SCHEMBL46072

SCHEMBL46072

CCCCS(=O)(=O)ON=C(C#N)c1cccc(C(C#N)=NOS(=O)(=O)CCCC)c1

nearest known ligand 0.36

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 1/20 0.35
ALDH1A1 P00352 2/20 0.33
LMNA P02545 1/20 0.33
MAPK1 P28482 1/20 0.33
ALPL P05186 1/20 0.33
ALPI P09923 1/20 0.33
KAT6A Q92794 2/20 0.33
SMPD1 P17405 3/20 0.33
THRB P10828 1/20 0.32
KMT2A Q03164 1/20 0.31
PLA2G4B P0C869 1/20 0.31
PLA2G7 Q13093 1/20 0.31
CNR1 P21554 1/20 0.31
CNR2 P34972 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3378884 1.00 SMN1; SMN2 (0.35) SMN1; SMN2ALDH1A1LMNAMAPK1ALPL
SCHEMBL12923559 1.00 SMN1; SMN2 (0.35) SMN1; SMN2ALDH1A1LMNAMAPK1ALPL
SCHEMBL18720502 1.00 SMN1; SMN2 (0.35) SMN1; SMN2ALDH1A1LMNAMAPK1ALPL
SCHEMBL15500769 0.96 SMN1; SMN2 (0.33) SMN1; SMN2ALDH1A1LMNAMAPK1ALPL
SCHEMBL14375149 0.95 SMN1; SMN2 (0.33) SMN1; SMN2ALDH1A1LMNAMAPK1ALPL
SCHEMBL15219008 0.94 PPARG (0.34) SMN1; SMN2ALDH1A1LMNAMAPK1ALPL
SCHEMBL12310005 0.94 SMN1; SMN2 (0.32) SMN1; SMN2ALDH1A1LMNAMAPK1ALPL
SCHEMBL12616886 0.93 SMN1; SMN2 (0.32) SMN1; SMN2ALDH1A1LMNAMAPK1ALPL
SCHEMBL13758210 0.92 SMN1; SMN2 (0.31) SMN1; SMN2ALPLALPI
SCHEMBL14927316 0.91 KAT6A (0.33) SMN1; SMN2LMNAALPLALPIKAT6A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 509 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11803122-B2 Chemical amplification-type photosensitive composition, photosensitive dry film, production method of patterned resist layer, production method of plated molded article, compound, and production method of compound TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-31 US disclosed
US-11754926-B2 Method of forming resist pattern, resist composition and method of producing the same TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-12 US disclosed
WO-2023162551-A1 METHOD FOR PRODUCING PLATED SHAPED ARTICLE 東京応化工業株式会社 2023-08-31 WO disclosed
WO-2023162552-A1 CHEMICALLY AMPLIFIED POSITIVE PHOTOSENSITIVE COMPOSITION, PRODUCTION METHOD FOR SUBSTRATE WITH TEMPLATE, AND PRODUCTION METHOD FOR PLATED ARTICLE 東京応化工業株式会社 2023-08-31 WO disclosed
US-20230273521-A1 CHEMICALLY AMPLIFIED PHOTOSENTIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD OF SUBSTRATE HAVING TEMPLATE FOR PLATING, AND PRODUCTION METHOD OF PLATED ARTICLE TOKYO OHKA KOGYO CO., LTD. (JP) 2023-08-31 US disclosed
US-20230273521-A1 CHEMICALLY AMPLIFIED PHOTOSENTIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD OF SUBSTRATE HAVING TEMPLATE FOR PLATING, AND PRODUCTION METHOD OF PLATED ARTICLE TOKYO OHKA KOGYO CO., LTD. (JP) 2023-08-31 US disclosed
US-20230229084-A1 CHEMICALLY AMPLIFIED PHOTOSENSITIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD OF SUBSTRATE HAVING TEMPLATE FOR PLATING, AND PRODUCTION METHOD OF PLATED ARTICLE TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-20 US disclosed
EP-3702387-B1 PHOTOSENSITIVE RESIN COMPOSITION, AND METHOD FOR ETCHING GLASS SUBSTRATE TOKYO OHKA KOGYO CO LTD (JP) 2023-05-10 EP disclosed
EP-2980058-B1 COMPOSITION CONTAINING VINYL-GROUP-CONTAINING COMPOUND TOKYO OHKA KOGYO CO LTD (JP) 2023-05-03 EP disclosed
US-20230127914-A1 RESIST PATTERN FORMATION METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2023-04-27 US disclosed
US-20080193871-A1 Positive Resist Composition For Immersion Exposure and Method of Forming Resist Pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2008-08-14 US disclosed
EP-1947510-A1 POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2008-07-23 EP disclosed
US-20080145784-A1 Positive Resist Composition, Method For Resist Pattern Formation and Compound TOKYO OHKA KOGYO CO., LTD. (JP) 2008-06-19 US disclosed
US-20080131819-A1 Process For Producing Resist Pattern and Conductor Pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2008-06-05 US disclosed
US-20080090171-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2008-04-17 US disclosed
US-20080032242-A1 Method of Forming Plated Product Using Negative Photoresist Composition and Photosensitive Composition Used Therein TOKYO OHKA KOGYO CO., LTD. (JP) 2008-02-07 US disclosed
US-20080026321-A1 Positive-working photoresist composition for thick film formation TOKYO OHKA KOGYO CO., LTD. (JP) 2008-01-31 US disclosed
US-20080026321-A1 Positive-working photoresist composition for thick film formation TOKYO OHKA KOGYO CO., LTD. (JP) 2008-01-31 US disclosed
US-20070275320-A1 Chemically Amplified Photorestist Composition, Laminated Product, and Connection Element HITACHI CONSTRUCTION MACHINERY CO., LTD. (JP) 2007-11-29 US disclosed
US-7169532-B2 Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal TOKYO OHKA KOGYO CO., LTD. (JP) 2007-01-30 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080145784-A1 Positive Resist Composition, Method For Resist Pattern Formation and Compound POLR1A, POLR2A, POLR2B SMN1; SMN2 2834/4885ALDH1A1 1525/4885LMNA 861/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.