⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13455059 | 0.76 | HSD11B1 (0.37) | — | |
| SCHEMBL998 | 0.76 | — | — | |
| Adamantane SCHEMBL28206490 | 0.72 | ALDH1A1 (0.46) | — | |
| SCHEMBL855034 | 0.72 | CA12 (0.45) | — | |
| SCHEMBL28308695 | 0.71 | — | — | |
| Hydrochloric Acid SCHEMBL28089030 | 0.71 | — | — | |
| SCHEMBL19645134 | 0.68 | MAPT (0.33) | — | |
| Hydrochloric Acid SCHEMBL28884517 | 0.68 | — | — | |
| Hydrochloric Acid SCHEMBL27647666 | 0.68 | — | — | |
| Hydrochloric Acid SCHEMBL28089029 | 0.68 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7588876-B2 | Resist material and pattern formation method | PANASONIC CORPORATION (JP) | 2009-09-15 | — | — | US | disclosed |
| US-7413843-B2 | Sulfonamide compound, polymer compound, resist material and pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2008-08-19 | — | — | US | disclosed |
| US-7378216-B2 | Resist material and pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2008-05-27 | — | — | US | disclosed |
| US-20070099117-A1 | Sulfonamide compound, polymer compound, resist material and pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2007-05-03 | — | — | US | disclosed |
| US-7166418-B2 | Selectively irradiating resist film with high energy beams of light such as krypton fluoride, argon fluoride, fluorine, krypton, argon or soft X-ray laser ; developing polymer with unsaturated sulfonamide units | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2007-01-23 | — | — | US | disclosed |
| EP-1602976-B1 | Resist material and pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) | 2007-01-17 | — | — | EP | disclosed |
| US-20050277057-A1 | Resist material and pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-12-15 | — | — | US | disclosed |
| EP-1602976-A1 | Resist material and pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-12-07 | — | — | EP | disclosed |
| US-20050266338-A1 | Resist material and pattern formation method | PANASONIC CORPORATION (JP) | 2005-12-01 | — | — | US | disclosed |
| US-20050266337-A1 | Resist material and pattern formation method | PANNOVA SEMIC, LLC | 2005-12-01 | — | — | US | disclosed |
| EP-1517181-A1 | Sulfonamide compound, polymer compound, reist material and pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-03-23 | — | — | EP | disclosed |
| US-20050058935-A1 | Sulfonamide compound, polymer compound, resist material and pattern formation method | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2005-03-17 | — | — | US | disclosed |