SCHEMBL4528217

SCHEMBL4528217

CCCCCCCCCCCCCCCCCCCCCCCCc1ccc(S(=O)(=O)O)cc1

nearest known ligand 0.66

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA2 P00918 3/20 0.66
ALDH1A1 P00352 3/20 0.58
ESR1 P03372 2/20 0.58
ADRA2A P08913 2/20 0.58
ADORA3 P0DMS8 2/20 0.58
TACR2 P21452 2/20 0.58
SLC6A2 P23975 2/20 0.58
SLC6A4 P31645 2/20 0.58
SLC6A3 Q01959 2/20 0.58
KDM4E B2RXH2 1/20 0.58
LMNA P02545 1/20 0.58
SHBG P04278 1/20 0.58
TP53 P04637 1/20 0.58
CYP3A4 P08684 1/20 0.58
HSPD1 P10809 1/20 0.58
ADRB3 P13945 1/20 0.58
HTR2C P28335 1/20 0.58
HSPE1 P61604 1/20 0.58
HIF1A Q16665 1/20 0.58
TST Q16762 1/20 0.58

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4532142 1.00 CA2 (0.66) CA2ALDH1A1ESR1ADRA2AADORA3
SCHEMBL4527877 1.00 CA2 (0.66) CA2ALDH1A1ESR1ADRA2AADORA3
SCHEMBL4203952 1.00 CA2 (0.66) CA2ALDH1A1ESR1ADRA2AADORA3
SCHEMBL1301381 1.00 CA2 (0.66) CA2ALDH1A1ESR1ADRA2AADORA3
SCHEMBL4534627 1.00 CA2 (0.66) CA2ALDH1A1ESR1ADRA2AADORA3
SCHEMBL195157 1.00 CA2 (0.66) CA2ALDH1A1ESR1ADRA2AADORA3
SCHEMBL974537 1.00 CA2 (0.66) CA2ALDH1A1ESR1ADRA2AADORA3
SCHEMBL2733171 1.00 CA2 (0.66) CA2ALDH1A1ESR1ADRA2AADORA3
SCHEMBL4532942 1.00 CA2 (0.66) CA2ALDH1A1ESR1ADRA2AADORA3
SCHEMBL197275 1.00 CA2 (0.66) CA2ALDH1A1ESR1ADRA2AADORA3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7534554-B2 Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition NEC ELECTRONICS CORPORATION (JP) 2009-05-19 US disclosed
US-20080233518-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH SUCH CHEMICALLY AMPLIFIED RESIST COMPOSITION NEC ELECTRONICS CORPORATION (JP) 2008-09-25 US disclosed
US-7396633-B2 Damascene process; forming connectors; exposure; development; using acid generator, quencher and buffer NEC ELECTRONICS CORPORATION (JP) 2008-07-08 US disclosed
US-20040259029-A1 Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition NEC ELECTRONICS CORPORATION (JP) 2004-12-23 US disclosed
US-5527498-A EVAPORATING WATER FROM AMMONIUM NITRATE SOLUTION TO OBTAIN CONCENTRATE, ADDING AQUEOUS NAPHTHALENESULFONATE, FORMING DROPLETS IN PRILLING TOWER, COOLING BY COUNTERCURRENT FLOW TO UPWARD GAS FLOW TO SOLIDIFY ARCADIAN FERTILIZER, L.P. (US) 1996-06-18 US disclosed
US-5486246-A High density ammonium nitrate prill and method of production of the same ARCADIAN FERTILIZER, L.P. (US) 1996-01-23 US disclosed