⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3162177 | 1.00 | — | — | |
| SCHEMBL1706033 | 0.87 | — | — | |
| SCHEMBL17765303 | 0.87 | — | — | |
| SCHEMBL245696 | 0.82 | — | — | |
| SCHEMBL15991 | 0.82 | — | — | |
| SCHEMBL4623005 | 0.82 | — | — | |
| SCHEMBL15392937 | 0.67 | — | — | |
| SCHEMBL3290231 | 0.67 | — | — | |
| SCHEMBL17458658 | 0.67 | — | — | |
| SCHEMBL14958359 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 131 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240048166-A1 | REINFORCEMENT LEARNING RECEIVER FRONT-END | QORVO US, INC. | 2024-02-08 | — | — | US | claimed |
| CN-116397331-A | Porous structure and preparation method thereof | 东莞市中镓半导体科技有限公司 | 2023-07-07 | — | — | CN | claimed |
| CN-111261755-B | LED epitaxial growth method | 湘能华磊光电股份有限公司 | 2021-06-01 | — | — | CN | claimed |
| CN-112436821-A | Radio frequency filter and manufacturing method thereof | 迈感微电子(上海)有限公司 | 2021-03-02 | — | — | CN | claimed |
| CN-111261755-A | LED epitaxial growth method | 湘能华磊光电股份有限公司 | 2020-06-09 | — | — | CN | claimed |
| CN-109285762-A | A kind of epitaxy of gallium nitride silicon chip edge processing technology | 中国电子科技集团公司第四十六研究所 | 2019-01-29 | — | — | CN | claimed |
| CN-104835891-B | Flip LED chips and preparation method thereof | 杭州士兰明芯科技有限公司 | 2018-06-26 | — | — | CN | claimed |
| CN-105244421-B | Light emitting diode construction and preparation method thereof | 厦门市三安光电科技有限公司 | 2017-10-27 | — | — | CN | claimed |
| CN-103887379-B | Method for reducing GaN epitaxial defects through wet etching | 西安神光皓瑞光电科技有限公司 | 2017-04-19 | — | — | CN | claimed |
| CN-103872190-B | Method for reducing epitaxy defect of GaN (gallium nitride) through wet etching | 西安神光皓瑞光电科技有限公司 | 2017-04-19 | — | — | CN | claimed |
| CN-103887379-A | Method for reducing GaN epitaxial defects through wet etching | XI AN SHENGUANG HAORUI PHOTOELECTRIC SCIENCE & TECHNOLOGY CO LTD | 2014-06-25 | — | — | CN | claimed |
| CN-103872190-A | Method for reducing epitaxy defect of GaN (gallium nitride) through wet etching | XI AN SHENGUANG HAORUI PHOTOELECTRIC SCIENCE & TECHNOLOGY CO LTD | 2014-06-18 | — | — | CN | claimed |
| US-8558242-B2 | Vertical GaN-based metal insulator semiconductor FET | AVOGY, INC. (US) | 2013-10-15 | — | — | US | claimed |
| CN-102064256-B | GaN blue light LED device using 3C-SiC-Si as substrate | HAN JISHENG | 2013-08-14 | — | — | CN | claimed |
| US-20130146885-A1 | Vertical GaN-Based Metal Insulator Semiconductor FET | EPOWERSOFT, INC. (US) | 2013-06-13 | — | — | US | claimed |
| CN-202523716-U | Lanthanide oxide gate oxide shallow trench structure | UNIV DALIAN TECH | 2012-11-07 | — | — | CN | claimed |
| CN-102064256-A | GaN blue light LED device with 3C-SiC-Si as substrate | JISHENG HAN | 2011-05-18 | — | — | CN | claimed |
| US-6759688-B2 | Monolithic surface mount optoelectronic device and method for fabricating the device | MICROSEMI MICROWAVE PRODUCTS, INC. | 2004-07-06 | — | — | US | claimed |
| US-20030094605-A1 | Monolithic surface mount optoelectronic device and method for fabricating the device | MICROSEMI SOC CORP., A CALIFORNIA CORPORATION | 2003-05-22 | — | — | US | claimed |
| CN-1316782-A | Nitride semiconductor device | SEMICONDUCTOR INST CN ACAD (CN) | 2001-10-10 | — | — | CN | claimed |