUM SALTS, RADIATION-SENSITIVE ACID GENERATORS, AND POSITIVE RADIATION-SENSITIVE RESIN COMPOSITIONS JSR Corporation (JP) 2005-10-19 EP disclosed
US-20050171226-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2005-08-04 US disclosed
EP-1557718-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-07-27 EP disclosed
US-20040143082-A1 Polysiloxane, process for production thereof and radiation-sensitive resin composition JSR CORPORATION (JP) 2004-07-22 US disclosed
EP-1398339-A1 POLYSILOXANE, PROCESS FOR PRODUCTION THEREOF AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2004-03-17 EP disclosed
US-20030219680-A1 Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams JSR CORPORATION (JP) 2003-11-27 US disclosed
US-20030170561-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-09-11 US disclosed