SCHEMBL454439

SCHEMBL454439

CC(S)(S)S(=O)(=O)O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4456599 0.85
Sulfuric Acid SCHEMBL31019639 0.80 CA5A (0.50)
Trifluoromethanesulfonic Acid SCHEMBL27568072 0.76 ALDH1A1 (0.39)
SCHEMBL28624 0.75
SCHEMBL8936636 0.74
Methane SCHEMBL25338251 0.72
SCHEMBL3624969 0.72 CA5A (0.39)
SCHEMBL5182405 0.72
SCHEMBL23883899 0.72
Fluoride SCHEMBL4448568 0.72

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 102 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12559853-B2 Differential contrast plating for advanced packaging applications LAM RESEARCH CORPORATION (US) 2026-02-24 US claimed
CN-114514340-B Differential contrast plating for advanced packaging applications 朗姆研究公司 2025-03-21 CN claimed
US-20220275531-A1 DIFFERENTIAL CONTRAST PLATING FOR ADVANCED PACKAGING APPLICATIONS LAM RESEARCH CORPORATION (US) 2022-09-01 US claimed
US-11371154-B2 Methods and systems for electrochemical additive manufacturing THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ALABAMA (US) 2022-06-28 US claimed
CN-114514340-A Differential contrast plating for advanced packaging applications 朗姆研究公司 2022-05-17 CN claimed
US-20210301413-A1 METHODS AND SYSTEMS FOR ELECTROCHEMICAL ADDITIVE MANUFACTURING THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ALABAMA 2021-09-30 US claimed
US-11008664-B2 Methods and systems for electrochemical additive manufacturing THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ALABAMA (US) 2021-05-18 US claimed
US-20190055661-A1 METHODS AND SYSTEMS FOR ELECTROCHEMICAL ADDITIVE MANUFACTURING THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ALABAMA 2019-02-21 US claimed
US-20160355939-A1 POLARIZATION STABILIZER ADDITIVE FOR ELECTROPLATING LAM RESEARCH CORPORATION 2016-12-08 US claimed
US-8500985-B2 Photoresist-free metal deposition NOVELLUS SYSTEMS, INC. (US) 2013-08-06 US claimed
WO-2013090295-A1 MONITORING LEVELER CONCENTRATIONS IN ELECTROPLATING SOLUTIONS NOVELLUS SYSTEMS, INC. (US) 2013-06-20 WO claimed
US-8268154-B1 Selective electrochemical accelerator removal NOVELLUS SYSTEMS, INC. (US) 2012-09-18 US claimed
US-8158532-B2 Topography reduction and control by selective accelerator removal NOVELLUS SYSTEMS, INC. (US) 2012-04-17 US claimed
US-7799200-B1 Selective electrochemical accelerator removal NOVELLUS SYSTEMS, INC. (US) 2010-09-21 US claimed
US-20090277867-A1 Topography reduction and control by selective accelerator removal NOVELLUS SYSTEMS, INC. (US) 2009-11-12 US claimed
US-7560016-B1 Selectively accelerated plating of metal features NOVELLUS SYSTEMS, INC. (US) 2009-07-14 US claimed
US-7449098-B1 Selective acceleration planarization: accelerator deposited on a plated surface and mechanically removed; wafer then plated in an electrolyte containing little or no accelerating additives; elimination of need to continually remove the additive from the exposed regions during plating NOVELLUS SYSTEMS, INC. (US) 2008-11-11 US claimed
US-7449099-B1 Selectively accelerated plating of metal features NOVELLUS SYSTEMS, INC. (US) 2008-11-11 US claimed
US-7405163-B1 Selectively accelerated plating of metal features NOVELLUS SYSTEMS, INC. (US) 2008-07-29 US claimed
US-12559853-B2 Differential contrast plating for advanced packaging applications LAM RESEARCH CORPORATION (US) 2026-02-24 US disclosed
US-20250263862-A1 TSV PROCESS WINDOW AND FILL PERFORMANCE ENHANCEMENT BY LONG PULSING AND RAMPING LAM RES CORP (US) 2025-08-21 US disclosed
US-12305307-B2 TSV process window and fill performance enhancement by long pulsing and ramping LAM RESEARCH CORPORATION (US) 2025-05-20 US disclosed
