Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.33 |
| ▸ | TSHR | P16473 | 1/20 | 0.33 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13653239 | 0.85 | — | — | |
| SCHEMBL5460500 | 0.84 | — | — | |
| SCHEMBL10793169 | 0.82 | ALDH1A1 (0.35) | ALDH1A1 | |
| SCHEMBL8775992 | 0.80 | — | — | |
| SCHEMBL5467149 | 0.79 | — | — | |
| SCHEMBL5460507 | 0.79 | — | — | |
| SCHEMBL14066035 | 0.79 | — | — | |
| SCHEMBL8168512 | 0.79 | — | — | |
| SCHEMBL6479050 | 0.77 | — | — | |
| Hydrochloric Acid SCHEMBL9230413 | 0.77 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 431 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2024243002-A1 | LOW PRESSURE CHEMICAL VAPOR DEPOSITION OF SILICON OXIDE | LAM RESEARCH CORPORATION (US) | 2024-11-28 | — | — | WO | claimed |
| US-20240052490-A1 | MONOALKOXYSILANES AND DIALKOXYSILANES AND DENSE ORGANOSILICA FILMS MADE THEREFROM | VERSUM MATERIALS US, LLC (US) | 2024-02-15 | — | — | US | claimed |
| EP-4018015-A1 | MONOALKOXYSILANES AND DIALKOXYSILANES AND DENSE ORGANOSILICA FILMS MADE THEREFROM | Versum Materials US, LLC (US) | 2022-06-29 | — | — | EP | claimed |
| CN-114556527-A | Monoalkoxysilanes and dialkoxysilanes and dense organosilica films prepared therefrom | 弗萨姆材料美国有限责任公司 | 2022-05-27 | — | — | CN | claimed |
| US-10991571-B2 | High temperature atomic layer deposition of silicon oxide thin films | VERSUM MATERIALS US, LLC (US) | 2021-04-27 | — | — | US | claimed |
| WO-2021050798-A1 | MONOALKOXYSILANES AND DIALKOXYSILANES AND DENSE ORGANOSILICA FILMS MADE THEREFROM | VERSUM MATERIALS US, LLC (US) | 2021-03-18 | — | — | WO | claimed |
| US-20190189431-A1 | High Temperature Atomic Layer Deposition of Silicon Oxide Thin Films | VERSUM MATERIALS US, LLC (US) | 2019-06-20 | — | — | US | claimed |
| EP-2876099-B1 | Norbornadiene purification method | AIR LIQUIDE (FR) | 2017-11-15 | — | — | EP | claimed |
| US-20170256399-A9 | High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2017-09-07 | — | — | US | claimed |
| US-20160365244-A1 | High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2016-12-15 | — | — | US | claimed |
| EP-1619267-A2 | Method for removing carbon-containing residues from a substrate | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2006-01-25 | — | — | EP | claimed |
| EP-1561841-A2 | Cleaning CVD Chambers following deposition of porogen-containing materials | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2005-08-10 | — | — | EP | claimed |
| CN-1651159-A | Cleaning CVD chambers following deposition of porogen-containing materials | AIR PROD & CHEM (US) | 2005-08-10 | — | — | CN | claimed |
| US-20050161060-A1 | Cleaning CVD chambers following deposition of porogen-containing materials | AIR PRODUCTS AND CHEMICALS, INC. | 2005-07-28 | — | — | US | claimed |
| US-6846515-B2 | Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2005-01-25 | — | — | US | claimed |
| US-20040197474-A1 | Method for enhancing deposition rate of chemical vapor deposition films | VERSUM MATERIALS US, LLC | 2004-10-07 | — | — | US | claimed |
| EP-1464726-A2 | CVD method for forming a porous low dielectric constant SiOCH film | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2004-10-06 | — | — | EP | claimed |
| US-20030232137-A1 | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants | VERSUM MATERIALS US, LLC | 2003-12-18 | — | — | US | claimed |
| US-20030198742-A1 | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants | VERSUM MATERIALS US, LLC | 2003-10-23 | — | — | US | claimed |
| EP-1354980-A1 | Method for forming a porous SiOCH layer. | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2003-10-22 | — | — | EP | claimed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20190189431-A1 | High Temperature Atomic Layer Deposition of Silicon Oxide Thin Films | VIM, CDH1, ALDOA | ALDH1A1 633/4885TSHR 4770/4885TDP1 2942/4885 |
| US-10991571-B2 | High temperature atomic layer deposition of silicon oxide thin films | VIM, CDH1, ALDOA | ALDH1A1 633/4885TSHR 4770/4885TDP1 2942/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.