SCHEMBL855034

SCHEMBL855034

ClCOCC12CC3CC(CC(C3)C1)C2

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA12 O43570 1/20 0.45
CA1 P00915 1/20 0.45
CA2 P00918 1/20 0.45
CA9 Q16790 1/20 0.45
GRIN2D O15399 4/20 0.44
GRIN3B O60391 4/20 0.44
GRIN1 Q05586 4/20 0.44
GRIN2A Q12879 4/20 0.44
GRIN2B Q13224 4/20 0.44
GRIN2C Q14957 4/20 0.44
GRIN3A Q8TCU5 4/20 0.44
GBA2 Q9HCG7 10/20 0.40
ALDH1A1 P00352 1/20 0.40
MEN1 O00255 1/20 0.38
KMT2A Q03164 1/20 0.38
L3MBTL1 Q9Y468 1/20 0.38
GBA1 P04062 5/20 0.37
UGCG Q16739 4/20 0.36
MGAM O43451 1/20 0.36
LCT P09848 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5095244 0.87 GRIN2D (0.50) CA12CA1CA2CA9GRIN2D
SCHEMBL14947973 0.86 GAA (0.37) CA12CA1CA2CA9GRIN2D
SCHEMBL12511153 0.84 GBA2 (0.44) CA12CA1CA2CA9GRIN2D
SCHEMBL3913351 0.80 CA12 (0.45) CA12CA1CA2CA9GRIN2D
SCHEMBL13998865 0.79 MEN1 (0.51) CA12CA1CA2CA9GRIN2D
SCHEMBL4808151 0.79 GBA2 (0.38) CA12CA1CA2CA9GRIN2D
SCHEMBL92293 0.78 ALDH1A1 (0.47) CA12CA1CA2CA9GRIN2D
SCHEMBL919840 0.78 CA12 (0.44) CA12CA1CA2CA9GRIN2D
SCHEMBL13998861 0.78 PKM (0.41) CA12CA1CA2CA9ALDH1A1
SCHEMBL20612578 0.77 CA12 (0.47) CA12CA1CA2CA9GRIN2D

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 53 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9017918-B2 Monomer, polymer, chemically amplified positive resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-04-28 US disclosed
US-8889333-B2 Salt, photoresist composition, and method for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-11-18 US disclosed
US-8889333-B2 Salt, photoresist composition, and method for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-11-18 US disclosed
EP-2433972-B1 Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern TOKYO OHKA KOGYO CO LTD (JP) 2014-11-12 EP disclosed
EP-2433972-B1 Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern TOKYO OHKA KOGYO CO LTD (JP) 2014-11-12 EP disclosed
US-8741541-B2 Compound, resin, photoresist composition, and method for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-06-03 US disclosed
US-8741541-B2 Compound, resin, photoresist composition, and method for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-06-03 US disclosed
EP-1717261-B1 POLYMER COMPOUND, PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER COMPOUND, AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO LTD (JP) 2014-01-01 EP disclosed
EP-1717261-B1 POLYMER COMPOUND, PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER COMPOUND, AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO LTD (JP) 2014-01-01 EP disclosed
US-20130122424-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-05-16 US disclosed
CN-1993393-A Fluorine-containing compound, fluorine-containing polymer, resist composition, and resist protective film composition ASAHI GLASS CO LTD (JP) 2007-07-04 CN disclosed
US-7211366-B2 Photoresist composition for deep ultraviolet lithography AZ ELECTRONIC MATERIALS USA CORP. (US) 2007-05-01 US disclosed
EP-1717261-A1 POLYMER COMPOUND, PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER COMPOUND, AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2006-11-02 EP disclosed
CN-1826358-A Fluorine-containing compound, fluorine-containing polymer, method for producing the same, and resist composition containing the same ASAHI GLASS CO LTD (JP) 2006-08-30 CN disclosed
WO-2005118656-A2 PHOTORESISTS COMPRISING POLYMERS DERIVED FROM FLUOROALCOHOL-SUBSTITUTED POLYCYCLIC MONOMERS E.I. DUPONT DE NEMOURS AND COMPANY (US) 2005-12-15 WO disclosed
EP-1602011-A2 PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY AZ Electronic Materials USA Corp. (US) 2005-12-07 EP disclosed
US-20050004391-A1 Adamantyl vinyl ether compound and production process for the same IDEMITSU PETROCHEMICAL CO., LTD. (JP) 2005-01-06 US disclosed
EP-1486480-A1 Adamantyl vinyl ether compound and production process for the same Idemitsu Petrochemical Co., Ltd. (JP) 2004-12-15 EP disclosed
WO-2004074928-A2 PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY AZ ELECTRONIC MATERIALS USA CORP. (US) 2004-09-02 WO disclosed
US-20040166433-A1 Photoresist composition for deep ultraviolet lithography AZ ELECTRONIC MATERIALS USA CORP. 2004-08-26 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20050004391-A1 Adamantyl vinyl ether compound and production process for the same NOTUM, CYP4A11, CYP4F11 CA12 2410/4885CA1 1929/4885CA2 3361/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.