SCHEMBL4454151

SCHEMBL4454151

Cc1ccc(Oc2ccccc2)cc1C

nearest known ligand 0.62

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 5/20 0.55
TSHR P16473 1/20 0.55
KMT2A Q03164 2/20 0.53
L3MBTL1 Q9Y468 2/20 0.53
LMNA P02545 1/20 0.53
GFER P55789 1/20 0.53
SMN1; SMN2 Q16637 2/20 0.51
MEN1 O00255 1/20 0.51
MAPT P10636 1/20 0.51
HPGD P15428 1/20 0.51
DRD2 P14416 1/20 0.50
DRD4 P21917 1/20 0.50
DRD3 P35462 1/20 0.50
HTR2A P28223 1/20 0.50
SLC6A4 P31645 1/20 0.50
MAOB P27338 1/20 0.48
NR1H2 P55055 1/20 0.48
BAX Q07812 1/20 0.48
MAOA P21397 1/20 0.48
TDP1 Q9NUW8 2/20 0.47

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30358264 1.00 LTA4H (0.55) LTA4HTSHRKMT2AL3MBTL1LMNA
SCHEMBL10007534 1.00 LTA4H (0.55) LTA4HTSHRKMT2AL3MBTL1LMNA
SCHEMBL47864 0.91 KMT2A (0.60) KMT2AL3MBTL1LMNAGFERSMN1; SMN2
SCHEMBL10993100 0.91 KMT2A (0.60) KMT2AL3MBTL1LMNAGFERSMN1; SMN2
SCHEMBL30587868 0.88 KMT2A (0.52) KMT2AL3MBTL1LMNAGFERSMN1; SMN2
SCHEMBL9455443 0.88 KMT2A (0.52) KMT2AL3MBTL1LMNAGFERSMN1; SMN2
SCHEMBL47874 0.88 KMT2A (0.57) KMT2AL3MBTL1LMNAGFERSMN1; SMN2
SCHEMBL29215403 0.87 LTA4H (0.52) LTA4HKMT2AL3MBTL1LMNAGFER
SCHEMBL16604045 0.87 KMT2A (0.44) LTA4HTSHRKMT2AL3MBTL1LMNA
SCHEMBL12792088 0.85 ALDH1A1 (0.67) KMT2AL3MBTL1LMNAGFERSMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 96 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116925498-A High-pressure-bearing branched epoxy resin plugging material and oil-based drilling fluid 西南石油大学 2023-10-24 CN claimed
CN-111234218-A Preparation method of soluble polyimide containing amino phenylsulfonyl hexafluoropropane structure 桂林理工大学 2020-06-05 CN claimed
CN-101607923-A Aromatic nitrile compounds or derivatives thereof and synthetic method thereof and application NING JIAO (CN) 2009-12-23 CN claimed
JP-61205232-A None JP disclosed
US-20240410055-A1 METHOD AND FORMULATION FOR PREPARING OPTICAL METAL OXIDE LAYERS MERCK PATENT GMBH (DE) 2024-12-12 US disclosed
WO-2024123819-A2 SMALL MOLECULE DEGRADERS OF C-SRC KINASE THE REGENTS OF THE UNIVERSITY OF MICHIGAN (US) 2024-06-13 WO disclosed
CN-116925498-A High-pressure-bearing branched epoxy resin plugging material and oil-based drilling fluid 西南石油大学 2023-10-24 CN disclosed
US-20230260787-A1 COMPOSITION FOR FORMING PROTECTIVE FILM AGAINST ALKALINE AQUEOUS HYDROGEN PEROXIDE, SUBSTRATE FOR PRODUCING SEMICONDUCTOR APPARATUS, METHOD FOR FORMING PROTECTIVE FILM, AND METHOD FOR FORMING PATTERN SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-17 US disclosed
US-11692066-B2 Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound for forming organic film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-07-04 US disclosed
US-11692066-B2 Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound for forming organic film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-07-04 US disclosed
US-11676814-B2 Material for forming organic film, substrate for manufacturing semiconductor apparatus, method for forming organic film, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-13 US disclosed
EP-2043970-A2 IRON-COPPER CO-CATALYZED PROCESS FOR CARBON-CARBON OR CARBON-HETEROATOM BONDING CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS) (FR) 2009-04-08 EP disclosed
EP-2006332-A1 RESIN COMPOSITION AND METHOD FOR PRODUCING SAME TEIJIN LIMITED (JP) 2008-12-24 EP disclosed
US-20080269265-A1 Inhibition Of Raf Kinase Using Symmetrical And Unsymmetrical Substituted Diphenyl Ureas MILLER SCOTT 2008-10-30 US disclosed
US-20080269265-A1 Inhibition Of Raf Kinase Using Symmetrical And Unsymmetrical Substituted Diphenyl Ureas MILLER SCOTT 2008-10-30 US disclosed
WO-2008004088-A2 IRON-COPPER CO-CATALYZED PROCESS FOR CARBON-CARBON OR CARBON-HETEROATOM BONDING CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (C.N.R.S.) (FR) 2008-01-10 WO disclosed
US-20070244120-A1 INHIBITION OF RAF KINASE USING SUBSTITUTED HETEROCYCLIC UREAS BAYER HEALTHCARE LLC 2007-10-18 US disclosed
US-20070244120-A1 INHIBITION OF RAF KINASE USING SUBSTITUTED HETEROCYCLIC UREAS BAYER HEALTHCARE LLC 2007-10-18 US disclosed
US-5189138-A COMPOUNDS, MONOMERS, AND POLYMERS BASED ON PERFLUOROALKYL AND PERFLUOROALKYL-ARYL DIOXAPENTACENE E. I. DU PONT DE NEMOURS AND COMPANY (US) 1993-02-23 US disclosed
JP-S61205232-A 3.4-DICARBOXYDIPHENYL ETHER AND PRODUCTION THEREOF KOBAYASHI YUTAKA 1986-09-11 JP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070244120-A1 INHIBITION OF RAF KINASE USING SUBSTITUTED HETEROCYCLIC UREAS BRAF, RAF1, ARAF LTA4H 4145/4885TSHR 2259/4885KMT2A 1462/4885
US-20080269265-A1 Inhibition Of Raf Kinase Using Symmetrical And Unsymmetrical Substituted Diphenyl Ureas BRAF, RAF1, MAP2K2 LTA4H 4457/4885TSHR 2227/4885KMT2A 1888/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.