Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP3A4 | P08684 | 3/20 | 0.32 |
| ▸ | HMGCR | P04035 | 3/20 | 0.32 |
| ▸ | USP2 | O75604 | 2/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.32 |
| ▸ | TSHR | P16473 | 2/20 | 0.32 |
| ▸ | SLCO1B1 | Q9Y6L6 | 2/20 | 0.32 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.32 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.32 |
| ▸ | NR1I2 | O75469 | 1/20 | 0.32 |
| ▸ | ABCB11 | O95342 | 1/20 | 0.32 |
| ▸ | NR3C1 | P04150 | 1/20 | 0.32 |
| ▸ | PGR | P06401 | 1/20 | 0.32 |
| ▸ | ABCB1 | P08183 | 1/20 | 0.32 |
| ▸ | ADORA3 | P0DMS8 | 1/20 | 0.32 |
| ▸ | CYP2C8 | P10632 | 1/20 | 0.32 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.32 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.32 |
| ▸ | GABRA1 | P14867 | 1/20 | 0.32 |
| ▸ | ADRA2B | P18089 | 1/20 | 0.32 |
| ▸ | ADRA2C | P18825 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL47511 | 1.00 | CYP3A4 (0.32) | CYP3A4HMGCRUSP2ALDH1A1TSHR | |
| SCHEMBL47514 | 0.90 | — | — | |
| SCHEMBL47571 | 0.90 | — | — | |
| SCHEMBL16327039 | 0.86 | HMGCR (0.35) | CYP3A4HMGCRUSP2ALDH1A1TSHR | |
| SCHEMBL47531 | 0.86 | HMGCR (0.35) | CYP3A4HMGCRUSP2ALDH1A1TSHR | |
| SCHEMBL19457735 | 0.86 | HMGCR (0.35) | CYP3A4HMGCRUSP2ALDH1A1TSHR | |
| SCHEMBL47530 | 0.86 | HMGCR (0.35) | CYP3A4HMGCRUSP2ALDH1A1TSHR | |
| SCHEMBL13821842 | 0.84 | CHRM2 (0.32) | CHRM1 | |
| SCHEMBL13821840 | 0.84 | CHRM2 (0.32) | CHRM1 | |
| SCHEMBL12311262 | 0.82 | PRKCA (0.31) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 416 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10025186-B2 | Active-light-sensitive or radiation-sensitive resin composition, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2018-07-17 | — | — | US | disclosed |
| US-10018913-B2 | Active-light-sensitive or radiation-sensitive resin composition, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2018-07-10 | — | — | US | disclosed |
| US-9996003-B2 | Active-light-sensitive or radiation-sensitive resin composition, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2018-06-12 | — | — | US | disclosed |
| US-20180120706-A1 | PATTERN FORMING METHOD, LAMINATE, AND RESIST COMPOSITION FOR ORGANIC SOLVENT DEVELOPMENT | FUJIFILM CORPORATION (JP) | 2018-05-03 | — | — | US | disclosed |
| US-9952509-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2018-04-24 | — | — | US | disclosed |
| US-9885956-B2 | Pattern forming method, and, electronic device producing method and electronic device, each using the same | FUJIFILM CORPORATION (JP) | 2018-02-06 | — | — | US | disclosed |
| US-9841679-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-12-12 | — | — | US | disclosed |
| US-20170322490-A1 | PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION FOR ORGANIC SOLVENT DEVELOPMENT | FUJIFILM CORPORATION (JP) | 2017-11-09 | — | — | US | disclosed |
| US-9810981-B2 | Pattern formation method, etching method, electronic device manufacturing method, and electronic device | FUJIFILM CORPORATION (JP) | 2017-11-07 | — | — | US | disclosed |
| US-9791777-B2 | Active light sensitive or radiation sensitive resin composition, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-10-17 | — | — | US | disclosed |
| US-20090035698-A1 | POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-05 | — | — | US | disclosed |
| US-20090023097-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-01-22 | — | — | US | disclosed |
| US-20090023095-A1 | NOVEL COMPOUND, MANUFACTURING METHOD THEREOF, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING A RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-01-22 | — | — | US | disclosed |
| US-20080311522-A1 | Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080292988-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD (JP) | 2008-11-27 | — | — | US | disclosed |
| US-20080268376-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-10-30 | — | — | US | disclosed |
| US-20080248422-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080193871-A1 | Positive Resist Composition For Immersion Exposure and Method of Forming Resist Pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-08-14 | — | — | US | disclosed |
| US-20080090171-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-04-17 | — | — | US | disclosed |
| US-20080008962-A1 | Polymerizable ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-10 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080311522-A1 | Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation | GNG2, ACAD9, SCO2 | CYP3A4 2148/4885HMGCR 3786/4885USP2 4318/4885 |
| US-20080248422-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR | RER1, ACAD9, RRS1 | CYP3A4 1596/4885HMGCR 1468/4885USP2 3740/4885 |
| US-20090023095-A1 | NOVEL COMPOUND, MANUFACTURING METHOD THEREOF, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING A RESIST PATTERN | C1R, CYP1B1, C1S | CYP3A4 523/4885HMGCR 1420/4885USP2 4504/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.