⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL824309 | 0.86 | — | — | |
| SCHEMBL13008688 | 0.86 | HMGCR (0.32) | — | |
| SCHEMBL13759960 | 0.85 | — | — | |
| SCHEMBL14313768 | 0.85 | — | — | |
| SCHEMBL10169528 | 0.83 | — | — | |
| SCHEMBL15278109 | 0.82 | L3MBTL1 (0.33) | — | |
| SCHEMBL13483416 | 0.82 | — | — | |
| SCHEMBL13222986 | 0.82 | — | — | |
| SCHEMBL47501 | 0.81 | HSD11B1 (0.33) | — | |
| SCHEMBL15278108 | 0.81 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 427 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11780946-B2 | Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-10-10 | — | — | US | disclosed |
| US-11747726-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-05 | — | — | US | disclosed |
| US-11709425-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-25 | — | — | US | disclosed |
| US-11703756-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-18 | — | — | US | disclosed |
| US-11703757-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-18 | — | — | US | disclosed |
| US-20230205084-A1 | RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-06-29 | — | — | US | disclosed |
| US-11667605-B2 | Resist composition, method of forming resist pattern, compound, acid generator, and method of producing compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-06-06 | — | — | US | disclosed |
| US-11650497-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-05-16 | — | — | US | disclosed |
| US-20180149973-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2018-05-31 | — | — | US | disclosed |
| US-20180081271-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2018-03-22 | — | — | US | disclosed |
| US-20080311512-A1 | PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR PATTERN FORMING | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080311515-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080311522-A1 | Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080292988-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD (JP) | 2008-11-27 | — | — | US | disclosed |
| US-20080268376-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-10-30 | — | — | US | disclosed |
| US-20080193871-A1 | Positive Resist Composition For Immersion Exposure and Method of Forming Resist Pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-08-14 | — | — | US | disclosed |
| US-20080166655-A1 | Polymer Compound, Photoresist Composition Including the Polymer Compound, and Resist Pattern Formation Method | OGATA TOSHIYUKI | 2008-07-10 | — | — | US | disclosed |
| US-20080096126-A1 | Polymer Compound, Positive Resist Composition and Process for Forming Resist Pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-04-24 | — | — | US | disclosed |
| US-20080090171-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-04-17 | — | — | US | disclosed |
| US-20070231708-A1 | Polymer Compound, Acid Generator, Positive Resist Composition, and Method for Formation of Resist Patterns | TOKYO OHKA KOGYO CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |