SCHEMBL3951265

SCHEMBL3951265

C=C(CC1CCO1)C(=O)OCCCC

nearest known ligand 0.42

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.42
EPHX1 P07099 1/20 0.39
ALDH1A1 P00352 3/20 0.38
SMN1; SMN2 Q16637 3/20 0.38
LMNA P02545 1/20 0.38
POLB P06746 1/20 0.38
HPGD P15428 1/20 0.38
L3MBTL1 Q9Y468 1/20 0.37
ATM Q13315 1/20 0.36
RAB9A P51151 2/20 0.35
HSD17B10 Q99714 1/20 0.35
MIF P14174 2/20 0.33
NPC1 O15118 1/20 0.33
MAPT P10636 1/20 0.33
PDK1 Q15118 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3953469 0.91 ALDH1A1 (0.37) TSHREPHX1ALDH1A1SMN1; SMN2LMNA
SCHEMBL27764502 0.89 TSHR (0.45) TSHRALDH1A1SMN1; SMN2LMNAPOLB
SCHEMBL1685769 0.88 TSHR (0.45) TSHRALDH1A1SMN1; SMN2LMNAPOLB
SCHEMBL17627798 0.84 ALDH1A1 (0.39) TSHRALDH1A1LMNAPOLBHPGD
SCHEMBL28274192 0.83 TSHR (0.51) TSHREPHX1ALDH1A1SMN1; SMN2
SCHEMBL866089 0.82 TSHR (0.54) TSHREPHX1ALDH1A1SMN1; SMN2
Acrylic Acid SCHEMBL29028962 0.80 TSHR (0.44) TSHRALDH1A1SMN1; SMN2LMNAPOLB
SCHEMBL27802367 0.78 LMNA (0.42) ALDH1A1SMN1; SMN2LMNAPOLBHPGD
SCHEMBL3951769 0.78 TSHR (0.45) TSHREPHX1ALDH1A1SMN1; SMN2LMNA
SCHEMBL9562354 0.78 ALDH1A1 (0.46) TSHRALDH1A1SMN1; SMN2MIF

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7488569-B2 Negative resist composition, a method for forming a resist pattern thereof, and a method for fabricating a semiconductor device FUJITSU LIMITED (JP) 2009-02-10 US disclosed
US-20060263723-A1 Negative resist composition, a method for forming a resist pattern thereof, and a method for fabricating a semiconductor device FUJITSU LIMITED (JP) 2006-11-23 US disclosed
US-7122288-B2 Negative resist composition, a method for forming a resist pattern thereof, and a method for fabricating a semiconductor device FUJITSU LIMITED (JP) 2006-10-17 US disclosed
US-20020177070-A1 Negative resist composition, a method for forming a resist pattern thereof, and a method for fabricating a semiconductor device FUJITSU LIMITED (JP) 2002-11-28 US disclosed