SCHEMBL397011

SCHEMBL397011

C=CC(=O)OCC([SiH3])(O[Si](C)(C)C)O[Si](C)(C)C

nearest known ligand 0.47

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.47
TP53 P04637 3/20 0.47
HIF1A Q16665 3/20 0.47
CYP3A4 P08684 2/20 0.47
MAPK1 P28482 1/20 0.47
SMN1; SMN2 Q16637 1/20 0.47
THRB P10828 2/20 0.44
TSHR P16473 7/20 0.43
HPGD P15428 1/20 0.43
HSD17B10 Q99714 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL397195 0.84 TSHR (0.46) ALDH1A1TP53HIF1ACYP3A4MAPK1
SCHEMBL6037085 0.83 ALDH1A1 (0.44) ALDH1A1TP53HIF1ACYP3A4MAPK1
SCHEMBL5780258 0.81 ALDH1A1 (0.50) ALDH1A1TP53HIF1ACYP3A4MAPK1
SCHEMBL394437 0.81 TSHR (0.52) ALDH1A1TP53HIF1ACYP3A4MAPK1
SCHEMBL663437 0.79 ALDH1A1 (0.52) ALDH1A1TP53HIF1ACYP3A4MAPK1
SCHEMBL663277 0.76 ALDH1A1 (0.48) ALDH1A1TP53HIF1ACYP3A4MAPK1
SCHEMBL664982 0.75 TSHR (0.48) ALDH1A1TP53HIF1ACYP3A4MAPK1
SCHEMBL393525 0.75 TSHR (0.40) ALDH1A1THRBTSHR
SCHEMBL20382186 0.75 ALDH1A1 (0.43) ALDH1A1TP53HIF1ACYP3A4MAPK1
SCHEMBL665501 0.74 TSHR (0.50) ALDH1A1TP53HIF1ACYP3A4MAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7816464-B2 Polymer particle dispersion, cosmetic composition comprising it and cosmetic process using it L'OREAL, S.A. (FR) 2010-10-19 US claimed
US-7282550-B2 Composition to provide a layer with uniform etch characteristics MOLECULAR IMPRINTS, INC. (US) 2007-10-16 US claimed
US-20060035029-A1 Method to provide a layer with uniform etch characteristics MOLECULAR IMPRINTS, INC. (US) 2006-02-16 US claimed
US-20060036051-A1 Composition to provide a layer with uniform etch characteristics MOLECULAR IMPRINTS, INC. (US) 2006-02-16 US claimed
US-8110697-B2 Method for the production of polymerizable silicones WACKER CHEMIE AG (DE) 2012-02-07 US disclosed
US-8101789-B2 Method for the production of polymerizable silicones WACKER CHEMIE AG (DE) 2012-01-24 US disclosed
US-7939131-B2 Method to provide a layer with uniform etch characteristics MOLECULAR IMPRINTS, INC. (US) 2011-05-10 US disclosed
US-20100041909-A1 METHOD FOR THE PRODUCTION OF POLYMERIZABLE SILICONES WACKER CHEMIE AG (DE) 2010-02-18 US disclosed
US-20100029972-A1 METHOD FOR THE PRODUCTION OF POLYMERIZABLE SILICONES WACKER CHEMIE AG (DE) 2010-02-04 US disclosed
EP-2146369-A2 Method of forming an in-situ recessed structure MOLECULAR IMPRINTS, INC. (US) 2010-01-20 EP disclosed
EP-2146370-A2 Method of forming an in-situ recessed structure MOLECULAR IMPRINTS, INC. (US) 2010-01-20 EP disclosed
US-7547504-B2 Pattern reversal employing thick residual layers MOLECULAR IMPRINTS, INC. (US) 2009-06-16 US disclosed
US-7241395-B2 Reverse tone patterning on surfaces having planarity perturbations MOLECULAR IMPRINTS, INC. (US) 2007-07-10 US disclosed
US-7205244-B2 Patterning substrates employing multi-film layers defining etch-differential interfaces MOLECULAR IMPRINTS (US) 2007-04-17 US disclosed
US-7041604-B2 Method of patterning surfaces while providing greater control of recess anisotropy MOLECULAR IMPRINTS, INC. (US) 2006-05-09 US disclosed
US-20060063387-A1 Method of Patterning Surfaces While Providing Greater Control of Recess Anisotropy MOLECULAR IMPRINTS, INC. (US) 2006-03-23 US disclosed
US-20060060557-A1 Reverse tone patterning on surfaces having surface planarity perturbations CITIBANK, N.A. 2006-03-23 US disclosed
US-20060063112-A1 Pattern reversal employing thick residual layers MOLECULAR IMPRINTS, INC. (US) 2006-03-23 US disclosed
US-20060063359-A1 Patterning substrates employing multi-film layers defining etch differential interfaces MOLECULAR IMPRINTS, INC. (US) 2006-03-23 US disclosed
US-20060063277-A1 Method of forming an in-situ recessed structure MOLECULAR IMPRINTS, INC. (US) 2006-03-23 US disclosed