SCHEMBL3948635

SCHEMBL3948635

Cc1ccc(S(=O)(=O)Oc2cccc(C3(c4cccc(OS(=O)(=O)c5ccc(C)cc5)c4F)c4ccccc4-c4ccccc43)c2F)cc1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 7/20 0.47
MEN1 O00255 5/20 0.47
GAA P10253 2/20 0.47
ESR1 P03372 1/20 0.47
ESR2 Q92731 1/20 0.47
LMNA P02545 3/20 0.45
MAPK1 P28482 2/20 0.45
VDR P11473 1/20 0.45
ALDH1A1 P00352 4/20 0.41
MAPT P10636 4/20 0.41
HTR6 P50406 1/20 0.41
DHODH Q02127 1/20 0.41
KDM4E B2RXH2 2/20 0.40
HPGD P15428 2/20 0.40
KEAP1 Q14145 1/20 0.39
NFE2L2 Q16236 1/20 0.39
HTT P42858 2/20 0.39
HSD11B1 P28845 1/20 0.36
HSD17B3 P37058 1/20 0.36
POLB P06746 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3842443 0.88 LMNA (0.50) KMT2AMEN1GAAESR1ESR2
SCHEMBL3839070 0.82 VDR (0.42) KMT2AMEN1GAAESR1ESR2
SCHEMBL3839074 0.79 ESR1 (0.40) KMT2AMEN1GAAESR1ESR2
SCHEMBL3843311 0.79 VDR (0.43) KMT2AMEN1GAAESR1ESR2
SCHEMBL4138938 0.78 KMT2A (0.56) KMT2AMEN1GAAESR1ESR2
SCHEMBL3842322 0.77 LMNA (0.43) KMT2AMEN1GAAESR1ESR2
SCHEMBL3839005 0.77 VDR (0.39) KMT2AMEN1GAAESR1ESR2
SCHEMBL3839008 0.76 KEAP1 (0.41) KMT2AMEN1GAAESR1ESR2
SCHEMBL3843314 0.76 ESR1 (0.48) KMT2AMEN1GAAESR1ESR2
SCHEMBL3842446 0.75 VDR (0.48) KMT2AMEN1LMNAVDRALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7556860-B2 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2009-07-07 US disclosed
US-20060216531-A1 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2006-09-28 US disclosed
US-20060210812-A1 Insulating film and method of forming the same JSR CORPORATION (JP) 2006-09-21 US disclosed
EP-1696478-A1 INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-08-30 EP disclosed
EP-1679184-A1 LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-07-12 EP disclosed