SCHEMBL29520443

SCHEMBL29520443

Cc1ccc(S(=O)(=O)O)cc1.O=C1CCCCC1SCC1CCCCC1

nearest known ligand 0.40

Known targets — ChEMBL curated mechanism

ABL1BMXBRAFBTKCHRNA4CHRNB2CSNK1EEGFRERBB2F10FLT1FLT3FLT4IGF1RINSRITKJAK3KDRKITOPRM1PARP1PARP2PDGFRBPIK3CDRAF1RETSLC18A2TECTXKdacAdacBdacCftsImrcAmrcBmrdArplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 7/20 0.40
NPC1 O15118 2/20 0.38
RAB9A P51151 2/20 0.38
GAA P10253 2/20 0.38
CYP2D6 P10635 1/20 0.38
CYP3A4 P08684 1/20 0.37
TSHR P16473 1/20 0.37
CNR1 P21554 1/20 0.36
CNR2 P34972 1/20 0.36
ADORA3 P0DMS8 1/20 0.36
KCNH2 Q12809 1/20 0.35
KMT2A Q03164 1/20 0.35
EPHX2 P34913 1/20 0.35
PSEN1 P49768 1/20 0.35
PSEN2 P49810 1/20 0.35
APH1B Q8WW43 1/20 0.35
NCSTN Q92542 1/20 0.35
APH1A Q96BI3 1/20 0.35
PSENEN Q9NZ42 1/20 0.35
POLB P06746 2/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL244367 0.79 KMT2A (0.41) ALDH1A1NPC1RAB9AGAACYP3A4
Trifluoromethanesulfonic Acid SCHEMBL7082064 0.77 KMT2A (0.31) ALDH1A1KMT2AMAPT
SCHEMBL7682726 0.75 ALDH1A1 (0.47) ALDH1A1NPC1RAB9AGAACYP2D6
SCHEMBL1553778 0.75 ALDH1A1 (0.47) ALDH1A1NPC1RAB9AGAACYP2D6
SCHEMBL5561314 0.75 ALDH1A1 (0.47) ALDH1A1NPC1RAB9AGAACYP2D6
SCHEMBL2799786 0.74 ALDH1A1 (0.46) ALDH1A1NPC1RAB9AGAACYP2D6
SCHEMBL5566428 0.73 CYP2D6 (0.48) ALDH1A1NPC1RAB9AGAACYP2D6
SCHEMBL3965098 0.73 ALDH1A1 (0.41) ALDH1A1NPC1RAB9AGAACYP2D6
Phosphine SCHEMBL28194487 0.72 GAA (0.52) ALDH1A1GAACYP2D6CYP3A4TSHR
Cyclohexanone SCHEMBL669721 0.71 ALDH1A1 (0.45) ALDH1A1GAACYP2D6CYP3A4KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260146026-A1 COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT ADEKA CORPORATION (JP) 2026-05-28 US disclosed
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-08 US disclosed
CN-120202438-A Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film, pattern forming method and light emitting element 信越化学工业株式会社 2025-06-24 CN disclosed
CN-120092212-A Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film, pattern forming method and light emitting element 信越化学工业株式会社 2025-06-03 CN disclosed
CN-120019329-A Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film, pattern forming method and light emitting element 信越化学工业株式会社 2025-05-16 CN disclosed
CN-119987132-A Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film and pattern forming method 信越化学工业株式会社 2025-05-13 CN disclosed
CN-119955091-A Polymer, positive-type negative-type photosensitive resin composition, pattern forming method, cured film forming method, interlayer insulating film, surface protective film, and electronic component 信越化学工业株式会社 2025-05-09 CN disclosed
EP-4508493-A1 PHOTOLITHOGRAPHIC METHOD USING SILICON PHOTORESIST Suntific Materials (Weifang), Ltd. (CN) 2025-02-19 EP disclosed
EP-4508495-A1 MANUFACTURE OF INTEGRATED CIRUIT USING POSITIVE TONE PHOTOPATTERNABLE DIELECTRIC INCLUDING HIGH SILICON CONTENT POLYSILSESQUIOXANE Suntific Materials (Weifang), Ltd. (CN) 2025-02-19 EP disclosed
CN-119439625-A Negative photosensitive resin composition, pattern forming method, cured coating film forming method, interlayer insulating film, surface protective film, and electronic component 信越化学工业株式会社 2025-02-14 CN disclosed
CN-111381447-B Photosensitive resin composition, laminate, and pattern forming method 信越化学工业株式会社 2024-03-08 CN disclosed
CN-111234236-B Siloxane polymer containing isocyanuric acid and polyether skeleton, photosensitive resin composition, and pattern formation method 信越化学工业株式会社 2023-03-24 CN disclosed
CN-111205463-B Polysiloxane skeleton polymer, photosensitive resin composition, pattern forming method and manufacturing of optical semiconductor device 信越化学工业株式会社 2023-02-14 CN disclosed
CN-108388082-B Photosensitive resin composition, photosensitive dry film, photosensitive resin coating and pattern forming method 信越化学工业株式会社(JP) 2023-01-13 CN disclosed
CN-115044040-A Polyimide-containing polymer, positive photosensitive resin composition, negative photosensitive resin composition, and pattern formation method 信越化学工业株式会社 2022-09-13 CN disclosed
CN-115023653-A Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film, and pattern formation method 信越化学工业株式会社 2022-09-06 CN disclosed
CN-114746809-A Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film, pattern forming method, and light-emitting element 信越化学工业株式会社 2022-07-12 CN disclosed
WO-2022131346-A1 COMPOUND AND COMPOSITION 株式会社ADEKA 2022-06-23 WO disclosed
CN-109422881-B Epoxy group-containing isocyanurate-modified silicone resin, photosensitive resin composition, photosensitive dry film, laminate, and pattern formation method 信越化学工业株式会社 2022-04-19 CN disclosed
CN-114253069-A Photosensitive resin composition, pattern forming method, cured film forming method, interlayer insulating film, and surface protective film 信越化学工业株式会社 2022-03-29 CN disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS ASH2L, ALKBH2, ITGA1 ALDH1A1 841/4885NPC1 4479/4885RAB9A 2955/4885
US-20260146026-A1 COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT CBR3, CBR1, NOTUM ALDH1A1 827/4885NPC1 2346/4885RAB9A 3875/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.