SCHEMBL451959

SCHEMBL451959

O=S(=O)([O-])c1ccccc1C(F)(F)F.c1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.46

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 3/20 0.46
MEN1 O00255 2/20 0.46
SLC22A12 Q96S37 12/20 0.45
ALDH1A1 P00352 1/20 0.44
CYP2C9 P11712 2/20 0.43
SLC22A6 Q4U2R8 2/20 0.43
SLC22A8 Q8TCC7 2/20 0.43
SLC22A11 Q9NSA0 2/20 0.43
HSD11B1 P28845 1/20 0.42
GAA P10253 1/20 0.40
TDP1 Q9NUW8 1/20 0.40
KAT6A Q92794 1/20 0.40
RXFP1 Q9HBX9 1/20 0.40
CYP3A4 P08684 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3204977 0.91 SLC22A12 (0.42) KMT2AMEN1SLC22A12ALDH1A1CYP2C9
SCHEMBL2895718 0.91 KMT2A (0.42) KMT2AMEN1SLC22A12ALDH1A1CYP2C9
SCHEMBL29754085 0.90 HSD11B1 (0.45) KMT2AMEN1SLC22A12ALDH1A1CYP2C9
SCHEMBL452162 0.90 HSD11B1 (0.45) KMT2AMEN1SLC22A12ALDH1A1CYP2C9
SCHEMBL2902155 0.89 KMT2A (0.38) KMT2AMEN1SLC22A12ALDH1A1CYP2C9
SCHEMBL3183361 0.88 GAA (0.51) KMT2AMEN1SLC22A12ALDH1A1GAA
SCHEMBL3202401 0.88 FFAR4 (0.39) KMT2AMEN1SLC22A12ALDH1A1CYP2C9
SCHEMBL3192127 0.88 HSD11B1 (0.38) KMT2AMEN1SLC22A12ALDH1A1CYP2C9
SCHEMBL38660618 0.88 KAT6A (0.42) KMT2AMEN1SLC22A12ALDH1A1CYP2C9
SCHEMBL3192045 0.87 SLC22A12 (0.39) KMT2AMEN1SLC22A12ALDH1A1CYP2C9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 206 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11970557-B2 Polymer containing photoacid generator LG CHEM, LTD. (KR) 2024-04-30 US disclosed
EP-3010943-B1 CURABLE COMPOSITION, FILM, AND METHOD OF PRODUCING FILM CANON KK (JP) 2024-04-03 EP disclosed
US-11681227-B2 Enhanced EUV photoresist materials, formulations and processes IRRESISTIBLE MATERIALS LTD (GB) 2023-06-20 US disclosed
US-11592605-B2 Color developing structure having concave-convex layer, method for producing such structure, and display TOPPAN PRINTING CO., LTD. (JP) 2023-02-28 US disclosed
CN-114975098-A Nanoimprint liquid material, method for producing pattern of cured product, and method for producing circuit board 佳能株式会社 2022-08-30 CN disclosed
CN-107251193-B Nanoimprint liquid material, method for producing pattern of cured product, method for producing optical component, and method for producing circuit board 佳能株式会社 2022-06-21 CN disclosed
CN-113994256-A Method for forming EUV patterned resist 亚历克斯·P·G·罗宾逊 2022-01-28 CN disclosed
US-20210102021-A1 POLYMER CONTAINING PHOTOACID GENERATOR LG CHEM, LTD. (KR) 2021-04-08 US disclosed
US-20200272050-A1 Enhanced EUV Photoresist Materials, Formulations and Processes IRRESISTIBLE MATERIALS, LTD (GB) 2020-08-27 US disclosed
CN-104662049-B Photocurable composition and method for producing film using same 佳能株式会社 2020-06-02 CN disclosed
US-20010033994-A1 Chemical amplification, positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-10-25 US disclosed
US-20010023050-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2001-09-20 US disclosed
US-6280900-B1 RADIATION SENSITIVE COMPOSITION WITH ALKALINE DEVELOPER SOLUBLE IN POLYMER COATED ON SUBSTRATE JSR CORPORATION (JP) 2001-08-28 US disclosed
EP-1122605-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-08-08 EP disclosed
US-6143460-A PHOTOACID GENERATOR PROVIDING IMPROVED PHOTORESIST RESOLUTION JSR CORPORATION (JP) 2000-11-07 US disclosed
US-6136500-A CONTAINS A PHOTOACID GENERATOR COMPRISING A COMBINATION OF A COMPOUND THAT GENERATES A CARBOXYLIC ACID UPON EXPOSURE TO RADIATION AND ANOTHER COMPOUND THAT GENERATES ANOTHER ACID UPON EXPOSURE TO RADIATION JSR CORPORATION (JP) 2000-10-24 US disclosed
EP-1035436-A1 Resist pattern formation method JSR Corporation (JP) 2000-09-13 EP disclosed
EP-1011029-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2000-06-21 EP disclosed
EP-0959389-A1 Diazodisulfone compound and radiation-sensitive resin composition JSR Corporation (JP) 1999-11-24 EP disclosed
EP-0898201-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-02-24 EP disclosed