SCHEMBL4539460

SCHEMBL4539460

CCCCOc1ccc(C)cc1S(=O)(=O)O

nearest known ligand 0.51

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
POLB P06746 2/20 0.51
S1PR3 Q99500 1/20 0.47
MEN1 O00255 4/20 0.45
KMT2A Q03164 4/20 0.45
GAA P10253 2/20 0.45
KDM4E B2RXH2 2/20 0.45
TSHR P16473 5/20 0.45
MAPK1 P28482 2/20 0.43
HSD17B10 Q99714 1/20 0.43
SMN1; SMN2 Q16637 2/20 0.42
L3MBTL1 Q9Y468 2/20 0.42
MAPT P10636 2/20 0.42
THRB P10828 2/20 0.42
ALDH1A1 P00352 2/20 0.42
NPSR1 Q6W5P4 1/20 0.42
SLC2A1 P11166 1/20 0.41
TP53 P04637 1/20 0.41
WDR5 P61964 1/20 0.41
THRA P10827 1/20 0.41
PPARA Q07869 2/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4528105 0.94 S1PR3 (0.54) POLBS1PR3MEN1KMT2AGAA
SCHEMBL4540961 0.94 S1PR3 (0.54) POLBS1PR3MEN1KMT2AGAA
SCHEMBL4528057 0.94 S1PR3 (0.54) POLBS1PR3MEN1KMT2AGAA
SCHEMBL9774344 0.86 S1PR3 (0.48) S1PR3MEN1KMT2AGAATSHR
SCHEMBL156094 0.83 S1PR3 (0.46) S1PR3MEN1KMT2AGAATSHR
SCHEMBL156095 0.83 HSD17B10 (0.49) POLBS1PR3MEN1KMT2AGAA
SCHEMBL14542091 0.82 S1PR3 (0.51) POLBS1PR3MEN1KMT2AGAA
SCHEMBL9498085 0.82 S1PR3 (0.51) POLBS1PR3MEN1KMT2AGAA
SCHEMBL4539163 0.81 ALDH1A1 (0.46) S1PR3MEN1KMT2ATSHRSMN1; SMN2
SCHEMBL5861645 0.80 POLB (0.42) POLBS1PR3MEN1KMT2AGAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7534554-B2 Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition NEC ELECTRONICS CORPORATION (JP) 2009-05-19 US disclosed
US-20080233518-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH SUCH CHEMICALLY AMPLIFIED RESIST COMPOSITION NEC ELECTRONICS CORPORATION (JP) 2008-09-25 US disclosed
US-7396633-B2 Damascene process; forming connectors; exposure; development; using acid generator, quencher and buffer NEC ELECTRONICS CORPORATION (JP) 2008-07-08 US disclosed
US-20040259029-A1 Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition NEC ELECTRONICS CORPORATION (JP) 2004-12-23 US disclosed