SCHEMBL461885

SCHEMBL461885

O=C1c2cccc3cccc(c23)C(=O)N1OS(=O)(=O)c1ccccc1C(F)(F)F

nearest known ligand 0.61

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 10/20 0.61
KMT2A Q03164 10/20 0.61
ALDH1A1 P00352 9/20 0.61
MAPT P10636 9/20 0.61
HPGD P15428 7/20 0.61
MEN1 O00255 7/20 0.61
HTT P42858 3/20 0.61
LMNA P02545 2/20 0.54
THRB P10828 1/20 0.54
F2 P00734 4/20 0.45
SMN1; SMN2 Q16637 1/20 0.45
XBP1 P17861 2/20 0.43
VDR P11473 3/20 0.42
POLB P06746 1/20 0.41
L3MBTL1 Q9Y468 1/20 0.41
TDP1 Q9NUW8 1/20 0.40
HTR1A P08908 1/20 0.40
DRD2 P14416 1/20 0.40
HTR2A P28223 1/20 0.40
HTR7 P34969 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL450075 0.89 KDM4E (0.55) KDM4EKMT2AALDH1A1MAPTHPGD
SCHEMBL29369802 0.89 KDM4E (0.55) KDM4EKMT2AALDH1A1MAPTHPGD
SCHEMBL28770528 0.83 KDM4E (0.66) KDM4EKMT2AALDH1A1MAPTHPGD
SCHEMBL548395 0.81 KDM4E (0.68) KDM4EKMT2AALDH1A1MAPTHPGD
SCHEMBL461884 0.81 KMT2A (0.40) KDM4EKMT2AALDH1A1MAPTHPGD
SCHEMBL28618961 0.80 KDM4E (0.66) KDM4EKMT2AALDH1A1MAPTHPGD
SCHEMBL27090597 0.78 KDM4E (0.70) KDM4EKMT2AALDH1A1MAPTHPGD
SCHEMBL547931 0.78 KDM4E (0.71) KDM4EKMT2AALDH1A1MAPTHPGD
SCHEMBL3827591 0.78 KMT2A (0.47) KDM4EKMT2AALDH1A1MAPTHPGD
SCHEMBL382760 0.77 KMT2A (0.47) KDM4EKMT2AALDH1A1MAPTHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 463 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-108267933-B Radiation-sensitive composition and patterning and metallization process 罗门哈斯电子材料有限责任公司 2021-12-03 CN claimed
US-10962880-B2 Radiation-sensitive compositions and patterning and metallization processes ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2021-03-30 US claimed
US-20200201175-A1 RADIATION-SENSITIVE COMPOSITIONS AND PATTERNING AND METALLIZATION PROCESSES U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2020-06-25 US claimed
US-20180188648-A1 RADIATION-SENSITIVE COMPOSITIONS AND PATTERNING AND METALLIZATION PROCESSES U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2018-07-05 US claimed
EP-3343293-A1 RADIATION-SENSITIVE COMPOSITIONS AND PATTERNING AND METALLIZATION PROCESSES Rohm and Haas Electronic Materials LLC (US) 2018-07-04 EP claimed
US-5994022-A BECOMES SOLUBLE IN ALKALI DEVELOPING SOLUTION BY ACTION OF AN ACID JSR CORPORATION (JP) 1999-11-30 US claimed
EP-4375750-A1 FILM-FORMING MATERIAL FOR SEMICONDUCTOR, MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, PROCESS MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, UNDERLAYER FILM-FORMING MATERIAL, UNDERLAYER FILM, AND SEMICONDUCTOR DEVICE ADEKA CORPORATION (JP) 2024-05-29 EP disclosed
EP-3010943-B1 CURABLE COMPOSITION, FILM, AND METHOD OF PRODUCING FILM CANON KK (JP) 2024-04-03 EP disclosed
US-11940730-B2 Photoresist compositions and pattern formation methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2024-03-26 US disclosed
CN-117616337-A Film forming material for semiconductor, member forming material for semiconductor, process member forming material for semiconductor, underlayer film forming material, underlayer film, and semiconductor device 株式会社艾迪科 2024-02-27 CN disclosed
US-11880135-B2 Photoresist compositions and pattern formation methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2024-01-23 US disclosed
US-20230420401-A1 METALLIZATION METHOD U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-12-28 US disclosed
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-12-26 US disclosed
EP-0898201-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-02-24 EP disclosed
EP-0843220-A1 Radiation sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1998-05-20 EP disclosed
US-5679495-A TERPOLYMER PHOTORESIST CONTAINING VINYLPHENOL DERIVATIVE, TERT-BUTYL (METH)ACRYLATE, AND A UNIT TO REDUCE ALKALINE SOLUBILITY; DRY ETCH RESISTANCE JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1997-10-21 US disclosed
EP-0793144-A2 Radiation sensitive composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1997-09-03 EP disclosed
EP-0660187-B1 Radiation-sensitive resin composition JAPAN SYNTHETIC RUBBER CO LTD (JP) 1997-03-05 EP disclosed
US-5556734-A RESISTS JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1996-09-17 US disclosed
EP-0660187-A1 Radiation-sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1995-06-28 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin SLC39A11, CROCC, TERB1 KDM4E 3079/4885KMT2A 2526/4885ALDH1A1 3830/4885
US-11880135-B2 Photoresist compositions and pattern formation methods PARG, SUN2, ALAD KDM4E 1489/4885KMT2A 1305/4885ALDH1A1 2212/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.