SCHEMBL4120286

SCHEMBL4120286

O=C(CS(=O)(=O)O)OC1C2CC3C(=O)OC1C3O2

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18775931 0.92
SCHEMBL15830902 0.87
SCHEMBL11989124 0.83
SCHEMBL961479 0.83
SCHEMBL25687081 0.82
SCHEMBL12405318 0.82 CHRM2 (0.31)
SCHEMBL11989122 0.82 PRKCA (0.30)
SCHEMBL799806 0.82
SCHEMBL14665420 0.81
SCHEMBL15147138 0.80 NLRP3 (0.38)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 41 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2023189503-A1 RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND PHOTODEGRADABLE BASE JSR株式会社 2023-10-05 WO disclosed
US-11754926-B2 Method of forming resist pattern, resist composition and method of producing the same TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-12 US disclosed
WO-2023120200-A1 RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD JSR株式会社 2023-06-29 WO disclosed
WO-2023090129-A1 RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN JSR株式会社 2023-05-25 WO disclosed
US-20230140810-A1 MATERIAL FOR FORMING ADHESIVE FILM, PATTERNING PROCESS, AND METHOD FOR FORMING ADHESIVE FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 US disclosed
US-20230127914-A1 RESIST PATTERN FORMATION METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2023-04-27 US disclosed
US-20180086948-A1 ADHESIVE COMPOSITION, BIO-ELECTRODE, METHOD FOR MANUFACTURING A BIO-ELECTRODE, AND SALT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-29 US disclosed
US-20180072930-A1 ADHESIVE COMPOSITION, BIO-ELECTRODE, AND METHOD FOR MANUFACTURING A BIO-ELECTRODE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-15 US disclosed
US-20170115566-A1 RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-27 US disclosed
US-9436093-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-09-06 US disclosed
US-8367299-B2 Resist composition, method of forming resist pattern, compound and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2013-02-05 US disclosed
US-20120264058-A1 RESIST COMPOSITION FOR NEGATIVE DEVELOPMENT AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-10-18 US disclosed
US-20120208124-A1 RESIST COMPOSITION FOR EUV, METHOD FOR PRODUCING RESIST COMPOSITION FOR EUV, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-08-16 US disclosed
US-20120164580-A1 NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-28 US disclosed
US-8192915-B2 Positive resist composition, method of forming resist pattern, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-05 US disclosed
US-20120107744-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2012-05-03 US disclosed
US-20120015297-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO.CO., LTD. (JP) 2012-01-19 US disclosed
US-20120009521-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2012-01-12 US disclosed
US-20110008728-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-01-13 US disclosed
US-20100062369-A1 Positive resist composition, method of forming resist pattern, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2010-03-11 US disclosed