Known targets — ChEMBL curated mechanism
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
The experimentally established mechanism targets of Phosphoric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 7)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP3A4 | P08684 | 2/20 | 0.61 |
| ▸ | LPAR3 | Q9UBY5 | 8/20 | 0.58 |
| ▸ | LPAR2 | Q9HBW0 | 6/20 | 0.58 |
| ▸ | LPAR1 | Q92633 | 3/20 | 0.58 |
| ▸ | TSHR | P16473 | 1/20 | 0.46 |
| ▸ | P2RY10 | O00398 | 4/20 | 0.42 |
| ▸ | GPR34 | Q9UPC5 | 2/20 | 0.42 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29177519 | 0.97 | CYP3A4 (0.64) | CYP3A4LPAR3LPAR2LPAR1TSHR | |
| SCHEMBL15389152 | 0.97 | CYP3A4 (0.64) | CYP3A4LPAR3LPAR2LPAR1TSHR | |
| SCHEMBL26559 | 0.97 | CYP3A4 (0.64) | CYP3A4LPAR3LPAR2LPAR1TSHR | |
| SCHEMBL1498124 | 0.95 | CYP3A4 (0.61) | CYP3A4LPAR3LPAR2LPAR1TSHR | |
| SCHEMBL673594 | 0.95 | CYP3A4 (0.61) | CYP3A4LPAR3LPAR2LPAR1TSHR | |
| SCHEMBL12914744 | 0.95 | CYP3A4 (0.61) | CYP3A4LPAR3LPAR2LPAR1TSHR | |
| SCHEMBL9584742 | 0.95 | CYP3A4 (0.61) | CYP3A4LPAR3LPAR2LPAR1TSHR | |
| SCHEMBL6684785 | 0.95 | CYP3A4 (0.61) | CYP3A4LPAR3LPAR2LPAR1TSHR | |
| SCHEMBL9854018 | 0.95 | CYP3A4 (0.61) | CYP3A4LPAR3LPAR2LPAR1TSHR | |
| SCHEMBL15232926 | 0.95 | CYP3A4 (0.61) | CYP3A4LPAR3LPAR2LPAR1TSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| US-11480877-B2 | Resist composition, method for forming resist pattern, and polyphenol compound used therein | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-10-25 | — | — | US | disclosed |
| US-20220064137-A1 | COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD, CIRCUIT PATTERN FORMATION METHOD, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-03-03 | — | — | US | disclosed |
| US-11256170-B2 | Compound, resist composition, and method for forming resist pattern using it | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-22 | — | — | US | disclosed |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| CN-110914327-A | Color-stable curing compositions comprising polyisocyanates of (cyclo) aliphatic diisocyanates | 巴斯夫欧洲公司 | 2020-03-24 | — | — | CN | disclosed |
| US-7494762-B2 | Positive resist composition for immersion lithography and method for forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-24 | — | — | US | disclosed |
| CN-100453620-C | Flame retardant phosphonate additives for thermoplastic materials | RHODIA (US) | 2009-01-21 | — | — | CN | disclosed |
| EP-1115170-B1 | NON-AQUEOUS LIQUID ELECTROLYTE SECONDARY CELL AND METHOD FOR MANUFACTURING THE SAME | PANASONIC CORP (JP) | 2008-12-03 | — | — | EP | disclosed |
| US-20080090171-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-04-17 | — | — | US | disclosed |
| CN-1833015-A | Flame retardant phosphonate additives for thermoplastics | RHODIA (US) | 2006-09-13 | — | — | CN | disclosed |
| EP-1115170-A1 | NON-AQUEOUS LIQUID ELECTROLYTE SECONDARY CELL AND METHOD FOR MANUFACTURING THE SAME | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2001-07-11 | — | — | EP | disclosed |
| US-4895900-A | ACRYLIC RESIN, PHOSPHOROUS ACID, EPOXY COMPOUND | KANSAI PAINT COMPANY, LIMITED (JP) | 1990-01-23 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11480877-B2 | Resist composition, method for forming resist pattern, and polyphenol compound used therein | SLC11A2, ABCC1, FBL | CYP3A4 1997/4885LPAR3 2251/4885LPAR2 2476/4885 |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | CYP3A4 3096/4885LPAR3 1612/4885LPAR2 2337/4885 |
| US-11256170-B2 | Compound, resist composition, and method for forming resist pattern using it | RDX, SLC11A2, FBL | CYP3A4 2133/4885LPAR3 3441/4885LPAR2 3950/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | CYP3A4 1754/4885LPAR3 348/4885LPAR2 432/4885 |
| US-20220064137-A1 | COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD, CIRCUIT PATTERN FORMATION METHOD, AND PURIFICATION METHOD | BCR, RER1, ASIC1 | CYP3A4 1990/4885LPAR3 2679/4885LPAR2 2268/4885 |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | CYP3A4 1754/4885LPAR3 348/4885LPAR2 432/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.