SCHEMBL4381658

SCHEMBL4381658

c1cc(OC2CCCCO2)ccc1Cc1ccc(OC2CCCCO2)cc1

nearest known ligand 0.55

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
DHFR P00374 1/20 0.45
TNK2 Q07912 3/20 0.42
MEN1 O00255 1/20 0.42
KMT2A Q03164 1/20 0.42
HRH1 P35367 1/20 0.41
KDM4C Q9H3R0 1/20 0.38
NPC1 O15118 1/20 0.37
RAB9A P51151 1/20 0.37
HSD11B1 P28845 1/20 0.37
LTA4H P09960 4/20 0.36
ALDH1A1 P00352 1/20 0.36
TSHR P16473 1/20 0.36
ACP1 P24666 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4381881 0.95 HRH1 (0.41) DHFRTNK2MEN1KMT2AHRH1
SCHEMBL14949944 0.91 DHFR (0.41) DHFRTNK2MEN1KMT2AHRH1
SCHEMBL3500438 0.89 TNK2 (0.44) DHFRTNK2MEN1KMT2AKDM4C
SCHEMBL7774639 0.87 DDB1 (0.41) DHFRTNK2MEN1KMT2AKDM4C
SCHEMBL883393 0.87 DHFR (0.41) DHFRTNK2MEN1KMT2AKDM4C
SCHEMBL3139148 0.87 DHFR (0.46) DHFRTNK2MEN1KMT2AKDM4C
SCHEMBL5702480 0.87 DDB1 (0.41) DHFRTNK2MEN1KMT2AKDM4C
SCHEMBL862862 0.87 MEN1 (0.43) DHFRTNK2MEN1KMT2AKDM4C
SCHEMBL3394710 0.85 MEN1 (0.42) DHFRTNK2MEN1KMT2AKDM4C
SCHEMBL24041815 0.84 DHFR (0.40) DHFRTNK2MEN1KMT2AKDM4C

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1308782-B1 Chemically amplified positive resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2012-09-05 EP claimed
EP-1378795-B1 Resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2012-08-29 EP disclosed
US-20090075482-A1 PROCESS FOR FORMING A PATTERN INCLUDING ON A SEMICONDUCTOR DEVICE NEC ELECTRONICS CORPORATION (JP) 2009-03-19 US disclosed
US-7479361-B2 Chemically amplified resist composition, process for manufacturing semiconductor device and patterning process NEC ELECTRONICS CORPORATION (JP) 2009-01-20 US disclosed
US-6869748-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-03-22 US disclosed
US-20040259373-A1 Chemically amplified resist composition, process for manufacturing semiconductor device and patterning process NEC ELECTRONICS CORPORATION (JP) 2004-12-23 US disclosed
US-20040023153-A1 Resist compostion and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-02-05 US disclosed
EP-1378795-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-01-07 EP disclosed
US-20020115018-A1 Amine compounds, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-22 US disclosed