SCHEMBL3965647

SCHEMBL3965647

O=S(=O)(OS1(c2ccc(OCc3ccccc3)c3ccccc23)CCCC1)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
FABP4 P15090 1/20 0.36
CA1 P00915 5/20 0.35
CA2 P00918 5/20 0.35
SLC40A1 Q9NP59 1/20 0.35
POLB P06746 1/20 0.35
NPC1 O15118 2/20 0.34
MAPT P10636 2/20 0.34
RAB9A P51151 2/20 0.34
SMN1; SMN2 Q16637 2/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
CCR8 P51685 1/20 0.34
MRGPRX4 Q96LA9 1/20 0.32
LMNA P02545 1/20 0.31
HPGD P15428 1/20 0.31
HTT P42858 1/20 0.31
NPSR1 Q6W5P4 1/20 0.31
MMP1 P03956 2/20 0.31
MMP2 P08253 2/20 0.31
MMP9 P14780 2/20 0.31
MMP8 P22894 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3973475 0.99 CA1 (0.36) FABP4CA1CA2SLC40A1POLB
SCHEMBL3973457 0.90 FABP4 (0.39) FABP4SLC40A1POLBNPC1MAPT
SCHEMBL3119750 0.88 TSHR (0.42) FABP4POLBMAPTSMN1; SMN2LMNA
SCHEMBL704518 0.87 TSHR (0.41) FABP4CA1CA2POLBMAPT
SCHEMBL3969489 0.86 HTT (0.32) LMNAHTT
SCHEMBL701333 0.86 KMT2A (0.41) FABP4CA1CA2LMNAHTT
SCHEMBL3970056 0.85 HTT (0.31) CA1CA2LMNAHTT
SCHEMBL3975128 0.85 MEN1 (0.32) LMNAHTT
SCHEMBL700903 0.85 KMT2A (0.40) FABP4CA1CA2LMNAHTT
SCHEMBL190940 0.85 SLC2A1 (0.38) FABP4L3MBTL1LMNAHTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7531286-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-05-12 US disclosed
US-7510817-B2 Photoresist polymer compositions JSR CORPORATION (JP) 2009-03-31 US disclosed
EP-1641848-B1 PHOTORESIST POLYMER COMPOSITIONS JSR CORP (JP) 2007-08-22 EP disclosed
US-20060257781-A1 Photoacid generator, and a polymer with units of 2-alkyladamantyl (meth)acrylate, 3-hydroxyadamantyl (meth)acrylate, 1-alkylcyclopentyl (meth)acrylate or 7-oxo-3,8-methano-6-oxabicyclo(3.2.1)octan-4-yl (meth)acrylate, made with a chain transfer agent; e.g. RAFT polymer; narrow polydispersity FREESLATE, INC. 2006-11-16 US disclosed
US-7105269-B2 Copolymer, polymer mixture, and radiation-sensitive resin composition JSR CORPORATION (JP) 2006-09-12 US disclosed
EP-1641849-A1 PHOTORESIST POLYMERS AND COMPOSITIONS HAVING ACRYLIC- OR METHACRYLIC-BASED POLYMERIC RESIN PREPARED BY A LIVING FREE RADICAL PROCESS Symyx Technologies, Inc. (US) 2006-04-05 EP disclosed
EP-1641848-A1 PHOTORESIST POLYMER COMPOSITIONS JSR Corporation (JP) 2006-04-05 EP disclosed
WO-2005003198-A1 PHOTORESIST POLYMER COMPOSITIONS JSR CORPORATION (JP) 2005-01-13 WO disclosed
WO-2005000923-A1 PHOTORESIST POLYMERS AND COMPOSITIONS HAVING ACRYLIC- OR METHACRYLIC-BASED POLYMERIC RESIN PREPARED BY A LIVING FREE RADICAL PROCESS SYMYX TECHNOLOGIES, INC. (US) 2005-01-06 WO disclosed
US-20030203309-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-10-30 US disclosed
US-20030157423-A1 Copolymer, polymer mixture, and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-08-21 US disclosed