SCHEMBL705345

SCHEMBL705345

CC(C)[Si](Oc1ccccc1)(c1ccc([Si](Oc2ccccc2)(C(C)C)C(C)C)cc1)C(C)C

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA4 P22748 1/20 0.39
LMNA P02545 1/20 0.38
LTA4H P09960 2/20 0.36
TSHR P16473 1/20 0.36
KDM4E B2RXH2 1/20 0.35
MAOA P21397 2/20 0.34
PTGS1 P23219 2/20 0.34
ADRA2A P08913 1/20 0.33
ADRA2B P18089 1/20 0.33
ADRA2C P18825 1/20 0.33
MAOB P27338 1/20 0.33
NISCH Q9Y2I1 1/20 0.33
POLB P06746 1/20 0.33
ESR1 P03372 1/20 0.31
ESR2 Q92731 1/20 0.31
KCNA3 P22001 1/20 0.31
MTNR1A P48039 2/20 0.31
MTNR1B P49286 2/20 0.31
ADRB2 P07550 1/20 0.31
ADRB1 P08588 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL712037 0.95 CA4 (0.39) CA4LMNALTA4HTSHRKDM4E
SCHEMBL713039 0.80 CA4 (0.37) CA4LMNALTA4HTSHRKDM4E
SCHEMBL706142 0.76 CA4 (0.42) CA4LMNALTA4HTSHRKDM4E
SCHEMBL425476 0.76 CA4 (0.42) CA4LMNALTA4HTSHRKDM4E
SCHEMBL432208 0.76 CA4 (0.42) CA4LMNALTA4HTSHRKDM4E
SCHEMBL704336 0.76 CA4 (0.37) CA4LMNALTA4HTSHRKDM4E
SCHEMBL703525 0.76 CA4 (0.37) CA4LMNALTA4HTSHRKDM4E
SCHEMBL19816807 0.74 CA4 (0.40) CA4LMNALTA4HTSHRKDM4E
SCHEMBL19816479 0.74 CA4 (0.40) CA4LMNALTA4HTSHRKDM4E
SCHEMBL2744868 0.73 ESR1 (0.34) CA4LMNATSHRKDM4EMAOA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed