Predicted protein targets (top 13)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA2 | P00918 | 6/20 | 0.41 |
| ▸ | CA1 | P00915 | 5/20 | 0.32 |
| ▸ | MMP1 | P03956 | 2/20 | 0.32 |
| ▸ | MMP2 | P08253 | 2/20 | 0.32 |
| ▸ | MMP9 | P14780 | 2/20 | 0.32 |
| ▸ | MMP8 | P22894 | 2/20 | 0.32 |
| ▸ | MMP13 | P45452 | 2/20 | 0.32 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.32 |
| ▸ | GAA | P10253 | 1/20 | 0.31 |
| ▸ | F2 | P00734 | 1/20 | 0.30 |
| ▸ | PRSS1 | P07477 | 1/20 | 0.30 |
| ▸ | PRSS2 | P07478 | 1/20 | 0.30 |
| ▸ | PRSS3 | P35030 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL27783260 | 0.85 | CA2 (0.36) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL29590174 | 0.77 | NPSR1 (0.38) | NPSR1 | |
| SCHEMBL25713949 | 0.72 | — | — | |
| SCHEMBL19042242 | 0.72 | CA2 (0.44) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL28095611 | 0.71 | KDM4E (0.34) | — | |
| SCHEMBL31005120 | 0.70 | NPSR1 (0.36) | NPSR1 | |
| SCHEMBL444398 | 0.69 | CA2 (0.41) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL3822751 | 0.69 | GLA (0.35) | CA2MMP2MMP9NPSR1 | |
| SCHEMBL31582662 | 0.68 | — | — | |
| SCHEMBL19042233 | 0.67 | ALDH1A1 (0.41) | CA2CA1MMP1MMP2MMP9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12300490-B2 | Method of manufacturing integrated circuit device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-05-13 | — | — | US | disclosed |
| CN-109559980-B | Method of manufacturing integrated circuit device | 三星电子株式会社 | 2024-02-23 | — | — | CN | disclosed |
| US-20220181146-A1 | METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2022-06-09 | — | — | US | disclosed |
| US-11069580-B2 | Method of manufacturing a semiconductor device including a plurality of channel patterns | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2021-07-20 | — | — | US | disclosed |
| US-20210013110-A1 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING A PLURALITY OF CHANNEL PATTERNS | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2021-01-14 | — | — | US | disclosed |
| US-10732506-B2 | Method of fabricating integrated circuit devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2020-08-04 | — | — | US | disclosed |
| US-20190096662-A1 | METHOD OF FABRICATING INTEGRATED CIRCUIT DEVICES | SAMSUNG ELECTRONICS CO., LTD (KR) | 2019-03-28 | — | — | US | disclosed |
| US-10134606-B2 | Method of forming patterns and method of manufacturing integrated circuit device using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2018-11-20 | — | — | US | disclosed |
| US-9773672-B2 | Method of forming micropatterns | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2017-09-26 | — | — | US | disclosed |
| US-9613821-B2 | Method of forming patterns and method of manufacturing integrated circuit device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2017-04-04 | — | — | US | disclosed |
| US-20140004705-A1 | METHOD OF FORMING FINE PATTERNS OF SEMICONDUCTOR DEVICE BY USING DOUBLE PATTERNING PROCESS WHICH USES ACID DIFFUSION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2014-01-02 | — | — | US | disclosed |
| US-8431331-B2 | Method of forming fine patterns of semiconductor device by using double patterning process which uses acid diffusion | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-04-30 | — | — | US | disclosed |
| CN-101572226-B | Method of forming fine patterns of semiconductor device | SAMSUNG ELECTRONICS CO LTD | 2013-04-24 | — | — | CN | disclosed |
| US-20120064724-A1 | Methods of Forming a Pattern of Semiconductor Devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-03-15 | — | — | US | disclosed |
| US-20120064463-A1 | Method of Forming Micropatterns | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-03-15 | — | — | US | disclosed |
| CN-102347216-A | Method of manufacturing semiconductor device using acid diffusion | SAMSUNG ELECTRONICS CO LTD | 2012-02-08 | — | — | CN | disclosed |
| US-20120028434-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING ACID DIFFUSION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-02-02 | — | — | US | disclosed |
| US-20110244689-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-10-06 | — | — | US | disclosed |
| US-20090274980-A1 | METHOD OF FORMING FINE PATTERNS OF SEMICONDUCTOR DEVICE BY USING DOUBLE PATTERNING PROCESS WHICH USES ACID DIFFUSION | SAMSUNG ELECTRONICS CO., LTD. | 2009-11-05 | — | — | US | disclosed |
| CN-101572226-A | Method of forming fine patterns of semiconductor device | SAMSUNG ELECTRONICS CO LTD (KR) | 2009-11-04 | — | — | CN | disclosed |