SCHEMBL4158849

SCHEMBL4158849

CCCCCCCC[SiH](C)c1ccc([SiH](C)CCCCCCCC)cc1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.38
THRB P10828 1/20 0.38
TP53 P04637 3/20 0.35
MEN1 O00255 1/20 0.35
CYP1A2 P05177 1/20 0.35
CYP2D6 P10635 1/20 0.35
MAPT P10636 1/20 0.35
CYP2C9 P11712 1/20 0.35
CYP2C19 P33261 1/20 0.35
KMT2A Q03164 1/20 0.35
KDM4E B2RXH2 2/20 0.34
LMNA P02545 2/20 0.34
HTT P42858 2/20 0.34
ESR1 P03372 2/20 0.34
ADRA2A P08913 2/20 0.34
ADORA3 P0DMS8 2/20 0.34
TACR2 P21452 2/20 0.34
SLC6A2 P23975 2/20 0.34
SLC6A4 P31645 2/20 0.34
SLC6A3 Q01959 2/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL31216241 0.92 HTT (0.42) TSHRTHRBTP53MEN1CYP1A2
SCHEMBL31216320 0.90 SMN1; SMN2 (0.41) KDM4EKCNH2SMN1; SMN2ALDH1A1
SCHEMBL31216226 0.89 DNM1 (0.39) TP53MEN1CYP1A2CYP2D6CYP2C19
SCHEMBL8992407 0.89 DNM1 (0.39) TP53MEN1CYP1A2CYP2D6CYP2C19
SCHEMBL12695540 0.89 DNM1 (0.39) TP53MEN1CYP1A2CYP2D6CYP2C19
SCHEMBL8992246 0.89 DNM1 (0.39) TP53MEN1CYP1A2CYP2D6CYP2C19
SCHEMBL31216322 0.87 HDAC3 (0.42) TSHRMEN1MAPTKMT2ALMNA
SCHEMBL31216308 0.87 MMP2 (0.40) MEN1MAPTKMT2AALDH1A1RARB
SCHEMBL31216259 0.87 KCNH2 (0.32) KCNH2
SCHEMBL31216215 0.87 SMN1; SMN2 (0.35) SLC6A2SLC6A4SLC6A3SMN1; SMN2ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6924545-B2 Low-dielectric-constant interlayer insulating film composed of borazine-silicon-based polymer and semiconductor device NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE (JP) 2005-08-02 US claimed
US-20020142533-A1 Low-dielectric-constant interlayer insulating film composed of borazine-silicon-based polymer and semiconductor device MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2002-10-03 US claimed
US-8362199-B2 Borazine-based resin, process for its production, borazine-based resin composition, insulating film and method for its formation HITACHI CHEMICAL CO., LTD. (JP) 2013-01-29 US disclosed
US-20110313122-A1 BORAZINE-BASED RESIN, PROCESS FOR ITS PRODUCTION, BORAZINE-BASED RESIN COMPOSITION, INSULATING FILM AND METHOD FOR ITS FORMATION MATSUTANI HIROSHI (JP) 2011-12-22 US disclosed
US-7625642-B2 Borazine-based resin, and method for production thereof, borazine based resin composition, insulating coating and method for formation thereof, and electronic parts having the insulating coating HITACHI CHEMICAL CO., LTD (JP) 2009-12-01 US disclosed
US-20090240017-A1 Borazine-based resin, process for its production, borazine-based resin composition, insulating film and method for its formation HITACHI CHEMICAL CO., LTD. (JP) 2009-09-24 US disclosed
US-7427443-B2 Low dielectric constant insulating material and semiconductor device using the material NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) 2008-09-23 US disclosed
US-20060110610-A1 Borazine-based resin, and method for production thereof, borazine based resin composition, insulating coating and method for formation thereof, and electronic parts having the insulating coating NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) 2006-05-25 US disclosed
US-20060097393-A1 Low dielectric constant insulating material and semiconductor device using the material NATIONAL INST. OF ADV. INDUST. SCIENCE AND TECH. (JP) 2006-05-11 US disclosed
US-6924545-B2 Low-dielectric-constant interlayer insulating film composed of borazine-silicon-based polymer and semiconductor device NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE (JP) 2005-08-02 US disclosed
US-20020142533-A1 Low-dielectric-constant interlayer insulating film composed of borazine-silicon-based polymer and semiconductor device MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2002-10-03 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110313122-A1 BORAZINE-BASED RESIN, PROCESS FOR ITS PRODUCTION, BORAZINE-BASED RESIN COMPOSITION, INSULATING FILM AND METHOD FOR ITS FORMATION GRIK5, GJA1, SLC9A5 TSHR 3288/4885THRB 4130/4885TP53 3578/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.