SCHEMBL4389734

SCHEMBL4389734

Cc1ccc(S(=O)(=O)OSC2CCCCC2=O)cc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 6/20 0.40
CYP3A4 P08684 2/20 0.40
TSHR P16473 1/20 0.40
ENPP3 O14638 2/20 0.39
ENPP1 P22413 2/20 0.39
ENPP2 Q13822 2/20 0.39
CYP2D6 P10635 3/20 0.38
MAPT P10636 3/20 0.38
TP53 P04637 2/20 0.38
LMNA P02545 1/20 0.38
ATM Q13315 1/20 0.38
SMN1; SMN2 Q16637 1/20 0.38
CYP1A2 P05177 1/20 0.38
NPC1 O15118 1/20 0.37
GAA P10253 1/20 0.37
RAB9A P51151 1/20 0.37
ACHE P22303 1/20 0.37
CYP2C9 P11712 1/20 0.37
CYP2C19 P33261 1/20 0.37
NPSR1 Q6W5P4 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3880044 0.85 MAPT (0.53) ALDH1A1TSHRENPP3ENPP1ENPP2
SCHEMBL2632449 0.78 CYP2D6 (0.47) ALDH1A1CYP3A4TSHRENPP3ENPP1
SCHEMBL10809927 0.78 CYP2D6 (0.47) ALDH1A1CYP3A4TSHRENPP3ENPP1
SCHEMBL12204577 0.78 CYP2D6 (0.47) ALDH1A1CYP3A4TSHRENPP3ENPP1
Hydrogen Sulfide SCHEMBL3623091 0.77 CYP2D6 (0.46) ALDH1A1CYP3A4TSHRENPP3ENPP1
SCHEMBL10810981 0.77 CYP2D6 (0.46) ALDH1A1CYP3A4TSHRENPP3ENPP1
SCHEMBL10814260 0.73 CYP2D6 (0.48) ALDH1A1CYP3A4TSHRENPP3ENPP1
SCHEMBL3871402 0.72 CA1 (0.32) ALDH1A1MAPTSMN1; SMN2NPC1RAB9A
SCHEMBL29520443 0.70 ALDH1A1 (0.40) ALDH1A1CYP3A4TSHRCYP2D6MAPT
SCHEMBL6725040 0.70 MAPT (0.43) ALDH1A1CYP3A4TSHRENPP3ENPP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7629106-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-12-08 US disclosed
US-20070141510-A1 NANOCOMPOSITE PHOTOSENSITIVE COMPOSITION AND USE THEREOF CHEN CHUNWEI 2007-06-21 US disclosed
US-7232641-B2 Polymerizable compound, polymer, positive-resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-06-19 US disclosed
US-20070111140-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-17 US disclosed
US-6673511-B1 PHOTORESISTS COMPRISING TERTIARY AMINES, SOLVENTS, ACID GENERATORS AND ADDITION POLYMERS HAVING ACID-LABILE GROUPS USED FOR LITHOGRAPHY AND HAVING HIGH SENSITIVITY, RESOLUTION AND CORROSION RESISTANCE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-01-06 US disclosed