SCHEMBL472305

SCHEMBL472305

O=C(O)CC(O)(C(=O)O)N1CCCCC1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.39
TSHR P16473 2/20 0.38
CYP2D6 P10635 1/20 0.38
CYP2C19 P33261 1/20 0.38
HIF1A Q16665 1/20 0.38
CYP1A2 P05177 1/20 0.35
MAPK1 P28482 1/20 0.35
SMN1; SMN2 Q16637 1/20 0.35
HMGCR P04035 1/20 0.34
CHRM1 P11229 1/20 0.34
TBXA2R P21731 1/20 0.34
ADRA1A P35348 1/20 0.34
ACLY P53396 3/20 0.33
HTT P42858 1/20 0.32
CPT2 P23786 1/20 0.32
SLC13A5 Q86YT5 1/20 0.32
KDM4E B2RXH2 1/20 0.32
LMNA P02545 1/20 0.32
MAPT P10636 1/20 0.32
ALOX15 P16050 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4192258 0.75 HMGCR (0.44) ALDH1A1TSHRCYP2D6CYP2C19HIF1A
SCHEMBL6371446 0.69 CYP2C19 (0.41) ALDH1A1TSHRCYP2D6CYP2C19HIF1A
Citric Acid SCHEMBL7204241 0.68 ALDH1A1 (0.58) ALDH1A1TSHRCYP2D6CYP2C19HIF1A
Citric Acid SCHEMBL7204691 0.68 ALDH1A1 (0.58) ALDH1A1TSHRCYP2D6CYP2C19HIF1A
Citric Acid SCHEMBL27835074 0.67 ALDH1A1 (0.83) ALDH1A1TSHRCYP2D6CYP2C19HIF1A
SCHEMBL3413572 0.67 ALDH1A1 (0.33) ALDH1A1TSHR
SCHEMBL4447369 0.67 ALDH1A1 (0.38) ALDH1A1CYP1A2MAPK1SMN1; SMN2HTT
SCHEMBL472332 0.67 ALDH1A1 (0.42) ALDH1A1TSHRCYP2D6CYP2C19HIF1A
SCHEMBL8827280 0.66 ALDH1A1 (0.45) ALDH1A1TSHRCYP2D6CYP2C19HIF1A
Citric Acid SCHEMBL6731419 0.66 ALDH1A1 (0.79) ALDH1A1TSHRCYP2D6CYP2C19HIF1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 102 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2202577-B1 Chemically amplified positive resist composition and resist patterning process SHINETSU CHEMICAL CO (JP) 2014-08-27 EP claimed
EP-2492746-B1 Chemically amplified negative resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2019-11-20 EP disclosed
EP-2492747-B1 Chemically amplified negative resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2018-11-07 EP disclosed
EP-2270596-B1 Positive resist compostion and pattern forming process SHINETSU CHEMICAL CO (JP) 2018-07-25 EP disclosed
US-RE46765-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
US-RE46736-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
EP-2360525-B1 Chemically amplified positive resist composition and pattern forming process SHINETSU CHEMICAL CO (JP) 2017-08-23 EP disclosed
EP-2360527-B1 Patterning process using EB or EUV lithography SHINETSU CHEMICAL CO (JP) 2017-08-23 EP disclosed
EP-2360526-B1 Chemically amplified negative resist composition for E beam or EUV lithography and patterning process SHINETSU CHEMICAL CO (JP) 2017-08-16 EP disclosed
EP-2256552-B1 Negative resist composition and patterning process using the same SHINETSU CHEMICAL CO (JP) 2017-07-12 EP disclosed
EP-2256551-A1 Chemically amplified resist compositon and pattern forming process Shin-Etsu Chemical Co., Ltd. (JP) 2010-12-01 EP disclosed
EP-2256552-A1 Negative resist composition and patterning process using the same Shin-Etsu Chemical Co., Ltd. (JP) 2010-12-01 EP disclosed
EP-2253996-A1 Negative resist composition, patterning process, and testing process and preparation process of negative resist composition Shin-Etsu Chemical Co., Ltd. (JP) 2010-11-24 EP disclosed
US-20100291484-A1 Negative resist composition, patterning process, and testing process and preparation process of negative resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-11-18 US disclosed
EP-2244124-A2 Patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2010-10-27 EP disclosed
EP-2244125-A2 Resist composition Shin-Etsu Chemical Co., Ltd. (JP) 2010-10-27 EP disclosed
EP-2244126-A2 Patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2010-10-27 EP disclosed
EP-2202577-A1 Chemically amplified positive resist composition and resist patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2010-06-30 EP disclosed
EP-2146245-A2 Resist composition and patterning process Shinetsu Chemical Co., Ltd. (JP) 2010-01-20 EP disclosed
US-20100009299-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-01-14 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100009299-A1 Resist composition and patterning process ARF4, FGFR2, ARF5 ALDH1A1 2706/4885TSHR 2319/4885CYP2D6 3310/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.