Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.34 |
| ▸ | FAAH | O00519 | 4/20 | 0.34 |
| ▸ | CNR1 | P21554 | 1/20 | 0.34 |
| ▸ | CNR2 | P34972 | 1/20 | 0.34 |
| ▸ | LMNA | P02545 | 2/20 | 0.31 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28159164 | 0.98 | ALDH1A1 (0.35) | ALDH1A1FAAHCNR1CNR2LMNA | |
| SCHEMBL25284141 | 0.96 | ALDH1A1 (0.34) | ALDH1A1FAAHCNR1CNR2LMNA | |
| SCHEMBL1635147 | 0.96 | ALDH1A1 (0.34) | ALDH1A1FAAHCNR1CNR2LMNA | |
| SCHEMBL5974344 | 0.96 | ALDH1A1 (0.34) | ALDH1A1FAAHCNR1CNR2LMNA | |
| SCHEMBL4138225 | 0.89 | FFAR3 (0.34) | FAAHCNR1CNR2 | |
| SCHEMBL6138473 | 0.89 | FFAR3 (0.34) | FAAHCNR1CNR2 | |
| SCHEMBL124651 | 0.85 | ALDH1A1 (0.37) | ALDH1A1FAAHCNR1CNR2LMNA | |
| SCHEMBL30462935 | 0.85 | ALDH1A1 (0.37) | ALDH1A1FAAHCNR1CNR2LMNA | |
| SCHEMBL2475707 | 0.83 | ALDH1A1 (0.38) | ALDH1A1FAAHCNR1CNR2LMNA | |
| SCHEMBL28891600 | 0.83 | ALDH1A1 (0.46) | ALDH1A1LMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119768742-A | Composition for forming silicon-containing resist underlayer film | 日产化学株式会社 | 2025-04-04 | — | — | CN | disclosed |
| CN-119563142-A | Composition for forming silicon-containing resist underlayer film containing multifunctional sulfonic acid | 日产化学株式会社 | 2025-03-04 | — | — | CN | disclosed |
| WO-2025041813-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING UNDERLAYER FILM FOR INDUCED SELF-ASSEMBLY | 日産化学株式会社 | 2025-02-27 | — | — | WO | disclosed |
| CN-119487453-A | Method for manufacturing laminate and method for manufacturing semiconductor element | 日产化学株式会社 | 2025-02-18 | — | — | CN | disclosed |
| US-20240419073-A1 | ADDITIVE-CONTAINING SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2024-12-19 | — | — | US | disclosed |
| WO-2024237188-A1 | MULTILAYER BODY, METHOD FOR PRODUCING MULTILAYER BODY, AND PHOTOSENSITIVE SURFACE MODIFIER | 日産化学株式会社 | 2024-11-21 | — | — | WO | disclosed |
| WO-2024225431-A1 | COMPOSITION FOR FORMING WET-REMOVABLE SILICON-CONTAINING RESIST UNDERLAYER FILM | 日産化学株式会社 | 2024-10-31 | — | — | WO | disclosed |
| WO-2024195705-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM FOR i-RAY LITHOGRAPHY | 日産化学株式会社 | 2024-09-26 | — | — | WO | disclosed |
| WO-2024185665-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | 日産化学株式会社 | 2024-09-12 | — | — | WO | disclosed |
| WO-2024181394-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM HAVING CARBON-CARBON DOUBLE BOND | 日産化学株式会社 | 2024-09-06 | — | — | WO | disclosed |
| WO-2022210960-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING UNDERLAYER FILM FOR INDUCED SELF-ORGANIZATION | 日産化学株式会社 | 2022-10-06 | — | — | WO | disclosed |
| WO-2022210944-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION | 日産化学株式会社 | 2022-10-06 | — | — | WO | disclosed |
| WO-2022210954-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION | 日産化学株式会社 | 2022-10-06 | — | — | WO | disclosed |
| WO-2022210901-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | 日産化学株式会社 | 2022-10-06 | — | — | WO | disclosed |
| WO-2022210262-A1 | LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR PRODUCING PROCESSED SEMICONDUCTOR SUBSTRATE | 日産化学株式会社 | 2022-10-06 | — | — | WO | disclosed |
| US-20090214796-A1 | Method for Forming Antireflection Film | MITSUBISHI DENKI KABUSHIKI KAISHA (JP) | 2009-08-27 | — | — | US | disclosed |
| EP-1890172-A1 | METHOD FOR FORMING ANTIREFLECTION FILM | Hitachi Chemical Co., Ltd. (JP) | 2008-02-20 | — | — | EP | disclosed |
| EP-1117102-B1 | Method of manufacturing material for forming insulating film | JSR CORP (JP) | 2005-08-10 | — | — | EP | disclosed |
| US-6642352-B2 | Providing a silicon inorganic polymer compound or polyarylenes or polyphenylene ether organic polymer compound, treating the polymeric compound with a zeta-potential producing filter material, and producing curable polymer compound | JSR CORPORATION (JP) | 2003-11-04 | — | — | US | disclosed |
| US-20010009936-A1 | Method of manufacturing material for forming insulating film | JSR CORPORATION (JP) | 2001-07-26 | — | — | US | disclosed |