Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | FFAR3 | O14843 | 2/20 | 0.34 |
| ▸ | HDAC3 | O15379 | 2/20 | 0.34 |
| ▸ | HDAC1 | Q13547 | 2/20 | 0.34 |
| ▸ | HDAC2 | Q92769 | 2/20 | 0.34 |
| ▸ | HDAC8 | Q9BY41 | 2/20 | 0.34 |
| ▸ | FAAH | O00519 | 4/20 | 0.31 |
| ▸ | CNR1 | P21554 | 1/20 | 0.31 |
| ▸ | CNR2 | P34972 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6138473 | 0.97 | FFAR3 (0.34) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL28159164 | 0.91 | ALDH1A1 (0.35) | HDAC3HDAC1HDAC2HDAC8FAAH | |
| SCHEMBL1635147 | 0.89 | ALDH1A1 (0.34) | FAAHCNR1CNR2 | |
| SCHEMBL4147702 | 0.89 | ALDH1A1 (0.34) | FAAHCNR1CNR2 | |
| SCHEMBL5974344 | 0.89 | ALDH1A1 (0.34) | FAAHCNR1CNR2 | |
| SCHEMBL25284141 | 0.89 | ALDH1A1 (0.34) | FAAHCNR1CNR2 | |
| SCHEMBL4134314 | 0.88 | FFAR3 (0.36) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL15901822 | 0.84 | FFAR3 (0.36) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL483263 | 0.84 | FFAR3 (0.36) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL7509947 | 0.84 | FFAR3 (0.36) | FFAR3HDAC3HDAC1HDAC2HDAC8 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2023037979-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, MULTILAYER BODY USING SAID COMPOSITION, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT | 日産化学株式会社 | 2023-03-16 | — | — | WO | disclosed |
| WO-2023008507-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND SILICON-CONTAINING RESIST UNDERLAYER FILM | 日産化学株式会社 | 2023-02-02 | — | — | WO | disclosed |
| WO-2022260154-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | 日産化学株式会社 | 2022-12-15 | — | — | WO | disclosed |
| WO-2022210901-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | 日産化学株式会社 | 2022-10-06 | — | — | WO | disclosed |
| US-20090214796-A1 | Method for Forming Antireflection Film | MITSUBISHI DENKI KABUSHIKI KAISHA (JP) | 2009-08-27 | — | — | US | disclosed |
| EP-1890172-A1 | METHOD FOR FORMING ANTIREFLECTION FILM | Hitachi Chemical Co., Ltd. (JP) | 2008-02-20 | — | — | EP | disclosed |
| EP-1117102-B1 | Method of manufacturing material for forming insulating film | JSR CORP (JP) | 2005-08-10 | — | — | EP | disclosed |
| US-6642352-B2 | Providing a silicon inorganic polymer compound or polyarylenes or polyphenylene ether organic polymer compound, treating the polymeric compound with a zeta-potential producing filter material, and producing curable polymer compound | JSR CORPORATION (JP) | 2003-11-04 | — | — | US | disclosed |
| US-20010009936-A1 | Method of manufacturing material for forming insulating film | JSR CORPORATION (JP) | 2001-07-26 | — | — | US | disclosed |