SCHEMBL4359161

SCHEMBL4359161

CC(C)n1ncc(Cl)c1N

nearest known ligand 0.35

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
BPTF Q12830 1/20 0.34
DRD4 P21917 1/20 0.33
HTR2A P28223 2/20 0.32
HTR2C P28335 2/20 0.32
ABL1 P00519 1/20 0.31
SRC P12931 1/20 0.31
CYP1A2 P05177 1/20 0.31
POLB P06746 1/20 0.31
CYP2C19 P33261 1/20 0.31
NPBWR1 P48145 1/20 0.31
MCHR1 Q99705 1/20 0.31
PDE9A O76083 1/20 0.30
RET P07949 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4347184 0.77 DRD4 (0.35) BPTFDRD4HTR2AHTR2CCYP1A2
SCHEMBL144678 0.77 PIK3CD (0.30) ABL1SRC
SCHEMBL691173 0.76 TSHR (0.39) DRD4PDE9A
SCHEMBL4360057 0.76 CYP1A2 (0.35) BPTFDRD4CYP1A2POLBCYP2C19
SCHEMBL23234657 0.74 KDM4E (0.32)
SCHEMBL28684793 0.74 DRD4 (0.33) BPTFDRD4HTR2AHTR2CCYP1A2
SCHEMBL15077061 0.74 DRD4 (0.33) BPTFDRD4CYP1A2POLBCYP2C19
SCHEMBL25594135 0.74 DRD4 (0.33) BPTFDRD4CYP1A2POLBCYP2C19
SCHEMBL9930351 0.74 BPTF (0.34) BPTFDRD4CYP1A2POLBCYP2C19
SCHEMBL4350889 0.74 ACLY (0.34) BPTFDRD4ABL1SRCCYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119384474-A Liquid composition and optical film 日本瑞翁株式会社 2025-01-28 CN disclosed
CN-119053889-A Multilayer film, method for producing same, polarizing plate, and organic electroluminescent image display device 日本瑞翁株式会社 2024-11-29 CN disclosed
CN-117957114-A Multilayer film, optical multilayer film, and method for producing same 日本瑞翁株式会社 2024-04-30 CN disclosed
WO-2024024467-A1 LIQUID COMPOSITION AND OPTICAL FILM 日本ゼオン株式会社 2024-02-01 WO disclosed
WO-2023233958-A1 MULTILAYER FILM AND METHOD FOR MANUFACTURING SAME, POLARIZING PLATE, AND ORGANIC ELECTROLUMINESCENT IMAGE DISPLAY DEVICE 日本ゼオン株式会社 2023-12-07 WO disclosed
CN-111443415-B Polarizing plate 住友化学株式会社 2023-08-01 CN disclosed
WO-2023054256-A1 MULTILAYER FILM, OPTICAL MULTILAYER FILM, AND MANUFACTURING METHOD 日本ゼオン株式会社 2023-04-06 WO disclosed
CN-110229366-B Multilayer film and method for producing same 日本瑞翁株式会社 2022-05-06 CN disclosed
EP-3088181-B1 MULTILAYERED FILM AND METHOD FOR MANUFACTURING SAME ZEON CORP (JP) 2018-09-05 EP disclosed
EP-3088181-A1 MULTILAYERED FILM AND METHOD FOR MANUFACTURING SAME Zeon Corporation (JP) 2016-11-02 EP disclosed
US-20160312076-A1 MULTILAYERED FILM AND METHOD FOR MANUFACTURING THE SAME ZEON CORPORATION (JP) 2016-10-27 US disclosed
CN-105934335-A Multilayer film and method for producing same 日本瑞翁株式会社 2016-09-07 CN disclosed
US-7614145-B2 Method for manufacturing multilayer circuit board and resin base material ZEON CORPORATION (JP) 2009-11-10 US disclosed
CN-100496195-C Mulitilayer circuit board, resin base material, and its production method ZEON CORP (JP) 2009-06-03 CN disclosed
US-20080217617-A1 Thin Film Transistor, Wiring Board and Methods of Manufacturing the Same ZEON CORPORATION (JP) 2008-09-11 US disclosed
CN-100383278-C Partial plating method, partially-plated resin base, method for manufacturing multilayer circuit board ZEON CORP (JP) 2008-04-23 CN disclosed
US-20050153059-A1 Partial plating method, partially-plated resin base, method for manufacturing multilayered circuit board ZEON CORPORATION (JP) 2005-07-14 US disclosed
CN-1639384-A Partial plating method, partially-plated resin base, method for manufacturing multilayer circuit board ZEON CORP (JP) 2005-07-13 CN disclosed
US-20040237295-A1 Multilayer circuit board and resin base material, and its production method ZEON CORPORATION (JP) 2004-12-02 US disclosed
CN-1552174-A Mulitilayer circuit board, resin base material, and its production method �ձ�������ʽ���� 2004-12-01 CN disclosed