CN-114514340-B Differential contrast plating for advanced packaging applications 朗姆研究公司 2025-03-21 CN disclosed
CN-112135930-B Copper electrical fill on non-copper liner layer 朗姆研究公司 2024-10-29 CN disclosed
US-12012667-B2 Copper electrofill on non-copper liner layers LAM RESEARCH CORPORATION (US) 2024-06-18 US disclosed
US-20230340686-A1 ELECTROHYDRODYNAMIC EJECTION PRINTING AND ELECTROPLATING FOR PHOTORESIST-FREE FORMATION OF METAL FEATURES LAM RESEARCH CORPORATION 2023-10-26 US disclosed
US-20230212773-A1 SURFACE PRETREATMENT FOR ELECTROPLATING NANOTWINNED COPPER LAM RESEARCH CORPORATION 2023-07-06 US disclosed
CN-116134182-A Electroplated nano-bicrystal and non-nano-bicrystal copper features 朗姆研究公司 2023-05-16 CN disclosed
CN-115874250-A System for be used for two-sided electroplating 华天科技(昆山)电子有限公司 2023-03-31 CN disclosed
US-20230026818-A1 TSV PROCESS WINDOW AND FILL PERFORMANCE ENHANCEMENT BY LONG PULSING AND RAMPING LAM RESEARCH CORPORATION 2023-01-26 US disclosed
CN-115053326-A Photoresist free electrohydrodynamic jet printing and plating for metal features 朗姆研究公司 2022-09-13 CN disclosed
US-20220275531-A1 DIFFERENTIAL CONTRAST PLATING FOR ADVANCED PACKAGING APPLICATIONS LAM RESEARCH CORPORATION (US) 2022-09-01 US disclosed
CN-114930502-A Improving TSV processing window and fill performance through long pulsing and ramping 朗姆研究公司 2022-08-19 CN disclosed
US-11371154-B2 Methods and systems for electrochemical additive manufacturing THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ALABAMA (US) 2022-06-28 US disclosed
CN-114514340-A Differential contrast plating for advanced packaging applications 朗姆研究公司 2022-05-17 CN disclosed
US-20220010446-A1 ELECTRODEPOSITION OF NANOTWINNED COPPER STRUCTURES LAM RESEARCH CORPORATION 2022-01-13 US disclosed
WO-2021236398-A1 ELECTROPLATING NANOTWINNED AND NON-NANOTWINNED COPPER FEATURES LAM RESEARCH CORPORATION (US) 2021-11-25 WO disclosed
US-20210301413-A1 METHODS AND SYSTEMS FOR ELECTROCHEMICAL ADDITIVE MANUFACTURING THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ALABAMA 2021-09-30 US disclosed
CN-113260739-A Electrodeposition of nano-twin copper structures 朗姆研究公司 2021-08-13 CN disclosed
WO-2021158402-A1 ELECTROHYDRODYNAMIC EJECTION PRINTING AND ELECTROPLATING FOR PHOTORESIST-FREE FORMATION OF METAL FEATURES LAM RESEARCH CORPORATION (US) 2021-08-12 WO disclosed
US-11078591-B2 Process for optimizing cobalt electrofill using sacrificial oxidants LAM RESEARCH CORPORATION (US) 2021-08-03 US disclosed
WO-2021142357-A1 TSV PROCESS WINDOW AND FILL PERFORMANCE ENHANCEMENT BY LONG PULSING AND RAMPING LAM RESEARCH CORPORATION (US) 2021-07-15 WO disclosed
US-20210156045-A1 COPPER ELECTROFILL ON NON-COPPER LINER LAYERS LAM RESEARCH CORPORATION 2021-05-27 US disclosed
US-11008664-B2 Methods and systems for electrochemical additive manufacturing THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ALABAMA (US) 2021-05-18 US disclosed
CN-112135930-A Copper electro-fill on non-copper liner layer 朗姆研究公司 2020-12-25 CN disclosed
US-10774438-B2 Monitoring electrolytes during electroplating LAM RESEARCH CORPORATION (US) 2020-09-15 US disclosed
US-10745817-B2 Configuration and method of operation of an electrodeposition system for improved process stability and performance NOVELLUS SYSTEMS, INC. (US) 2020-08-18 US disclosed
CN-107858742-B TSV bath evaluation using field to feature comparisons 朗姆研究公司 2020-06-23 CN disclosed
CN-111247633-A Multiple bath plating of single metals 朗姆研究公司 2020-06-05 CN disclosed
US-20190271094-A1 PROCESS FOR OPTIMIZING COBALT ELECTROFILL USING SACRIFICIAL OXIDANTS LAM RES CORP (US) 2019-09-05 US disclosed
