SCHEMBL425476

SCHEMBL425476

CC(C)[Si](Oc1ccccc1)(Oc1ccccc1)C(C)C

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA4 P22748 1/20 0.42
LMNA P02545 1/20 0.40
LTA4H P09960 2/20 0.39
TSHR P16473 1/20 0.39
KDM4E B2RXH2 1/20 0.37
MAOA P21397 2/20 0.36
PTGS1 P23219 2/20 0.36
CHRNB4 P30926 2/20 0.35
CHRNA3 P32297 2/20 0.35
ADRA2A P08913 1/20 0.35
ADRA2B P18089 1/20 0.35
ADRA2C P18825 1/20 0.35
MAOB P27338 1/20 0.35
NISCH Q9Y2I1 1/20 0.35
POLB P06746 1/20 0.34
KCNA3 P22001 1/20 0.33
MTNR1A P48039 3/20 0.32
MTNR1B P49286 3/20 0.32
ADRB2 P07550 1/20 0.32
ADRB1 P08588 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19816768 0.89 CA4 (0.42) CA4LMNALTA4HTSHRKDM4E
SCHEMBL3895995 0.87 CA4 (0.36) CA4LMNALTA4HTSHRKDM4E
SCHEMBL19816771 0.83 LTA4H (0.38) CA4LMNALTA4HTSHRKDM4E
SCHEMBL432208 0.80 CA4 (0.42) CA4LMNALTA4HTSHRKDM4E
SCHEMBL706142 0.80 CA4 (0.42) CA4LMNALTA4HTSHRKDM4E
SCHEMBL10045718 0.79 ELANE (0.58)
SCHEMBL19816479 0.78 CA4 (0.40) CA4LMNALTA4HTSHRKDM4E
SCHEMBL19816807 0.78 CA4 (0.40) CA4LMNALTA4HTSHRKDM4E
SCHEMBL430249 0.78 LMNA (0.39) CA4LMNALTA4HTSHRKDM4E
SCHEMBL705345 0.76 CA4 (0.39) CA4LMNALTA4HTSHRKDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 265 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11059920-B2 Process for producing high cis-1,4-polydiene with lanthanide-based catalyst compositions BRIDGESTONE CORPORATION (JP) 2021-07-13 US claimed
US-20190169330-A1 Process For Producing High Cis-1,4-Polydiene With Lanthanide-Based Catalyst Compositions BRIDGESTONE CORPORATION (JP) 2019-06-06 US claimed
EP-3491030-A1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS Bridgestone Corporation (JP) 2019-06-05 EP claimed
WO-2018022994-A1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS BRIDGESTONE CORPORATION (JP) 2018-02-01 WO claimed
US-20240262964-A1 METHOD OF PRODUCING SILICONE POLYMER TORAY FINE CHEMICALS CO., LTD. (JP) 2024-08-08 US disclosed
EP-4361201-A1 METHOD FOR PRODUCING SILICONE POLYMER Toray Fine Chemicals Co., Ltd. (JP) 2024-05-01 EP disclosed
CN-117413005-A Process for producing siloxane polymer 东丽精细化工株式会社 2024-01-16 CN disclosed
US-20230167244-A1 METHOD OF PRODUCING SILICONE POLYMER TORAY FINE CHEMICALS CO., LTD. (JP) 2023-06-01 US disclosed
EP-4119596-A1 METHOD FOR PRODUCING SILICONE POLYMER Toray Fine Chemicals Co., Ltd. (JP) 2023-01-18 EP disclosed
WO-2022270336-A1 METHOD FOR PRODUCING SILICONE POLYMER 東レ・ファインケミカル株式会社 2022-12-29 WO disclosed
CN-109715680-B Process for preparing high cis-1, 4-polydienes with lanthanide-based catalyst compositions 株式会社普利司通 2021-10-19 CN disclosed
CN-109641835-B Method for producing carbamate 国立研究开发法人产业技术综合研究所 2021-07-20 CN disclosed
EP-1117102-A2 Method of manufacturing material for forming insulating film JSR Corporation (JP) 2001-07-18 EP disclosed
EP-1090967-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-11 EP disclosed
EP-1088868-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-04 EP disclosed
EP-1058274-A1 Composition for film formation and material for insulating film formation JSR Corporation (JP) 2000-12-06 EP disclosed
EP-1045290-A2 Composition for resist underlayer film and method for producing the same JSR Corporation (JP) 2000-10-18 EP disclosed
EP-0921561-A2 Composition for film formation and film JSR Corporation (JP) 1999-06-09 EP disclosed
EP-0226208-B1 INSULATING FILM FOR SEMICONDUCTOR, PRODUCTION OF THE SAME AND LIQUID COMPOSITION FOR PRODUCING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 1991-11-21 EP disclosed
EP-0226208-A2 Insulating film for semiconductor, production of the same and liquid composition for producing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 1987-06-24 EP disclosed