SCHEMBL4565670

SCHEMBL4565670

C=CCN(C(=O)c1ccc(N)cc1)c1ccc(N)cc1

nearest known ligand 0.57

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.57
MEN1 O00255 3/20 0.46
KMT2A Q03164 3/20 0.46
POLB P06746 2/20 0.44
ADRA2C P18825 1/20 0.37
SMN1; SMN2 Q16637 1/20 0.37
ALDH1A1 P00352 2/20 0.36
LMNA P02545 3/20 0.36
ESRRG P62508 1/20 0.35
CYP1A2 P05177 1/20 0.35
CYP3A4 P08684 1/20 0.35
MAOA P21397 1/20 0.35
RAB9A P51151 1/20 0.35
KDM4E B2RXH2 1/20 0.34
MAPT P10636 1/20 0.34
HIF1A Q16665 1/20 0.34
SLC22A6 Q4U2R8 1/20 0.34
SLC22A8 Q8TCC7 1/20 0.34
PHLPP2 Q6ZVD8 1/20 0.34
MLYCD O95822 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9509046 0.79 TSHR (0.73) TSHRMEN1KMT2APOLBADRA2C
SCHEMBL28637636 0.78 TSHR (0.70) TSHRMEN1KMT2APOLBADRA2C
SCHEMBL6909361 0.77 MEN1 (0.47) TSHRMEN1KMT2APOLBADRA2C
SCHEMBL18455023 0.75 EGFR (0.46) TSHRADRA2CALDH1A1LMNACYP1A2
SCHEMBL9176209 0.72 TSHR (0.46) TSHRMEN1KMT2APOLBALDH1A1
SCHEMBL4921797 0.72 ALDH1A1 (0.43) TSHRMEN1KMT2APOLBSMN1; SMN2
SCHEMBL18147489 0.71 CYP3A4 (0.46) TSHRMEN1KMT2APOLBSMN1; SMN2
SCHEMBL15652475 0.71 ADRA2C (0.57) TSHRMEN1KMT2APOLBADRA2C
SCHEMBL6255892 0.71 ALDH1A1 (0.39) TSHRMEN1KMT2APOLBALDH1A1
SCHEMBL127344 0.70 ALDH1A1 (0.52) TSHRMEN1KMT2AALDH1A1ESRRG

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7631768-B2 Membrane and associated method GENERAL ELECTRIC COMPANY (US) 2009-12-15 US disclosed
WO-2008083258-A1 POLYIMIDE/COPOLYIMIDE FILMS WITH LOW GLASS TRANSITION TEMPERATURE FOR USE AS HOT MELT ADHESIVES ADAPTIVENERGY, LLC. (US) 2008-07-10 WO disclosed
US-7291696-B2 Composition and associated method GENERAL ELECTRIC COMPANY (US) 2007-11-06 US disclosed
US-20070106052-A1 Composition and associated method GENERAL ELECTRIC COMPANY (US) 2007-05-10 US disclosed
US-20070102349-A1 Membrane and associated method GENERAL ELECTRIC COMPANY (US) 2007-05-10 US disclosed
US-7147920-B2 Backing, adhesive layer, and protective member, where the adhesive layer comprises a phenolic hydroxyl radical-bearing polyimide resin, an epoxy resin, and an epoxy resin curing agent; improved adhesion, heat resistance, low modulus of elasticity SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-12-12 US disclosed
US-7060786-B2 Comprises epoxy resins and polyimides; for printed circuits and semiconductor packages SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-06-13 US disclosed
US-6949619-B2 Phenolic hydroxyl-bearing polyimide resin, making method and polyimide resin composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-09-27 US disclosed
US-6808819-B2 POLYIMIDE RESIN, EPOXY RESIN-CURING CATALYST, AND AN EPOXY RESIN SHIN ETSU CHEMICAL CO., LTD. (JP) 2004-10-26 US disclosed
US-20040105990-A1 Wafer dicing/die bonding sheet SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-06-03 US disclosed
US-20040019174-A1 Phenolic hydroxyl-bearing polyimide resin, making method and polyimide resin composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-01-29 US disclosed
US-20030220455-A1 Comprises epoxy resins and polyimides; for printed circuits and semiconductor packages SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-11-27 US disclosed
US-20030158350-A1 Heat resistant resin composition and adhesive film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-08-21 US disclosed