Predicted protein targets (top 18)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NPC1 | O15118 | 3/20 | 0.38 |
| ▸ | RAB9A | P51151 | 3/20 | 0.38 |
| ▸ | MAPT | P10636 | 1/20 | 0.38 |
| ▸ | LMNA | P02545 | 1/20 | 0.33 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.33 |
| ▸ | CASP3 | P42574 | 1/20 | 0.33 |
| ▸ | ATM | Q13315 | 1/20 | 0.33 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.33 |
| ▸ | SENP8 | Q96LD8 | 1/20 | 0.33 |
| ▸ | SENP7 | Q9BQF6 | 1/20 | 0.33 |
| ▸ | SENP6 | Q9GZR1 | 1/20 | 0.33 |
| ▸ | CA1 | P00915 | 2/20 | 0.31 |
| ▸ | CA2 | P00918 | 2/20 | 0.31 |
| ▸ | POLB | P06746 | 1/20 | 0.31 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.31 |
| ▸ | HDAC11 | Q96DB2 | 1/20 | 0.30 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.30 |
| ▸ | HDAC6 | Q9UBN7 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL503801 | 0.85 | HDAC11 (0.37) | NPC1RAB9AMAPTLMNAMAPK1 | |
| SCHEMBL5412257 | 0.82 | HSD11B1 (0.38) | NPC1RAB9AMAPTLMNAMAPK1 | |
| SCHEMBL5416235 | 0.81 | NPC1 (0.38) | NPC1RAB9AMAPTLMNAMAPK1 | |
| SCHEMBL1803566 | 0.81 | CA1 (0.38) | CA1CA2CYP2C9HDAC6 | |
| SCHEMBL5409951 | 0.80 | CA2 (0.40) | MAPTLMNASMN1; SMN2CA1CA2 | |
| SCHEMBL5412565 | 0.80 | NPC1 (0.37) | NPC1RAB9AMAPTLMNAMAPK1 | |
| SCHEMBL5398691 | 0.79 | NPC1 (0.35) | NPC1RAB9AMAPTLMNAMAPK1 | |
| SCHEMBL5410042 | 0.78 | NPC1 (0.35) | NPC1RAB9AMAPTLMNAMAPK1 | |
| SCHEMBL3753449 | 0.78 | NPC1 (0.38) | NPC1RAB9AMAPTLMNAMAPK1 | |
| SCHEMBL4868311 | 0.78 | NPC1 (0.38) | NPC1RAB9AMAPTLMNAMAPK1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2477073-A1 | Resist composition for electron beam, EUV or X-ray | Fujifilm Corporation (JP) | 2012-07-18 | — | — | EP | disclosed |
| US-7521168-B2 | Compound that has a reduction potential higher than that of diphenyl iodonium salt and generates an acid upon irradiation of an actinic ray or radiation. | FUJIFILM CORPORATION (JP) | 2009-04-21 | — | — | US | disclosed |
| US-7312014-B2 | Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray | WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) | 2007-12-25 | — | — | US | disclosed |
| US-7214465-B2 | Positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2007-05-08 | — | — | US | disclosed |
| US-6887647-B2 | Negative-working resist composition for electron beams or x-rays | FUJI PHOTO FILM CO., LTD. (JP) | 2005-05-03 | — | — | US | disclosed |
| US-20040170918-A1 | Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray | WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) | 2004-09-02 | — | — | US | disclosed |
| EP-1406123-A1 | RESIST COMPOSITIONS | Wako Pure Chemical Industries, Ltd. (JP) | 2004-04-07 | — | — | EP | disclosed |
| US-20030224285-A1 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. | 2003-12-04 | — | — | US | disclosed |
| US-20030198894-A1 | Resist composition for electron beam, EUV or X-ray | FUJI PHOTO FILM CO., LTD. | 2003-10-23 | — | — | US | disclosed |
| EP-1338921-A2 | Resist composition for electron beam, X-ray or EUV | Fuji Photo Film Co., Ltd. (JP) | 2003-08-27 | — | — | EP | disclosed |
| US-20030054287-A1 | Resist composition | FUJI PHOTO FILM CO., LTD. | 2003-03-20 | — | — | US | disclosed |
| US-20020192592-A1 | Negative-working resist composition for electron beams or X-rays | FUJI PHOTO FILM CO., LTD. | 2002-12-19 | — | — | US | disclosed |
| US-20020058206-A1 | Positive resist composition | FUJI PHOTO FILM CO., LTD. | 2002-05-16 | — | — | US | disclosed |
| EP-1193556-A1 | Positive resist composition | Fuji Photo Film Co., Ltd. (JP) | 2002-04-03 | — | — | EP | disclosed |