SCHEMBL4742800

SCHEMBL4742800

CC1=C(C)C(C)(C)C([In])=C1C

nearest known ligand 0.35

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
CTSD P07339 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2230540 0.75 CTSD (0.43) CTSD
SCHEMBL28961651 0.67 CTSD (0.38) CTSD
SCHEMBL514111 0.67 CTSD (0.33) CTSD
Hydrochloric Acid SCHEMBL8069111 0.67 CTSD (0.33) CTSD
SCHEMBL25223152 0.62 CTSD (0.35) CTSD
SCHEMBL9860117 0.62 CTSD (0.35) CTSD
SCHEMBL8500259 0.62 CTSD (0.35) CTSD
SCHEMBL9860925 0.62 CTSD (0.35) CTSD
SCHEMBL4652458 0.62 CTSD (0.35) CTSD
SCHEMBL2851519 0.62 CTSD (0.35) CTSD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2008091396-A2 THERMOELECTRIC NANOWIRE COMPOSITES ELORET CORPORATION (US) 2008-07-31 WO claimed
US-20080178921-A1 THERMOELECTRIC NANOWIRE COMPOSITES ELORET CORPORATION 2008-07-31 US claimed
US-20250283217-A1 VAPOR DEPOSITION SOURCE MATERIAL USED IN PRODUCTION OF FILM CONTAINING INDIUM AND ONE OR MORE OF THE OTHER METALS, AND THE METHOD OF PRODUCING FILM CONTAINING INDIUM AND ONE OR MORE OF THE OTHER METALS KOJUNDO CHEMICAL LABORATORY CO., LTD. (JP) 2025-09-11 US disclosed
US-12410514-B2 Vapor deposition source material used in production of film containing indium and one or more of the other metals, and the method of producing film containing indium and one or more of the other metals KOJUNDO CHEMICAL LABORATORY CO., LTD. (JP) 2025-09-09 US disclosed
US-20250157808-A1 METHODS AND APPARATUS UTILIZING INDIUM-BASED PRECURSORS FOR INTEGRATED CIRCUIT MANUFACTURING INTEL CORPORATION 2025-05-15 US disclosed
EP-4553577-A2 METHODS AND APPARATUS UTILIZING INDIUM-BASED PRECURSORS FOR INTEGRATED CIRCUIT MANUFACTURING INTEL Corporation (US) 2025-05-14 EP disclosed
US-20240003004-A1 VAPOR DEPOSITION SOURCE MATERIAL USED IN PRODUCTION OF FILM CONTAINING INDIUM AND ONE OR MORE OF THE OTHER METALS, AND THE METHOD OF PRODUCING FILM CONTAINING INDIUM AND ONE OR MORE OF THE OTHER METALS KOJUNDO CHEMICAL LABORATORY CO., LTD. (JP) 2024-01-04 US disclosed
US-8482104-B2 Method for growth of indium-containing nitride films SORAA, INC. (US) 2013-07-09 US disclosed
US-20120199952-A1 Method for Growth of Indium-Containing Nitride Films SORAA, INC. (US) 2012-08-09 US disclosed
WO-2008091396-A2 THERMOELECTRIC NANOWIRE COMPOSITES ELORET CORPORATION (US) 2008-07-31 WO disclosed
US-20080178921-A1 THERMOELECTRIC NANOWIRE COMPOSITES ELORET CORPORATION 2008-07-31 US disclosed