⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Phosphine SCHEMBL4234955 | 0.96 | TSHR (0.30) | — | |
| SCHEMBL452809 | 0.96 | — | — | |
| SCHEMBL17680 | 0.96 | — | — | |
| Phosphine SCHEMBL28297157 | 0.93 | — | — | |
| SCHEMBL2104199 | 0.92 | — | — | |
| Hydrochloric Acid SCHEMBL4886746 | 0.92 | — | — | |
| SCHEMBL8967299 | 0.92 | — | — | |
| SCHEMBL21752046 | 0.92 | — | — | |
| Phosphine SCHEMBL8967295 | 0.92 | TSHR (0.32) | — | |
| SCHEMBL3134796 | 0.92 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-110465331-A | The preparation method and application of B-SBA-16 load silico-tungstic acid type ionic liquid composite catalyst | UNIV JIANGSU | 2019-11-19 | — | — | CN | claimed |
| CN-111341726-B | Semiconductor device and method for manufacturing the same | 夏泰鑫半导体(青岛)有限公司 | 2023-05-02 | — | — | CN | disclosed |
| CN-110416223-A | Vertical memory device | SAMSUNG ELECTRONICS CO LTD | 2019-11-05 | — | — | CN | disclosed |
| CN-106298673-B | A kind of semiconductor devices and its manufacturing method | 中芯国际集成电路制造(上海)有限公司 | 2019-09-27 | — | — | CN | disclosed |
| CN-104821322-B | Vertical memory device | 三星电子株式会社 | 2019-08-16 | — | — | CN | disclosed |
| CN-109698238-A | A kind of manufacturing method of semiconductor devices | 中芯国际集成电路制造(上海)有限公司 | 2019-04-30 | — | — | CN | disclosed |
| CN-105097422-B | A kind of reflection mirror of silicon-based LCD device and preparation method thereof | 中芯国际集成电路制造(上海)有限公司 | 2018-08-17 | — | — | CN | disclosed |
| CN-105448691-B | A kind of semiconductor devices and preparation method thereof and electronic device | 中芯国际集成电路制造(上海)有限公司 | 2018-06-08 | — | — | CN | disclosed |
| CN-104851802-B | A kind of semiconductor devices and preparation method thereof | 中芯国际集成电路制造(上海)有限公司 | 2018-04-13 | — | — | CN | disclosed |
| CN-104716258-B | Semiconductor devices and preparation method thereof | 中芯国际集成电路制造(上海)有限公司 | 2018-03-20 | — | — | CN | disclosed |
| CN-104821322-A | Vertical memory device | SAMSUNG ELECTRONICS CO LTD | 2015-08-05 | — | — | CN | disclosed |
| CN-100499044-C | Strain source-drain producing method utilizing new hard mask | ZHONGXIN INT IC MFG SHANGHAI (CN) | 2009-06-10 | — | — | CN | disclosed |
| CN-1933112-A | Strain source-drain producing method utilizing new hard mask | ZHONGXIN INT IC MFG SHANGHAI (CN) | 2007-03-21 | — | — | CN | disclosed |
| CN-1304199-C | Full-integrated hot ink-jet print head having silicophosphate glass layer with etched back | HEWLETT PACKARD CO (US) | 2007-03-14 | — | — | CN | disclosed |
| CN-1234528-C | Full-integrated hot ink-jet print head having plurality of inking holes per jet port | HEWLETT PACKARD CO (US) | 2006-01-04 | — | — | CN | disclosed |
| CN-1221392-C | Full-integrated hot ink-jet print head with laminated film | HEWLETT PACKARD CO (US) | 2005-10-05 | — | — | CN | disclosed |
| CN-1286168-A | Full-integrated hot ink-jet print head having silicophosphate glass layer with etched back | HEWLETT PACKARD CO (US) | 2001-03-07 | — | — | CN | disclosed |
| CN-1286167-A | Full-integrated hot ink-jet print head with laminated film | HEWLETT PACKARD CO (US) | 2001-03-07 | — | — | CN | disclosed |
| CN-1286169-A | Full-integrated hot ink-jet print head having plurality of inking holes per jet port | HEWLETT PACKARD CO (US) | 2001-03-07 | — | — | CN | disclosed |
| US-5028967-A | High purity silica and germanium and/or boron oxide containing lenses | TOSOH CORPORATION (JP) | 1991-07-02 | — | — | US | disclosed |