US-10329683-B2 Process for optimizing cobalt electrofill using sacrificial oxidants LAM RESEARCH CORPORATION (US) 2019-06-25 US disclosed
US-20190145017-A1 LOW COPPER ELECTROPLATING SOLUTIONS FOR FILL AND DEFECT CONTROL NOVELLUS SYSTEMS INC (US) 2019-05-16 US disclosed
US-20190122890-A1 MULTIBATH PLATING OF A SINGLE METAL LAM RESEARCH CORPORATION 2019-04-25 US disclosed
US-20190055661-A1 METHODS AND SYSTEMS FOR ELECTROCHEMICAL ADDITIVE MANUFACTURING THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ALABAMA 2019-02-21 US disclosed
US-20190010626-A1 MONITORING ELECTROLYTES DURING ELECTROPLATING LAM RES CORP (US) 2019-01-10 US disclosed
US-10094038-B2 Monitoring electrolytes during electroplating LAM RESEARCH CORPORATION (US) 2018-10-09 US disclosed
US-20180119305-A1 PROCESS FOR OPTIMIZING COBALT ELECTROFILL USING SACRIFICIAL OXIDANTS LAM RESEARCH CORPORATION 2018-05-03 US disclosed
CN-107858742-A Bathed and assessed using the TSV of field and Characteristic Contrast 朗姆研究公司 2018-03-30 CN disclosed
US-20180038007-A1 CONFIGURATION AND METHOD OF OPERATION OF AN ELECTRODEPOSITION SYSTEM FOR IMPROVED PROCESS STABILITY AND PERFORMANCE NOVELLUS SYSTEMS INC (US) 2018-02-08 US disclosed
US-20180030611-A1 METHOD AND APPARATUS FOR ELECTROPLATING SEMICONDUCTOR WAFER WHEN CONTROLLING CATIONS IN ELECTROLYTE NOVELLUS SYSTEMS INC (US) 2018-02-01 US disclosed
US-9856574-B2 Monitoring leveler concentrations in electroplating solutions NOVELLUS SYSTEMS, INC. (US) 2018-01-02 US disclosed
CN-104233451-B TSV bath evaluation using field to feature comparisons 朗姆研究公司 2017-11-24 CN disclosed
US-9816193-B2 Configuration and method of operation of an electrodeposition system for improved process stability and performance NOVELLUS SYSTEMS, INC. (US) 2017-11-14 US disclosed
US-9816196-B2 Method and apparatus for electroplating semiconductor wafer when controlling cations in electrolyte NOVELLUS SYSTEMS, INC. (US) 2017-11-14 US disclosed
US-20170241041-A1 TSV BATH EVALUATION USING FIELD VERSUS FEATURE CONTRAST LAM RES CORP (US) 2017-08-24 US disclosed
US-9689083-B2 TSV bath evaluation using field versus feature contrast LAM RESEARCH CORPORATION (US) 2017-06-27 US disclosed
US-9677190-B2 Membrane design for reducing defects in electroplating systems LAM RESEARCH CORPORATION (US) 2017-06-13 US disclosed
US-20160355939-A1 POLARIZATION STABILIZER ADDITIVE FOR ELECTROPLATING LAM RESEARCH CORPORATION 2016-12-08 US disclosed
US-20160298256-A1 MONITORING ELECTROLYTES DURING ELECTROPLATING LAM RESEARCH CORPORATION 2016-10-13 US disclosed
US-9412713-B2 Treatment method of electrodeposited copper for wafer-level-packaging process flow NOVELLUS SYSTEMS, INC. (US) 2016-08-09 US disclosed
US-20160186356-A1 MONITORING LEVELER CONCENTRATIONS IN ELECTROPLATING SOLUTIONS NOVELLUS SYSTEMS INC (US) 2016-06-30 US disclosed
US-20160102416-A1 LOW COPPER/HIGH HALIDE ELECTROPLATING SOLUTIONS FOR FILL AND DEFECT CONTROL NOVELLUS SYSTEMS, INC. 2016-04-14 US disclosed
US-9309605-B2 Monitoring leveler concentrations in electroplating solutions NOVELLUS SYSTEMS, INC. (US) 2016-04-12 US disclosed
US-20150345039-A1 COMPOSITION HAVING ALKALINE PH AND PROCESS FOR FORMING SUPERCONFORMATION THEREWITH GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE, THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY 2015-12-03 US disclosed
US-20150122658-A1 MEMBRANE DESIGN FOR REDUCING DEFECTS IN ELECTROPLATING SYSTEMS LAM RESEARCH CORPORATION (US) 2015-05-07 US disclosed
US-20150053565-A1 BOTTOM-UP FILL IN DAMASCENE FEATURES LAM RESEARCH CORPORATION (US) 2015-02-26 US disclosed
CN-104233451-A TSV bath evaluation using field to feature comparisons LAM RES CORP 2014-12-24 CN disclosed
