⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7575483 | 0.71 | — | — | |
| SCHEMBL2517685 | 0.59 | — | — | |
| SCHEMBL332801 | 0.59 | — | — | |
| SCHEMBL2808241 | 0.59 | — | — | |
| SCHEMBL4263157 | 0.56 | — | — | |
| SCHEMBL7573200 | 0.53 | — | — | |
| SCHEMBL6892 | 0.53 | — | — | |
| SCHEMBL20455819 | 0.53 | — | — | |
| SCHEMBL1741817 | 0.50 | — | — | |
| SCHEMBL15821843 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11584767-B2 | Method of making a halosiloxane | DDP SPECIALTY ELECTRONIC MATERIALS US 9 LLC (US) | 2023-02-21 | — | — | US | claimed |
| EP-3634969-B1 | METHOD OF MAKING A HALODISILOXANE | DDP SPECIALTY ELECTRONIC MAT US 9 LLC (US) | 2022-10-05 | — | — | EP | claimed |
| CN-112899648-A | High temperature atomic layer deposition of silicon-containing films | 弗萨姆材料美国有限责任公司 | 2021-06-04 | — | — | CN | claimed |
| CN-106992114-B | High temperature atomic layer deposition of silicon-containing films | 弗萨姆材料美国有限责任公司 | 2021-02-19 | — | — | CN | claimed |
| US-20200190123-A1 | METHOD OF MAKING A HALOSILOXANE | DDP SPECIALTY ELECTRONIC MATERIALS US 9 LLC | 2020-06-18 | — | — | US | claimed |
| US-20200095268-A1 | METHOD OF MAKING A HALOSILOXANE | DDP SPECIALTY ELECTRONIC MATERIALS US 9 LLC | 2020-03-26 | — | — | US | claimed |
| CN-110709404-A | Method for producing halogenated siloxanes | 美国陶氏有机硅公司 | 2020-01-17 | — | — | CN | claimed |
| CN-110621679-A | Method for producing halogenated siloxanes | 美国陶氏有机硅公司 | 2019-12-27 | — | — | CN | claimed |
| US-10283348-B2 | High temperature atomic layer deposition of silicon-containing films | VERSUM MATERIALS US, LLC (US) | 2019-05-07 | — | — | US | claimed |
| CN-106992114-A | High temperature atomic layer deposition of silicon-containing films | 弗萨姆材料美国有限责任公司 | 2017-07-28 | — | — | CN | claimed |
| EP-3196336-A1 | HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON-CONTAINING FILMS | Versum Materials US, LLC (US) | 2017-07-26 | — | — | EP | claimed |
| US-20170207082-A1 | High Temperature Atomic Layer Deposition of Silicon-Containing Films | VERSUM MATERIALS US, LLC (US) | 2017-07-20 | — | — | US | claimed |
| WO-2023082352-A1 | METHOD FOR PREPARING TRIPHENYLPHOSPHINE | 湖南经世新材料有限责任公司 | 2023-05-19 | — | — | WO | disclosed |
| US-11584767-B2 | Method of making a halosiloxane | DDP SPECIALTY ELECTRONIC MATERIALS US 9 LLC (US) | 2023-02-21 | — | — | US | disclosed |
| EP-3634969-B1 | METHOD OF MAKING A HALODISILOXANE | DDP SPECIALTY ELECTRONIC MAT US 9 LLC (US) | 2022-10-05 | — | — | EP | disclosed |
| CN-112899648-A | High temperature atomic layer deposition of silicon-containing films | 弗萨姆材料美国有限责任公司 | 2021-06-04 | — | — | CN | disclosed |
| US-20070032454-A1 | Silsesquioxane derivative and production process for the same | JNC CORPORATION (JP) | 2007-02-08 | — | — | US | disclosed |
| US-7169873-B2 | Silsesquioxane derivatives and process for production thereof | CHISSO CORPORATION (JP) | 2007-01-30 | — | — | US | disclosed |
| US-20040249103-A1 | Silsesquioxane derivatives and process for production thereof | JNC CORPORATION (JP) | 2004-12-09 | — | — | US | disclosed |
| EP-1428795-A1 | SILSESQUIOXANE DERIVATIVES AND PROCESS FOR PRODUCTION THEREOF | CHISSO CORPORATION (JP) | 2004-06-16 | — | — | EP | disclosed |