SCHEMBL4401677

SCHEMBL4401677

C=C(C)C(=O)OC1(C(C)C)CCC(CC)CC1

nearest known ligand 0.35

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.35
ALDH1A1 P00352 1/20 0.32
POLB P06746 1/20 0.31
THRB P10828 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5918124 0.89 TSHR (0.36) TSHRALDH1A1
SCHEMBL4401703 0.83 TSHR (0.34) TSHRALDH1A1
SCHEMBL674145 0.82 TSHR (0.41) TSHRALDH1A1THRB
SCHEMBL20382219 0.80 ALDH1A1 (0.34) TSHRALDH1A1
SCHEMBL13713822 0.80 ALDH1A1 (0.34) TSHRALDH1A1POLBTHRB
SCHEMBL4406127 0.79 TSHR (0.35) TSHRALDH1A1
SCHEMBL47304 0.79 TSHR (0.38) TSHRALDH1A1
SCHEMBL14519267 0.78 ALDH1A1 (0.33) TSHRALDH1A1POLBTHRB
SCHEMBL4401694 0.77 TSHR (0.32) TSHRALDH1A1
SCHEMBL685726 0.77 TSHR (0.37) TSHRALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8298746-B2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-10-30 US disclosed
US-8298746-B2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-10-30 US disclosed
US-8173352-B2 Resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-05-08 US disclosed
US-8173352-B2 Resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-05-08 US disclosed
US-8003296-B2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-08-23 US disclosed
US-8003296-B2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-08-23 US disclosed
US-20100167199-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-07-01 US disclosed
US-20100151380-A1 RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-06-17 US disclosed
US-20100151380-A1 RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-06-17 US disclosed
US-20100136481-A1 RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-06-03 US disclosed
US-7575850-B2 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-08-18 US disclosed
US-7575850-B2 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-08-18 US disclosed
US-7566522-B2 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-07-28 US disclosed
US-7566522-B2 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-07-28 US disclosed
US-20080193874-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-08-14 US disclosed
US-20080193874-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-08-14 US disclosed
US-20080166660-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-10 US disclosed
US-20080166660-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-10 US disclosed
US-7205090-B2 Chemical amplification type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-04-17 US disclosed
US-7205090-B2 Chemical amplification type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-04-17 US disclosed