SCHEMBL448528

SCHEMBL448528

CC(C)OC(=O)C(C)(C)O

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 4/20 0.46
MEN1 O00255 2/20 0.44
KMT2A Q03164 2/20 0.44
ALDH1A1 P00352 2/20 0.38
LMNA P02545 5/20 0.36
ADRA1A P35348 2/20 0.36
USP2 O75604 2/20 0.36
NPSR1 Q6W5P4 2/20 0.36
ABCB11 O95342 1/20 0.36
CYP1A2 P05177 1/20 0.36
CYP3A4 P08684 1/20 0.36
ADORA3 P0DMS8 1/20 0.36
MAPT P10636 1/20 0.36
CYP2C9 P11712 1/20 0.36
ADRB3 P13945 1/20 0.36
HPGD P15428 1/20 0.36
CNR1 P21554 1/20 0.36
ACHE P22303 1/20 0.36
SLC6A2 P23975 1/20 0.36
HTR2A P28223 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6063978 0.80 TSHR (0.48) TSHRMEN1KMT2AALDH1A1LMNA
SCHEMBL2478389 0.80 TSHR (0.48) TSHRMEN1KMT2AALDH1A1LMNA
SCHEMBL20564587 0.80 TSHR (0.48) TSHRMEN1KMT2AALDH1A1LMNA
SCHEMBL23292873 0.79 TSHR (0.41) TSHRALDH1A1PRKCA
SCHEMBL4675881 0.78 TSHR (0.46) TSHRMEN1KMT2AALDH1A1LMNA
SCHEMBL4675760 0.78 TSHR (0.46) TSHRMEN1KMT2AALDH1A1LMNA
SCHEMBL29278965 0.77 ALDH1A1 (0.33) TSHRALDH1A1PRKCA
SCHEMBL8947297 0.77 ALDH1A1 (0.39) TSHRKMT2AALDH1A1CYP1A2MAPT
SCHEMBL21060855 0.77 TSHR (0.58) TSHRMEN1KMT2AALDH1A1CYP1A2
SCHEMBL131879 0.76 TSHR (0.43) TSHRMEN1KMT2ALMNAADRA1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 281 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2025105354-A1 COMPOSITION FOR SEMICONDUCTOR PRODUCTION 三菱瓦斯化学株式会社 2025-05-22 WO claimed
CN-110874025-B Diluent composition, substrate processing method and semiconductor element manufacturing method 易案爱富科技有限公司 2024-05-24 CN claimed
US-11220659-B2 Thinner composition ENF TECHNOLOGY CO., LTD. (KR) 2022-01-11 US claimed
CN-110874025-A Thinner composition, substrate processing method and semiconductor device manufacturing method 易案爱富科技有限公司 2020-03-10 CN claimed
US-20200071640-A1 THINNER COMPOSITION ENF TECHNOLOGY CO., LTD. (KR) 2020-03-05 US claimed
US-9568830-B2 Thinner composition for improving coating and removing performance of resist DONGWOO FINE-CHEM CO., LTD. (KR) 2017-02-14 US claimed
US-20150355545-A1 THINNER COMPOSITION FOR IMPROVING COATING AND REMOVING PERFORMANCE OF RESIST DONGWOO FINE-CHEM CO., LTD. (KR) 2015-12-10 US claimed
WO-2006119283-A2 ANTI-ODOR COMPOSITIONS AND THERAPEUTIC USE YU RUEY J (US) 2006-11-09 WO claimed
US-20060251597-A1 ANTI-ODOR COMPOSITIONS AND THERAPEUTIC USE YU RUEY J 2006-11-09 US claimed
EP-1016698-B1 Use of a solvent composition containing an oxyisobutyric acid ester as a solvent in coatings, adhesives and printing inks MITSUBISHI RAYON CO (JP) 2004-09-22 EP claimed
EP-1016699-A1 Use of a solvent composition comprising an oxyisobutyric acid ester as a cleaning agent Mitsubishi Rayon Co., Ltd. (JP) 2000-07-05 EP claimed
EP-1016698-A1 Use of a solvent composition containing an oxyisobutyric acid ester as a solvent in coatings, adhesives and printing inks Mitsubishi Rayon Co., Ltd. (JP) 2000-07-05 EP claimed
US-5612303-A HYDROXY OR ETHERIFIED ESTERS NITTO CHEMICAL INDUSTRY CO., LTD. (JP) 1997-03-18 US claimed
EP-0629671-A2 Solvent composition NITTO CHEMICAL INDUSTRY CO., LTD. (JP) 1994-12-21 EP claimed
US-20260140442-A1 RADIATION SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD JSR CORPORATION (JP) 2026-05-21 US disclosed
WO-2026100524-A1 RADIATION-SENSITIVE COMPOSITION, PATTERN FORMING METHOD, ONIUM SALT COMPOUND, AND POLYMER JSR株式会社 2026-05-15 WO disclosed
WO-2026100258-A1 RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND COMPOUND JSR株式会社 2026-05-15 WO disclosed
EP-0629671-A2 Solvent composition NITTO CHEMICAL INDUSTRY CO., LTD. (JP) 1994-12-21 EP disclosed
EP-0448797-A2 Process for producing alpha-hydroxyisobutyric acid MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 1991-10-02 EP disclosed
US-5053535-A Process for producing α-hydroxyisobutyric acid MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 1991-10-01 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260140442-A1 RADIATION SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD RER1, RAD51, RFT1 TSHR 2250/4885MEN1 2082/4885KMT2A 2631/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.