SCHEMBL4580357

SCHEMBL4580357

CC(C)C(C)(C)[SiH2]N(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2273757 0.65
SCHEMBL31722613 0.65
SCHEMBL8599018 0.62
SCHEMBL9247209 0.60
SCHEMBL5150467 0.60
SCHEMBL1150332 0.60
SCHEMBL1472264 0.60
SCHEMBL31722300 0.60
SCHEMBL10560645 0.58
SCHEMBL8632646 0.58

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20180311622-A1 PURIFICATION METHOD FOR PURIFYING LIQUID, PURIFICATION METHOD FOR PURIFYING SILICON COMPOUND-CONTAINING LIQUID, METHOD FOR PRODUCING SILYLATING AGENT LIQUID, FILM FORMING MATERIAL OR DIFFUSING AGENT COMPOSITION, FILTER MEDIUM AND FILTER DEVICE TOKYO OHKA KOGYO CO., LTD. (JP) 2018-11-01 US disclosed
US-20180254182-A1 SURFACE TREATMENT METHOD AND SURFACE TREATMENT LIQUID TOKYO OHKA KOGYO CO., LTD. (JP) 2018-09-06 US disclosed
US-9868090-B2 Process for preparing chemical liquid of silylating agent and surface treatment method TOKYO OHKA KOGYO CO., LTD. (JP) 2018-01-16 US disclosed
US-9796879-B2 Film-forming material TOKYO OHKA KOGYO CO., LTD. (JP) 2017-10-24 US disclosed
US-20160279578-A1 PROCESS FOR PREPARING CHEMICAL LIQUID OF SILYLATING AGENT AND SURFACE TREATMENT METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2016-09-29 US disclosed
US-20150044858-A1 FILM-FORMING MATERIAL TOKYO OHKA KOGYO CO., LTD. (JP) 2015-02-12 US disclosed
US-8263430-B2 Capping layer formation onto a dual damescene interconnect NXP B.V. (NL) 2012-09-11 US disclosed
US-20080242110-A1 Capping Layer Formation Onto a Dual Damescene Interconnect NXP B.V. (NL) 2008-10-02 US disclosed