SCHEMBL426716

SCHEMBL426716

CCCO[Si](CC[Si](OCCC)(OCCC)OCCC)(OCCC)OCCC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23521382 0.91
SCHEMBL5670661 0.91
SCHEMBL107663 0.90
SCHEMBL4084291 0.89 ADRB2 (0.38)
SCHEMBL30892624 0.89
SCHEMBL431790 0.88 LMNA (0.31)
SCHEMBL702188 0.88 LMNA (0.31)
Ammonia Solution, Strong SCHEMBL820690 0.88
SCHEMBL976556 0.87
SCHEMBL30892630 0.87

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 175 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9096778-B2 Cyanoacrylate adhesive with improved water resistance Henkel IP & Holding GmbH (DE) 2015-08-04 US claimed
EP-2511355-B1 Cyanoacrylate adhesive with improved water resistance HENKEL IRELAND LTD (DE) 2013-10-23 EP claimed
US-20130174981-A1 CYANOACRYLATE ADHESIVE WITH IMPROVED WATER RESISTANCE HENKEL IRELAND LIMITED (DE) 2013-07-11 US claimed
EP-2511355-A1 Cyanoacrylate adhesive with improved water resistance Henkel Ireland Ltd. (IE) 2012-10-17 EP claimed
EP-1520891-B1 FILM FORMING COMPOSITION, PROCESS FOR PRODUCING FILM FORMING COMPOSITION, INSULATING FILM FORMING MATERIAL, PROCESS FOR FORMING FILM, AND SILICA-BASED FILM JSR CORP (JP) 2019-05-01 EP disclosed
US-10025188-B2 Resist pattern-forming method JSR CORPORATION (JP) 2018-07-17 US disclosed
US-20170322492-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-11-09 US disclosed
US-9512034-B2 Hydrophilic film MITSUI CHEMICALS, INC. (JP) 2016-12-06 US disclosed
US-20160320705-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-11-03 US disclosed
US-9434609-B2 Method for forming pattern, and polysiloxane composition JSR CORPORATION (JP) 2016-09-06 US disclosed
US-9329478-B2 Polysiloxane composition and pattern-forming method JSR CORPORATION (JP) 2016-05-03 US disclosed
US-20160097978-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-04-07 US disclosed
US-20020020327-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2002-02-21 US disclosed
US-20010055892-A1 Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2001-12-27 US disclosed
US-20010051446-A1 Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film JSR CORPORATION (JP) 2001-12-13 US disclosed
EP-1160848-A2 Composition for silica-based film formation JSR Corporation (JP) 2001-12-05 EP disclosed
EP-1148105-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-10-24 EP disclosed
EP-1146092-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-10-17 EP disclosed
EP-1127929-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-08-29 EP disclosed
EP-1090967-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-11 EP disclosed