SCHEMBL461884

SCHEMBL461884

O=C1c2ccc3ccccc3c2C(=O)N1OS(=O)(=O)c1ccccc1C(F)(F)F

nearest known ligand 0.40

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 9/20 0.40
MEN1 O00255 7/20 0.40
ALDH1A1 P00352 9/20 0.39
MAPT P10636 8/20 0.39
KDM4E B2RXH2 8/20 0.39
HPGD P15428 6/20 0.39
HTT P42858 3/20 0.39
F2 P00734 3/20 0.39
SMN1; SMN2 Q16637 2/20 0.39
LMNA P02545 2/20 0.39
HSD11B1 P28845 3/20 0.38
XBP1 P17861 1/20 0.38
DNMT1 P26358 1/20 0.37
RAB9A P51151 1/20 0.36
POLB P06746 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
VDR P11473 2/20 0.36
THRB P10828 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL548394 0.85 ALDH1A1 (0.47) KMT2AMEN1ALDH1A1MAPTKDM4E
SCHEMBL29369802 0.82 KDM4E (0.55) KMT2AMEN1ALDH1A1MAPTKDM4E
SCHEMBL450075 0.82 KDM4E (0.55) KMT2AMEN1ALDH1A1MAPTKDM4E
SCHEMBL547930 0.81 KMT2A (0.50) KMT2AMEN1ALDH1A1MAPTKDM4E
SCHEMBL461885 0.81 KDM4E (0.61) KMT2AMEN1ALDH1A1MAPTKDM4E
SCHEMBL184225 0.80 DNMT1 (0.42) KMT2AMEN1ALDH1A1MAPTKDM4E
SCHEMBL72297 0.79 ALDH1A1 (0.63) KMT2AMEN1ALDH1A1MAPTKDM4E
SCHEMBL60581 0.78 KMT2A (0.45) KMT2AMEN1ALDH1A1MAPTKDM4E
SCHEMBL462228 0.78 KMT2A (0.66) KMT2AMEN1ALDH1A1MAPTKDM4E
SCHEMBL3827591 0.76 KMT2A (0.47) KMT2AMEN1ALDH1A1MAPTKDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 397 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-5994022-A BECOMES SOLUBLE IN ALKALI DEVELOPING SOLUTION BY ACTION OF AN ACID JSR CORPORATION (JP) 1999-11-30 US claimed
EP-4375750-A1 FILM-FORMING MATERIAL FOR SEMICONDUCTOR, MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, PROCESS MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, UNDERLAYER FILM-FORMING MATERIAL, UNDERLAYER FILM, AND SEMICONDUCTOR DEVICE ADEKA CORPORATION (JP) 2024-05-29 EP disclosed
EP-3010943-B1 CURABLE COMPOSITION, FILM, AND METHOD OF PRODUCING FILM CANON KK (JP) 2024-04-03 EP disclosed
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-12-26 US disclosed
US-11681227-B2 Enhanced EUV photoresist materials, formulations and processes IRRESISTIBLE MATERIALS LTD (GB) 2023-06-20 US disclosed
US-20230096312-A1 RESIST COMPOSITION AND METHOD FOR USING RESIST COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-03-30 US disclosed
US-11592605-B2 Color developing structure having concave-convex layer, method for producing such structure, and display TOPPAN PRINTING CO., LTD. (JP) 2023-02-28 US disclosed
US-11572430-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-02-07 US disclosed
WO-2023008355-A1 RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAID COMPOSITION 三菱瓦斯化学株式会社 2023-02-02 WO disclosed
WO-2023008354-A1 RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME 三菱瓦斯化学株式会社 2023-02-02 WO disclosed
EP-0959389-A1 Diazodisulfone compound and radiation-sensitive resin composition JSR Corporation (JP) 1999-11-24 EP disclosed
US-5962180-A COMPRISING (A) A COPOLYMER COMPRISING RECURRING UNITS OF A P-HYDROXYSTYRENE UNIT AND A STYRENE UNIT HAVING AN ACETAL GROUP OR A KETAL GROUP AT THE P-POSITION, (B) A COPOLYMER COMPRISING RECURRING UNITS OF A T-BUTYL (METH)ACRYLATE UNIT JSR CORPORATION (JP) 1999-10-05 US disclosed
EP-0901043-A1 Radiation-sensitive resin composition JSR Corporation (JP) 1999-03-10 EP disclosed
EP-0898201-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-02-24 EP disclosed
EP-0843220-A1 Radiation sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1998-05-20 EP disclosed
US-5679495-A TERPOLYMER PHOTORESIST CONTAINING VINYLPHENOL DERIVATIVE, TERT-BUTYL (METH)ACRYLATE, AND A UNIT TO REDUCE ALKALINE SOLUBILITY; DRY ETCH RESISTANCE JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1997-10-21 US disclosed
EP-0793144-A2 Radiation sensitive composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1997-09-03 EP disclosed
EP-0660187-B1 Radiation-sensitive resin composition JAPAN SYNTHETIC RUBBER CO LTD (JP) 1997-03-05 EP disclosed
US-5556734-A RESISTS JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1996-09-17 US disclosed
EP-0660187-A1 Radiation-sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1995-06-28 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin SLC39A11, CROCC, TERB1 KMT2A 2526/4885MEN1 1260/4885ALDH1A1 3830/4885
US-11572430-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method C9, C5, C1R KMT2A 633/4885MEN1 1512/4885ALDH1A1 1540/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.