SCHEMBL4135709

SCHEMBL4135709

CCO[Si](CCCNCCNCc1ccccc1)(OCC)OCC

nearest known ligand 0.54

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
CHRM2 P08172 1/20 0.54
MEN1 O00255 1/20 0.52
KMT2A Q03164 1/20 0.52
TDP1 Q9NUW8 1/20 0.52
MAOA P21397 1/20 0.51
SIGMAR1 Q99720 4/20 0.47
SCN8A Q9UQD0 1/20 0.46
GAA P10253 1/20 0.42
MAPT P10636 1/20 0.42
DRD4 P21917 1/20 0.41
BCHE P06276 1/20 0.41
MPO P05164 1/20 0.41
ALDH1A1 P00352 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL136399 0.97 MAOA (0.55) CHRM2MEN1KMT2ATDP1MAOA
SCHEMBL9761086 0.95 CHRM2 (0.62) CHRM2MEN1KMT2ATDP1MAOA
Ethylene SCHEMBL27935498 0.94 MAOA (0.51) CHRM2MEN1KMT2ATDP1MAOA
SCHEMBL20503705 0.93 CHRM2 (0.50) CHRM2MEN1KMT2ATDP1MAOA
SCHEMBL15360778 0.92 MAOA (0.58) CHRM2MEN1KMT2ATDP1MAOA
SCHEMBL29008123 0.90 MAOA (0.50) CHRM2MEN1KMT2ATDP1MAOA
SCHEMBL4134564 0.88 SIGMAR1 (0.57) MEN1KMT2ASIGMAR1GAADRD4
SCHEMBL15361183 0.87 MEN1 (0.53) CHRM2MEN1KMT2ATDP1MAOA
SCHEMBL21271612 0.86 SIGMAR1 (0.58) MEN1KMT2ASIGMAR1GAADRD4
SCHEMBL29008266 0.86 SIGMAR1 (0.59) SIGMAR1DRD4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 69 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12261143-B2 Method of manufacturing substrate layered body and layered body MITSUI CHEMICALS, INC. (JP) 2025-03-25 US disclosed
WO-2025023139-A1 LAMINATE AND LAMINATE PRODUCTION METHOD 三井化学株式会社 2025-01-30 WO disclosed
WO-2025005084-A1 SUBSTRATE LAMINATE 三井化学株式会社 2025-01-02 WO disclosed
WO-2024225232-A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR PRODUCING SAME 三井化学株式会社 2024-10-31 WO disclosed
WO-2024177116-A1 PRODUCTION METHOD FOR SEMICONDUCTOR CHIP WITH RESIN LAYER AND PRODUCTION METHOD FOR SUBSTRATE LAMINATE 三井化学株式会社 2024-08-29 WO disclosed
WO-2024177149-A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR PRODUCING SAME 三井化学株式会社 2024-08-29 WO disclosed
WO-2024177074-A1 METHOD FOR MANUFACTURING SUBSTRATE LAMINATE 三井化学株式会社 2024-08-29 WO disclosed
WO-2024172044-A1 METHOD FOR MANUFACTURING SUBSTRATE LAYERED BODY, LAYERED BODY, AND SUBSTRATE LAYERED BODY 三井化学株式会社 2024-08-22 WO disclosed
WO-2024166789-A1 SEMICONDUCTOR STRUCTURE AND PRODUCTION METHOD FOR SAME 三井化学株式会社 2024-08-15 WO disclosed
WO-2024162446-A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME 三井化学株式会社 2024-08-08 WO disclosed
EP-1418021-B1 Polishing pad JSR CORP (JP) 2009-01-21 EP disclosed
EP-1348747-B1 Gas barrier coating composition and method for manufacturing same JSR CORP (JP) 2007-02-14 EP disclosed
EP-1106661-B1 Coating composition and hardened film obtained therefrom JSR CORP (JP) 2006-03-08 EP disclosed
US-6992123-B2 Polishing pad JSR CORPORATION (JP) 2006-01-31 US disclosed
US-20040118051-A1 Polishing pad JSR CORPORATION (JP) 2004-06-24 US disclosed
EP-1418021-A1 Polishing pad JSR Corporation (JP) 2004-05-12 EP disclosed
US-6660394-B1 Siloxane-vinyl copolymer, oxazoline crosslinker and organo-metallic betaketone or multifunctional hydrazine; rapid low temperature curing; water, weather, chemical, acid, alkali and wear resistance; durable adhesion JSR CORPORATION (JP) 2003-12-09 US disclosed
US-20030187113-A1 Gas barrier coating composition and method for manufacturing same JSR CORPORATION (JP) 2003-10-02 US disclosed
EP-1348747-A1 Gas barrier coating composition and method for manufacturing same JSR Corporation (JP) 2003-10-01 EP disclosed
EP-1106661-A2 Coating composition and hardened film obtained therefrom JSR Corporation (JP) 2001-06-13 EP disclosed