SCHEMBL395841

SCHEMBL395841

CCC[S+](C)Cc1ccccc1

nearest known ligand 0.46

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.44
SLC6A2 P23975 1/20 0.37
TAAR1 Q96RJ0 1/20 0.37
CALM1 P0DP23 1/20 0.36
TSHR P16473 4/20 0.34
ALDH1A1 P00352 3/20 0.34
SIGMAR1 Q99720 2/20 0.34
SMN1; SMN2 Q16637 1/20 0.34
KDM4E B2RXH2 2/20 0.33
IDO1 P14902 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
LOXL2 Q9Y4K0 1/20 0.33
TRPA1 O75762 1/20 0.33
CYP3A4 P08684 1/20 0.33
MAPT P10636 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Hydrochloric Acid SCHEMBL394410 0.98 TP53 (0.42) TP53SLC6A2TAAR1CALM1TSHR
SCHEMBL2603135 0.83 TP53 (0.48) TP53SLC6A2TAAR1CALM1TSHR
Hydrochloric Acid SCHEMBL395850 0.82 MEN1 (0.46) TP53SIGMAR1SMN1; SMN2
Bromide SCHEMBL1047242 0.82 DNM1 (0.46) TP53SIGMAR1SMN1; SMN2
Water SCHEMBL9244223 0.82 DNM1 (0.43) TP53SIGMAR1SMN1; SMN2
Hydrochloric Acid SCHEMBL9347559 0.82 MEN1 (0.46) TP53SIGMAR1SMN1; SMN2
Iodide SCHEMBL1046043 0.82 DNM1 (0.43) TP53SIGMAR1SMN1; SMN2
Hydrochloric Acid SCHEMBL392156 0.82 MEN1 (0.46) TP53SIGMAR1SMN1; SMN2
Hydrochloric Acid SCHEMBL30275005 0.82 MEN1 (0.46) TP53SIGMAR1SMN1; SMN2
Bromide SCHEMBL395786 0.82 DNM1 (0.46) TP53SIGMAR1SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8173584-B2 Composition and method for treating semiconductor substrate surface LASERWORT LTD (HK) 2012-05-08 US claimed
US-20120083436-A1 COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE SURFACE LASERWORT LTD (HK) 2012-04-05 US claimed
US-8101561-B2 Composition and method for treating semiconductor substrate surface LASERWORT LTD (HK) 2012-01-24 US claimed
US-20110118165-A1 COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE SURFACE Lee, Wai Mun (US) 2011-05-19 US claimed
US-8173584-B2 Composition and method for treating semiconductor substrate surface LASERWORT LTD (HK) 2012-05-08 US disclosed
US-8173584-B2 Composition and method for treating semiconductor substrate surface LASERWORT LTD (HK) 2012-05-08 US disclosed
US-20120083436-A1 COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE SURFACE LASERWORT LTD (HK) 2012-04-05 US disclosed
US-20120083436-A1 COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE SURFACE LASERWORT LTD (HK) 2012-04-05 US disclosed
US-8101561-B2 Composition and method for treating semiconductor substrate surface LASERWORT LTD (HK) 2012-01-24 US disclosed
US-8101561-B2 Composition and method for treating semiconductor substrate surface LASERWORT LTD (HK) 2012-01-24 US disclosed
US-20110118165-A1 COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE SURFACE Lee, Wai Mun (US) 2011-05-19 US disclosed
US-20110118165-A1 COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE SURFACE Lee, Wai Mun (US) 2011-05-19 US disclosed