Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KMT2A | Q03164 | 5/20 | 0.50 |
| ▸ | MEN1 | O00255 | 4/20 | 0.50 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.49 |
| ▸ | CYP2C19 | P33261 | 2/20 | 0.49 |
| ▸ | SMN1; SMN2 | Q16637 | 3/20 | 0.48 |
| ▸ | F2 | P00734 | 2/20 | 0.47 |
| ▸ | PRSS1 | P07477 | 2/20 | 0.47 |
| ▸ | PRSS2 | P07478 | 2/20 | 0.47 |
| ▸ | PRSS3 | P35030 | 2/20 | 0.47 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.46 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.46 |
| ▸ | CXCR3 | P49682 | 1/20 | 0.46 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.46 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.46 |
| ▸ | CA1 | P00915 | 2/20 | 0.46 |
| ▸ | CA2 | P00918 | 2/20 | 0.46 |
| ▸ | CA5A | P35218 | 2/20 | 0.46 |
| ▸ | CA5B | Q9Y2D0 | 2/20 | 0.46 |
| ▸ | TSHR | P16473 | 1/20 | 0.46 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.46 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18962226 | 1.00 | KMT2A (0.50) | KMT2AMEN1CYP1A2CYP2C19SMN1; SMN2 | |
| SCHEMBL452144 | 0.91 | KMT2A (0.56) | KMT2AMEN1CYP1A2CYP2C19SMN1; SMN2 | |
| SCHEMBL8968927 | 0.89 | FTO (0.45) | KMT2AMEN1CYP1A2CYP2C19SMN1; SMN2 | |
| SCHEMBL8756323 | 0.88 | KMT2A (0.48) | KMT2AMEN1CYP1A2CYP2C19SMN1; SMN2 | |
| SCHEMBL19985741 | 0.87 | SMN1; SMN2 (0.42) | KMT2AMEN1CYP1A2CYP2C19SMN1; SMN2 | |
| SCHEMBL13829109 | 0.86 | KMT2A (0.41) | KMT2AMEN1CYP1A2CYP2C19SMN1; SMN2 | |
| SCHEMBL15617809 | 0.85 | CXCR3 (0.41) | KMT2AMEN1CYP1A2CYP2C19SMN1; SMN2 | |
| SCHEMBL13829259 | 0.84 | KMT2A (0.41) | KMT2AMEN1CYP1A2CYP2C19SMN1; SMN2 | |
| SCHEMBL13829263 | 0.84 | KMT2A (0.40) | KMT2AMEN1CYP1A2CYP2C19SMN1; SMN2 | |
| SCHEMBL13829089 | 0.84 | CXCR3 (0.41) | KMT2AMEN1CYP1A2CYP2C19SMN1; SMN2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 226 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-108267933-B | Radiation-sensitive composition and patterning and metallization process | 罗门哈斯电子材料有限责任公司 | 2021-12-03 | — | — | CN | claimed |
| US-10962880-B2 | Radiation-sensitive compositions and patterning and metallization processes | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2021-03-30 | — | — | US | claimed |
| US-20200201175-A1 | RADIATION-SENSITIVE COMPOSITIONS AND PATTERNING AND METALLIZATION PROCESSES | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2020-06-25 | — | — | US | claimed |
| CN-108267933-A | Radiation-sensitive composition and patterning and method for metallising | 罗门哈斯电子材料有限责任公司 | 2018-07-10 | — | — | CN | claimed |
| US-20180188648-A1 | RADIATION-SENSITIVE COMPOSITIONS AND PATTERNING AND METALLIZATION PROCESSES | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2018-07-05 | — | — | US | claimed |
| EP-3343293-A1 | RADIATION-SENSITIVE COMPOSITIONS AND PATTERNING AND METALLIZATION PROCESSES | Rohm and Haas Electronic Materials LLC (US) | 2018-07-04 | — | — | EP | claimed |
| US-7153630-B2 | Resist with reduced line edge roughness | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2006-12-26 | — | — | US | claimed |
| US-20060078820-A1 | Resist with reduced line edge roughness | MASS INSTITUTE OF TECHNOLOGY (MIT) (US) | 2006-04-13 | — | — | US | claimed |
| US-20030036015-A1 | Resist with reduced line edge roughness | AIR FORCE, UNITED STATES | 2003-02-20 | — | — | US | claimed |
| WO-2002091084-A2 | RESIST WITH REDUCED LINE EDGE ROUGHNESS | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2002-11-14 | — | — | WO | claimed |
| CN-113805435-B | Photoresist and method | 台湾积体电路制造股份有限公司 | 2024-05-28 | — | — | CN | disclosed |
| CN-110955112-B | Photoresist composition and method for forming photoresist pattern | 台湾积体电路制造股份有限公司 | 2024-04-26 | — | — | CN | disclosed |
| CN-117826534-A | Method for forming semiconductor device | 台湾积体电路制造股份有限公司 | 2024-04-05 | — | — | CN | disclosed |
| US-11940730-B2 | Photoresist compositions and pattern formation methods | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2024-03-26 | — | — | US | disclosed |
| EP-3900932-B1 | METHOD FOR MANUFACTURING LAMINATED STEEL PLATE AND DEVICE FOR MANUFACTURING LAMINATED STEEL PLATE | THREE BOND CO LTD (JP) | 2024-03-06 | — | — | EP | disclosed |
| US-7179578-B2 | Positive resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
| US-20070020559-A1 | Positive-type photosensitive resin composition and cured film manufactured therefrom | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2007-01-25 | — | — | US | disclosed |
| US-20050271972-A1 | Chemically amplified positive photosensitive resin composition | MERCK PATENT GMBH (DE) | 2005-12-08 | — | — | US | disclosed |
| EP-1562077-A1 | CHEMICALLY AMPLIFIED POSITIVE PHOTOSENSITIVE RESIN COMPOSITION | AZ Electronic Materials (Japan) K.K. (JP) | 2005-08-10 | — | — | EP | disclosed |
| CN-1497344-A | Chemical amplification pasitive corrosion stability compound | 住友化学工业株式会社 | 2004-05-19 | — | — | CN | disclosed |