Predicted protein targets (top 15)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | IMPDH2 | P12268 | 1/20 | 0.36 |
| ▸ | IMPDH1 | P20839 | 1/20 | 0.36 |
| ▸ | CA1 | P00915 | 5/20 | 0.35 |
| ▸ | CA2 | P00918 | 5/20 | 0.35 |
| ▸ | SLC22A12 | Q96S37 | 6/20 | 0.35 |
| ▸ | HSD11B1 | P28845 | 2/20 | 0.33 |
| ▸ | NR3C1 | P04150 | 1/20 | 0.32 |
| ▸ | PGR | P06401 | 1/20 | 0.32 |
| ▸ | NR3C2 | P08235 | 1/20 | 0.32 |
| ▸ | AR | P10275 | 2/20 | 0.32 |
| ▸ | ABCC9 | O60706 | 2/20 | 0.31 |
| ▸ | ABCC8 | Q09428 | 2/20 | 0.31 |
| ▸ | KCNJ11 | Q14654 | 2/20 | 0.31 |
| ▸ | KCNJ8 | Q15842 | 2/20 | 0.31 |
| ▸ | NR1H3 | Q13133 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3974776 | 0.99 | IMPDH2 (0.37) | IMPDH2IMPDH1CA1CA2SLC22A12 | |
| SCHEMBL3968561 | 0.86 | IMPDH2 (0.35) | IMPDH2IMPDH1CA1CA2SLC22A12 | |
| SCHEMBL2517293 | 0.85 | SLC22A12 (0.41) | IMPDH2IMPDH1SLC22A12HSD11B1AR | |
| SCHEMBL3970505 | 0.85 | IMPDH2 (0.35) | IMPDH2IMPDH1CA1CA2SLC22A12 | |
| SCHEMBL3970515 | 0.83 | CA1 (0.35) | CA1CA2 | |
| SCHEMBL3974482 | 0.82 | CYP1A2 (0.34) | CA1CA2 | |
| SCHEMBL3114547 | 0.79 | CA1 (0.40) | CA1CA2PGR | |
| SCHEMBL3968808 | 0.78 | MMP1 (0.38) | CA1CA2HSD11B1ARABCC9 | |
| SCHEMBL3114242 | 0.78 | CA1 (0.41) | CA1CA2PGR | |
| SCHEMBL3970341 | 0.77 | MMP1 (0.38) | CA1CA2HSD11B1ARABCC9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7531286-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2009-05-12 | — | — | US | disclosed |
| US-7510817-B2 | Photoresist polymer compositions | JSR CORPORATION (JP) | 2009-03-31 | — | — | US | disclosed |
| US-20070248911-A1 | Pattern forming method and bilayer film | IWASAWA HARUO | 2007-10-25 | — | — | US | disclosed |
| EP-1641848-B1 | PHOTORESIST POLYMER COMPOSITIONS | JSR CORP (JP) | 2007-08-22 | — | — | EP | disclosed |
| US-7244549-B2 | Pattern forming method and bilayer film | JSR CORPORATION (JP) | 2007-07-17 | — | — | US | disclosed |
| US-7202016-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2007-04-10 | — | — | US | disclosed |
| US-20060257781-A1 | Photoacid generator, and a polymer with units of 2-alkyladamantyl (meth)acrylate, 3-hydroxyadamantyl (meth)acrylate, 1-alkylcyclopentyl (meth)acrylate or 7-oxo-3,8-methano-6-oxabicyclo(3.2.1)octan-4-yl (meth)acrylate, made with a chain transfer agent; e.g. RAFT polymer; narrow polydispersity | FREESLATE, INC. | 2006-11-16 | — | — | US | disclosed |
| US-7078148-B2 | Photoresist with improved sensitivity and resolution to deep ultraviolet rays/excimer lasers; semiconductors; integrated circuits | JSR CORPORATION (JP) | 2006-07-18 | — | — | US | disclosed |
| EP-1641849-A1 | PHOTORESIST POLYMERS AND COMPOSITIONS HAVING ACRYLIC- OR METHACRYLIC-BASED POLYMERIC RESIN PREPARED BY A LIVING FREE RADICAL PROCESS | Symyx Technologies, Inc. (US) | 2006-04-05 | — | — | EP | disclosed |
| EP-1641848-A1 | PHOTORESIST POLYMER COMPOSITIONS | JSR Corporation (JP) | 2006-04-05 | — | — | EP | disclosed |
| US-20030203309-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-10-30 | — | — | US | disclosed |
| US-20030191268-A1 | Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin composition | IWASAWA HARUO (JP) | 2003-10-09 | — | — | US | disclosed |
| US-20030073040-A1 | Pattern forming method and bilayer film | JSR CORPORATION (JP) | 2003-04-17 | — | — | US | disclosed |
| US-6531260-B2 | Photoresist | JSR CORPORATION (JP) | 2003-03-11 | — | — | US | disclosed |
| US-6482568-B1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-11-19 | — | — | US | disclosed |
| US-20020058201-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-05-16 | — | — | US | disclosed |
| EP-1193558-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2002-04-03 | — | — | EP | disclosed |
| US-20010041769-A1 | Polysiloxane, method of manufacturing same, silicon-containingalicyclic compouns, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2001-11-15 | — | — | US | disclosed |
| EP-1142928-A1 | Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin compounds | JSR Corporation (JP) | 2001-10-10 | — | — | EP | disclosed |
| EP-1085379-A1 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-03-21 | — | — | EP | disclosed |