Tetramethylammonium Ion

Tetramethylammonium Ion

SCHEMBL3909243

C[N+](C)(C)C.C[N+](C)(C)C.O.O=S(=O)([O-])[O-]

nearest known ligand 0.36

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

dacAdacBdacCftsImrcAmrcBmrdA

The experimentally established mechanism targets of Tetramethylammonium Ion. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
BBOX1 O75936 3/20 0.36
CHRNB2 P17787 1/20 0.36
CHRNA7 P36544 1/20 0.36
CHRNA4 P43681 1/20 0.36
MEN1 O00255 1/20 0.33
ALDH1A1 P00352 1/20 0.33
TSHR P16473 1/20 0.33
KMT2A Q03164 1/20 0.33
TP53 P04637 1/20 0.32
KDM4E B2RXH2 1/20 0.31
CYP3A4 P08684 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Tetramethylammonium Ion SCHEMBL16714019 0.96 BBOX1 (0.35) BBOX1CHRNB2CHRNA7CHRNA4MEN1
Tetramethylammonium Ion SCHEMBL36961 0.95 CHRNB2 (0.40) BBOX1CHRNB2CHRNA7CHRNA4MEN1
Tetramethylammonium Ion SCHEMBL1271620 0.91 BBOX1 (0.36) BBOX1CHRNB2CHRNA7CHRNA4MEN1
Tetramethylammonium Ion SCHEMBL9332259 0.91 BBOX1 (0.36) BBOX1CHRNB2CHRNA7CHRNA4MEN1
Tetramethylammonium Ion SCHEMBL8460212 0.91 BBOX1 (0.36) BBOX1CHRNB2CHRNA7CHRNA4MEN1
Tetramethylammonium Ion SCHEMBL8460505 0.91 BBOX1 (0.36) BBOX1CHRNB2CHRNA7CHRNA4MEN1
Tetramethylammonium Ion SCHEMBL8461570 0.91 BBOX1 (0.36) BBOX1CHRNB2CHRNA7CHRNA4MEN1
Tetramethylammonium Ion SCHEMBL8460504 0.91 BBOX1 (0.36) BBOX1CHRNB2CHRNA7CHRNA4MEN1
Tetramethylammonium Ion SCHEMBL8460511 0.91 BBOX1 (0.36) BBOX1CHRNB2CHRNA7CHRNA4MEN1
Tetramethylammonium Ion SCHEMBL7635178 0.91 BBOX1 (0.36) BBOX1CHRNB2CHRNA7CHRNA4MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7497966-B2 Chemical mechanical polishing slurry composition for shallow trench isolation process of semiconductor HANWHA CHEMICAL CORPORATION (KR) 2009-03-03 US claimed
WO-2008023858-A1 MANUFACTURING METHODS OF FINE CERIUM OXIDE PARTICLES AND ITS SLURRY FOR SHALLOW TRENCH ISOLATION PROCESS OF SEMICONDUCTOR HANWHA CHEMICAL CORPORATION (KR) 2008-02-28 WO claimed
US-20070220813-A1 Chemical Mechanical Polishing Slurry Composition for Shallow Trench Isolation Process of Semiconductor HANWHA CHEMICAL CORPORATION (KR) 2007-09-27 US claimed
WO-2006004258-A1 CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION FOR SHALLOW TRENCH ISOLATION PROCESS OF SEMICONDUCTOR HANWHA CHEMICAL CORPORATION (KR) 2006-01-12 WO claimed
US-20220018826-A1 COLORIMETRIC PLASMONIC NANOSENSOR FOR DOSIMETRY OF THERAPEUTIC LEVELS OF IONIZING RADIATION ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY (US) 2022-01-20 US disclosed
US-10428160-B2 Colorimetric hydrogel based nanosensor for detection of therapeutic levels of ionizing radiation ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY (US) 2019-10-01 US disclosed
US-20180066074-A1 Colorimetric Hydrogel Based Nanosensor for Detection of Therapeutic Levels of Ionizing Radiation BANNER HEALTH - AN ARIZONA NONPROFIT CORPORATION 2018-03-08 US disclosed
US-20170212037-A1 COLORIMETRIC PLASMONIC NANOSENSOR FOR DOSIMETRY OF THERAPEUTIC LEVELS OF IONIZING RADIATION BANNER HEALTH, AN ARIZONA NONPROFIT CORPORATION 2017-07-27 US disclosed
US-7497966-B2 Chemical mechanical polishing slurry composition for shallow trench isolation process of semiconductor HANWHA CHEMICAL CORPORATION (KR) 2009-03-03 US disclosed
WO-2008023858-A1 MANUFACTURING METHODS OF FINE CERIUM OXIDE PARTICLES AND ITS SLURRY FOR SHALLOW TRENCH ISOLATION PROCESS OF SEMICONDUCTOR HANWHA CHEMICAL CORPORATION (KR) 2008-02-28 WO disclosed
US-20070220813-A1 Chemical Mechanical Polishing Slurry Composition for Shallow Trench Isolation Process of Semiconductor HANWHA CHEMICAL CORPORATION (KR) 2007-09-27 US disclosed
WO-2006004258-A1 CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION FOR SHALLOW TRENCH ISOLATION PROCESS OF SEMICONDUCTOR HANWHA CHEMICAL CORPORATION (KR) 2006-01-12 WO disclosed