US-20140367279-A1 TSV BATH EVALUATION USING FIELD VERSUS FEATURE CONTRAST LAM RESEARCH CORPORATION (US) 2014-12-18 US disclosed
US-8795482-B1 Selective electrochemical accelerator removal NOVELLUS SYSTEMS, INC. (US) 2014-08-05 US disclosed
US-20140209476-A1 LOW COPPER ELECTROPLATING SOLUTIONS FOR FILL AND DEFECT CONTROL NOVELLUS SYSTEMS, INC. 2014-07-31 US disclosed
US-20140014522-A1 PHOTORESIST-FREE METAL DEPOSITION NOVELLUS SYSTEMS, INC. (US) 2014-01-16 US disclosed
US-20130284604-A1 METHOD AND APPARATUS FOR ELECTROPLATING SEMICONDUCTOR WAFER WHEN CONTROLLING CATIONS IN ELECTROLYTE NOVELLUS SYSTEMS, INC. 2013-10-31 US disclosed
US-8500985-B2 Photoresist-free metal deposition NOVELLUS SYSTEMS, INC. (US) 2013-08-06 US disclosed
US-20130161203-A1 MONITORING LEVELER CONCENTRATIONS IN ELECTROPLATING SOLUTIONS NOVELLUS SYSTEMS, INC. 2013-06-27 US disclosed
US-8470191-B2 Topography reduction and control by selective accelerator removal NOVELLUS SYSTEMS, INC. (US) 2013-06-25 US disclosed
WO-2013090295-A1 MONITORING LEVELER CONCENTRATIONS IN ELECTROPLATING SOLUTIONS NOVELLUS SYSTEMS, INC. (US) 2013-06-20 WO disclosed
CN-102677139-A Configuration and method of operation of an electrodeposition system for improved process stability and performance NOVELLUS SYSTEMS INC 2012-09-19 CN disclosed
US-8268154-B1 Selective electrochemical accelerator removal NOVELLUS SYSTEMS, INC. (US) 2012-09-18 US disclosed
US-20120175263-A1 CONFIGURATION AND METHOD OF OPERATION OF AN ELECTRODEPOSITION SYSTEM FOR IMPROVED PROCESS STABILITY AND PERFORMANCE NOVELLUS SYSTEMS, INC. 2012-07-12 US disclosed
US-8158532-B2 Topography reduction and control by selective accelerator removal NOVELLUS SYSTEMS, INC. (US) 2012-04-17 US disclosed
US-20120064462-A1 BY-PRODUCT MITIGATION IN THROUGH-SILICON-VIA PLATING NOVELLUS SYSTEMS, INC. 2012-03-15 US disclosed
US-7947163-B2 Photoresist-free metal deposition NOVELLUS SYSTEMS, INC. (US) 2011-05-24 US disclosed
US-7799200-B1 Selective electrochemical accelerator removal NOVELLUS SYSTEMS, INC. (US) 2010-09-21 US disclosed
US-20090280649-A1 Topography reduction and control by selective accelerator removal NOVELLUS SYSTEMS, INC. (US) 2009-11-12 US disclosed
US-20090277867-A1 Topography reduction and control by selective accelerator removal NOVELLUS SYSTEMS, INC. (US) 2009-11-12 US disclosed
US-20090277801-A1 Photoresist-free metal deposition NOVELLUS SYSTEMS, INC. (US) 2009-11-12 US disclosed
US-20090280243-A1 Photoresist-free metal deposition NOVELLUS SYSTEMS, INC. (US) 2009-11-12 US disclosed
US-7560016-B1 Selectively accelerated plating of metal features NOVELLUS SYSTEMS, INC. (US) 2009-07-14 US disclosed
US-7449098-B1 Selective acceleration planarization: accelerator deposited on a plated surface and mechanically removed; wafer then plated in an electrolyte containing little or no accelerating additives; elimination of need to continually remove the additive from the exposed regions during plating NOVELLUS SYSTEMS, INC. (US) 2008-11-11 US disclosed
US-7449099-B1 Selectively accelerated plating of metal features NOVELLUS SYSTEMS, INC. (US) 2008-11-11 US disclosed
US-7405163-B1 Selectively accelerated plating of metal features NOVELLUS SYSTEMS, INC. (US) 2008-07-29 US disclosed
CN-1165483-A Composition of cisplatin and 2,2' -dithio-bis (ethanesulfonate) (dimercaptoethanesulfonic acid sodium salt) BIONUMEIK PHARMACEUTICALS INC (US) 1997-11-19 CN disclosed
CN-1165483-A Composition of cisplatin and 2,2' -dithio-bis (ethanesulfonate) (dimercaptoethanesulfonic acid sodium salt) BIONUMEIK PHARMACEUTICALS INC (US) 1997-11-19 CN disclosed