SCHEMBL3988458

SCHEMBL3988458

COC([SiH3])([SiH3])OC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL115919 0.70
SCHEMBL7934193 0.70
SCHEMBL767438 0.67
SCHEMBL2049488 0.64
SCHEMBL1055570 0.64
Methylamine SCHEMBL16192060 0.61
SCHEMBL14895494 0.61 ALDH1A1 (0.40)
SCHEMBL5412519 0.61 ALDH1A1 (0.40)
SCHEMBL3888380 0.61 ALDH1A1 (0.40)
SCHEMBL6223 0.56

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7544827-B2 Process for depositing low dielectric constant materials ASM JAPAN K.K. (JP) 2009-06-09 US disclosed
US-20070032676-A1 Process for depositing low dielectric constant materials TODD MICHAEL A 2007-02-08 US disclosed
US-7144620-B2 Process for depositing low dielectric constant materials ASM JAPAN K.K. (JP) 2006-12-05 US disclosed
US-20040161617-A1 Process for depositing low dielectric constant materials ASM JAPAN K.K. (JP) 2004-08-19 US disclosed
US-6733830-B2 VAPOR DEPOSITED FILM ASM JAPAN K.K. (JP) 2004-05-11 US disclosed
US-20010055672-A1 Low dielectric constant materials and processes ASM JAPAN K.K. (JP) 2001-12-27 US disclosed
EP-1123991-A2 Low dielectric constant materials and processes ASM JAPAN K.K. (JP) 2001-08-16 EP disclosed